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A flexible transparent conductive film based on graphene/silver nanowires/chitosan

A transparent conductive film, silver nanowire technology, applied in graphene, equipment for making conductive/semiconductive layers, nanocarbons, etc. Density, the effect of avoiding the existence of voids

Active Publication Date: 2021-03-23
东莞市新金佳祺电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem mainly solved by the present invention is: in order to improve the adhesion between the silver nanowires and the matrix resin during the preparation of the existing conductive film, an excessive amount of organic matter is introduced, resulting in a decrease in the transparency of the film. Flexible transparent conductive films based on graphene / silver nanowires / chitosan

Method used

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  • A flexible transparent conductive film based on graphene/silver nanowires/chitosan
  • A flexible transparent conductive film based on graphene/silver nanowires/chitosan
  • A flexible transparent conductive film based on graphene/silver nanowires/chitosan

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specific Embodiment approach

[0022]Next, the technical scheme in the embodiment of the present invention will be described in conjunction with the embodiment of the present invention, which is apparent from the embodiments of the present invention, and not all of the embodiments of the invention, not all of the embodiments of the invention. Based on the embodiments of the present invention, there are all other embodiments obtained without making creative labor without making creative labor premises.

[0023]Layer hydroxyl groups substituted with amino-substituted graphene:

[0024]The dimethylformamide solution of the oxidized graphene and mass fraction of 1 to 5% is 1: 10-1: 20, in the reactor, at a temperature of 75-80 ° C, at a temperature of 75-80 ° C. The stirring speed was 200-600 R / min, and the mixture was heated and stirred for 1-5 hours, filtered, cake, and dried the resulting filter to a temperature of 105-110 ° C to constant weight, pretreatment of oxide oxide After mixing pretreatment of graphene and te...

Embodiment 1

[0040]Layer hydroxyl groups substituted with amino-substituted graphene:

[0041]The dimethylformamide solution of the oxide and mass fraction of 1% is 1% by mass is mixed into the reactor in a mass ratio of 1:10, at which the temperature is 75 ° C, the stirring speed is 200R / min. After heating and stirring reaction for 1 h, filtered, cake, and dried the resulting filter to a temperature of 105 ° C to constant weight, pretreatment of oxide oxide; pretreatment of graphene and tetrahydrofuran, according to mass ratio 1 After mixing, after mixing, the ultrasonic frequency is 40 kHz, and the ultrasonic dispersion is 40 min. After the ultrasonic dispersion is completed, the pretreatment of the graphemene mass 1% hydride is added, at a temperature of 55 ° C, stirring the rotation speed of 400R / min. Under the conditions, the reaction was heated and stirred for 1 h, filtered, cake, and dried the resulting filter to the temperature of 105 ° C to a constant weight, and the hydroxyl group was...

Embodiment 2

[0057]Layer hydroxyl groups substituted with amino-substituted graphene:

[0058]The dimethylformamide solution of the oxide oxide and mass fraction of 3% is mixed into the reactor in a mass ratio of 1: 15, at a temperature of 78 ° C, stirring the rotation speed of 400R / min. After heating and stirring, the reaction was stirred, filtered, cake, and dried the resulting filter to a temperature of 108 ° C to constant weight, pretreatment of oxide oxide; pretreatment of graphene and tetrahydrofuran, according to mass ratio 1 After mixing, after the ultrasonic frequency is 60 kHz, the ultrasonic dispersion is 50 min. After the ultrasonic dispersion is completed, the pretreatment of the graphel oxide mass 3% hydrogenated aluminum hydride is added, at a temperature of 60 ° C, stirring the rotation speed of 450 r / min. Under the conditions, the reaction was heated and stirred for 2 h, filtered, cake, and dried the resulting filter to a constant weight at a temperature of 108 ° C, and a hydro...

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Abstract

The invention discloses a flexible transparent conductive film based on graphene / silver nanowire / chitosan, which belongs to the technical field of composite film materials. When the flexible transparent conductive film developed by the present invention is prepared, 18-25 parts of graphene-silver nanowire interlayer material, 20-25 parts of enzymatic chitosan, and 3-5 parts of calcium alginate are successively taken in parts by weight. , 2-3 parts of glycerin, 3-5 parts of terephthalaldehyde, mix and pour into the mixer, then add deionized water, the amount of deionized water is 5-8 times the quality of enzymatic chitosan, stir and mix evenly After that, spin coating to form a film, and then hot press at a temperature of 65-75°C and a pressure of 3-5MPa for 30-50min, cool down, and peel off the film to obtain a flexible transparent conductive film. The product obtained by the invention has good conductivity and maintains high transparency.

Description

Technical field[0001]The present invention discloses a flexible transparent conductive film based on graphene / silver nanowire / chitosan, belonging to the technical field of composite film materials.Background technique[0002]Transparent conductive film refers to a visible light transmittance greater than 80%, and the resistivity is less than 10.-3Film of Ω · m. Because of its high permeability and lower resistivity, it is widely used in the current demand, the most developed touch screen, solar cell and liquid crystal display areas, and the market prospects are broad.[0003]The most mature Korean ITO is currently used, is widely prepared on ceramics and glass. As the technology develops, ITO has also been gradually exposed to its short board; the ITO film is brittle, flexible, limiting its use on flexible electronic devices, disadvantaged. And indium resources are scarce, and the effects of its preparation use are increasingly significant.[0004]Nano-silver wires have good conductiv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/24H01B1/22H01B5/16H01B13/00C01B32/184C01B32/194B22F1/00B22F1/02
CPCH01B1/24H01B1/22H01B5/16H01B13/0026B22F1/054B22F1/07B22F1/14B22F1/16
Inventor 陈开兵
Owner 东莞市新金佳祺电子科技有限公司
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