P-type monocrystalline perc battery capable of improving letid phenomenon and manufacturing method thereof

A production method and single crystal technology, applied in the direction of sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problems that do not conform to the development trend of cost reduction and efficiency improvement in the photovoltaic industry, the decline in the efficiency of cells and modules, and excess hydrogen atoms in cells, etc. Problems, to achieve good field passivation effect, reduce the amount of use, reduce the effect of excess hydrogen atom content

Active Publication Date: 2021-09-21
JETION SOLAR HLDG
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  • Application Information

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Problems solved by technology

The more excess hydrogen, the worse the attenuation, resulting in lower cell and module efficiencies
In order to improve this problem, there are currently two research directions: one is to use low-defect high-quality silicon wafers, but this will lead to a substantial increase in manufacturing costs, which is not in line with the development trend of cost reduction and efficiency improvement in the photovoltaic industry; However, the current battery manufacturing process cannot reduce the hydrogen content, because when depositing SiNx films on the front and AlOx / SiNx stacked films on the back by PECVD, a large amount of hydrogen sources will be introduced, which will eventually lead to the battery Excess hydrogen atoms appear in the film, resulting in serious LeTID phenomenon

Method used

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  • P-type monocrystalline perc battery capable of improving letid phenomenon and manufacturing method thereof
  • P-type monocrystalline perc battery capable of improving letid phenomenon and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Step S1, surface texture, also known as alkali texturing, is to use alkali solution to corrode the silicon wafer substrate 4, and form a pyramid-shaped surface morphology on the surface of the silicon wafer substrate 4, wherein, the reaction alkali solution: 1.2wt% NaOH, reaction time: 400s, temperature: 80°C, reflectance after treatment: 11%;

[0034] Step S2, high-temperature phosphorus diffusion, nitrogen gas is passed through a constant temperature liquid source bottle, and the diffusion source phosphorus oxychloride is brought into a high-temperature diffusion furnace, and a sufficient amount of oxygen is introduced at the same time, after the reaction, phosphorus atoms diffuse into the interior of the P-type silicon wafer , forming an N-type impurity distribution, and obtaining a PN junction, wherein, nitrogen flow rate: 700sccm, oxygen flow rate: 800sccm, reaction time: 88min, temperature: 800°C, diffusion resistance: 120 ohms; and then laser doping method is form...

Embodiment 2

[0044] Step S1, surface texture, also known as alkali texturing, that is, using an alkali solution to corrode the silicon wafer substrate, forming a pyramid-shaped surface morphology on the surface of the silicon wafer substrate, wherein the reaction alkali solution: 1.2wt% NaOH, Reaction time: 400s, temperature: 80°C, reflectivity after treatment: 11%;

[0045] Step S2, high-temperature phosphorus diffusion, wherein, nitrogen flow rate: 700sccm, oxygen flow rate: 800sccm, reaction time: 88min, temperature: 800°C, diffusion resistance: 120 ohms; and then laser doping method to form a heavily doped region in the front electrode region, Square resistance: 95 ohms;

[0046] Step S3, peripheral etching and back polishing, using 49% HF acid solution to etch the back and edge of the silicon wafer diffused in step 2, and then using 45% KOH and polishing additives to polish the back of the silicon wafer Processing, weight reduction: 0.25g, back reflectivity: 42%;

[0047] Step S4, s...

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Abstract

The present invention provides a method for manufacturing a P-type single crystal PERC battery that can improve the LeTID phenomenon, comprising the following steps: step S1, surface texture; step S2, high-temperature phosphorus diffusion; step S3, peripheral etching and backside polishing; step S4, preparation of front and back silicon dioxide layers; step S5, preparation of back aluminum oxide layer; step S6, preparation of back silicon carbonitride layer; step S7, preparation of back silicon oxynitride stack; step S8, front side silicon oxynitride layer Preparation; step S9, laser grooving on the back; step S10, preparation of front and back electrodes. The invention reduces the sources of hydrogen sources and reduces redundant hydrogen atoms in solar cells by changing the structure of the battery film layer, making raw materials and corresponding process optimization methods, so as to achieve the technical effect of improving the LeTID phenomenon of solar cells.

Description

technical field [0001] The invention relates to a P-type single crystal PERC battery and a manufacturing method thereof, in particular to a P-type single crystal PERC battery capable of improving the LeTID phenomenon and a manufacturing method thereof, belonging to the technical field of solar cell production and manufacturing. Background technique [0002] In recent years, the mainstream product in the photovoltaic industry is boron-doped P-type monocrystalline PERC (Passivated Emmiter and Rear Cell, also known as passivated emitter and rear cell) solar cells, but this mainstream product has different degrees of light-induced degradation (LID, Light Induced Degradation) and light and heat decay (LeTID, Light and elevatedTemperature Induced Degradation) phenomenon. Photoinduced attenuation and photothermal attenuation refer to the obvious efficiency attenuation phenomenon of PERC cells under certain high temperature and light conditions, which seriously affects the power gen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/054
CPCH01L31/02167H01L31/18H01L31/0543Y02E10/52Y02P70/50
Inventor 康海涛郭万武吴中亚
Owner JETION SOLAR HLDG
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