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Preparation method of metal molybdenum doped modified titanium dioxide visible-light-induced photocatalyst

A technology of titanium dioxide and visible light, which is applied in the preparation and application of nanomaterials, can solve the problems of difficulty in controlling the uniformity of particles, the limitation of semiconductor applications, and no absorption of visible light, etc., and achieve a wide range of raw material sources, simple and easy-to-operate equipment, and broad application prospects. Effect

Active Publication Date: 2020-04-21
JILIN NORMAL UNIV
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Problems solved by technology

But due to TiO 2 It is a wide-bandgap semiconductor with a bandgap of 3.2eV, which can only be excited by ultraviolet (UV) light and has almost no absorption of visible light.
In addition, the preparation of TiO 2 The general process of semiconductor materials is more complicated, and it is difficult to control the uniformity of the particles, which makes TiO 2 The application of semiconductors in the field of photocatalysis has been greatly limited

Method used

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  • Preparation method of metal molybdenum doped modified titanium dioxide visible-light-induced photocatalyst
  • Preparation method of metal molybdenum doped modified titanium dioxide visible-light-induced photocatalyst
  • Preparation method of metal molybdenum doped modified titanium dioxide visible-light-induced photocatalyst

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Embodiment Construction

[0016] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] A metal Mo-doped modified TiO 2 A preparation method for a visible light catalyst, the preparation method comprising the following steps:

[0018] (1), add 1.6g (polyethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) (abbreviation: F127, molecular weight: 13000) and 0.273g pentachloro Molybdenum (MoCl 5 ), stirred at 60° C. for 1 h, and the rotation speed was 500 rpm, so that it was fully dissolved to form a solution.

[0019] (2), add 2.3mL glacial acetic acid, 0.7mL concentrated hydrochloric acid and 3.5mL tetrabutyl titanate (TBT) to the solution obtained in step (1) and continue to stir for 30min at a speed of 500rpm to obtain a mixed solution; then mix the solution Move it into an electric blast drying oven, and dry it at 60°C for 24 hours to obtain metal Mo-doped TiO 2 gel.

[0020] (3), the metal Mo do...

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Abstract

The invention relates to a preparation method of a metal molybdenum doped modified titanium dioxide visible-light-induced photocatalyst (Mo-TiO2), and belongs to the technical field of preparations and applications of nano-materials. Metal Mo is doped into a TiO2 semiconductor, so that the surface oxygen defect can be artificially introduced. Mo doping and introduction of surface oxygen defects cause narrowing of the band gap of the TiO2 semiconductor, so that the light absorption range of Mo-TiO2 is expanded to a visible light region, and the utilization rate of the TiO2 semiconductor to visible light is further improved. In addition, the yield of NH3 in unit time is adopted to evaluate the photocatalytic nitrogen fixation performance of Mo-TiO2. The method is simple and environment-friendly in preparation process, and the visible light catalytic nitrogen fixation efficiency of the Mo-TiO2 is high, so that the Mo-TiO2 has potential application value in the field of visible light catalytic nitrogen fixation.

Description

technical field [0001] The invention belongs to the field of preparation and application of nanomaterials, and in particular relates to a metal Mo-doped modified TiO 2 Visible light catalyst (Mo-TiO 2 ) preparation method. Background technique [0002] In recent years, photocatalytic nitrogen fixation technology has become a research hotspot due to its advantages of cleanliness, high efficiency, and selectivity. Researchers are actively developing some catalysts for photocatalytic nitrogen fixation, among which titanium dioxide (TiO 2 ) semiconductors have become one of the most widely studied semiconductor materials because of their chemical stability and low toxicity. But due to TiO 2 It is a wide-bandgap semiconductor with a bandgap of 3.2eV, which can only be excited by ultraviolet (UV) light and has almost no absorption of visible light. In addition, the preparation of TiO 2 The general process of semiconductor materials is more complicated, and it is difficult to...

Claims

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Application Information

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IPC IPC(8): B01J23/28B01J35/02B01J35/08C01C1/04
CPCB01J23/28C01C1/0411B01J35/51B01J35/40B01J35/39Y02P20/52
Inventor 翟宏菊赵钊李晓慧关壬铨李佳昕宋沐遥李铭新
Owner JILIN NORMAL UNIV
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