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Perovskite light-emitting layer and manfuacturing method thereof, light-emitting device and display device

A perovskite and light-emitting layer technology, applied in the field of liquid crystal display, can solve the problems of low efficiency of tin-based perovskite light-emitting diodes

Pending Publication Date: 2020-04-21
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In theory, using tin-based perovskite materials can obtain photoelectric performance no less than that of lead-based light-emitting diodes, but in fact, the efficiency of tin-based perovskite light-emitting diodes is much lower than that of lead-based perovskite light-emitting diodes.

Method used

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  • Perovskite light-emitting layer and manfuacturing method thereof, light-emitting device and display device
  • Perovskite light-emitting layer and manfuacturing method thereof, light-emitting device and display device
  • Perovskite light-emitting layer and manfuacturing method thereof, light-emitting device and display device

Examples

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no. 1 example

[0037] figure 1 It is a schematic diagram of the structure of the perovskite light-emitting layer according to the first embodiment of the present invention. Such as figure 1 As shown, a perovskite light-emitting layer includes a perovskite light-emitting film layer 10 and an encapsulation film layer 20 that wraps the perovskite light-emitting film layer 10, and the encapsulation film layer includes compound A. The formula is X 2+ SO 3 2- R, where X 2+ It is a divalent metal ion, and R is a benzene ring structure containing a hydroxyl functional group. Among them, R contains at least one benzene ring structure, for example, R can contain one benzene ring structure, two benzene ring structures connected together (naphthalene structure) or three benzene ring structures connected together (anthracene structure) . That is, the benzene ring structure R containing a hydroxyl functional group includes one or more of a benzene structure containing at least one hydroxyl functional grou...

no. 2 example

[0046] Based on the technical concept of the embodiment of the present invention, the embodiment of the present invention also provides a method for preparing the perovskite luminescent layer. figure 2 It is a flow chart of the preparation method of the perovskite luminescent layer in the second embodiment of the present invention. Such as figure 2 As shown, the preparation method of the perovskite luminescent layer includes:

[0047] S1. Mixing the Lewis base compound and the halogenated compound containing divalent metal ions to form an encapsulating solution;

[0048] S2, forming a precursor solution capable of forming a perovskite luminescent film layer on the substrate;

[0049] S3. Under a preset time condition, drop a certain amount of the packaging solution into the precursor solution formed on the substrate to form a perovskite light-emitting layer.

[0050] Among them, the halogenated compound can be one or more of fluorinated compounds, chlorinated compounds, brominated c...

no. 3 example

[0069] Figure 4 It is a schematic diagram of the structure of the light emitting diode in the third embodiment of the present invention. Figure 4 Shows the inverted structure of a tin-based perovskite light-emitting diode, such as Figure 4 As shown, the tin-based perovskite light-emitting diode includes a substrate 30, an electron transport layer 70, a perovskite light-emitting layer 60, a hole transport layer 50, a hole injection layer 40, and a cathode 80 which are sequentially stacked from bottom to top.

[0070] The manufacturing method of the above tin-based perovskite light-emitting diode includes:

[0071] (1) Pre-treat the substrate. The pretreatment of the substrate includes: ultrasonically cleaning the substrate with isopropanol and water, and then irradiating the substrate with ultraviolet for 5-10 minutes. Among them, the substrate is a conductive ITO glass substrate.

[0072] (2) Form an electron transport layer. The forming of the electron transport layer includ...

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Abstract

The invention provides a perovskite light-emitting layer and a manufacturing method thereof, a light-emitting device and a display device. The perovskite light-emitting layer comprises a perovskite light-emitting film layer and a packaging film layer wrapping the perovskite light-emitting film layer, the packaging film layer comprises a compound A, a general formula of the compound A is X<2+>SO3<2->R, the X<2+> is a divalent metal ion, and the R is a benzene ring structure containing a hydroxyl functional group. Sability of the light-emitting layer is improved, and a service life of the deviceis prolonged.

Description

Technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a perovskite light-emitting layer and a preparation method thereof, a light-emitting device and a display device. Background technique [0002] Organic-inorganic hybrid perovskite materials have become a recent research hotspot due to their excellent photoelectric properties, especially in the field of solar energy. This new type of perovskite solar cell has reached over 20% in a very short time. High photoelectric conversion efficiency. At the same time, researchers also found that perovskite materials have high-efficiency luminescence properties, and can also be used to prepare high-efficiency light-emitting diodes and lasers. [0003] Perovskite (Perovskite) is a large category of crystalline materials. Broadly speaking, it refers to the perovskite crystal form (ABX 3 )s material. In recent years, the application of emerging metal halide perovskite materials in light...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/52G09F9/00
CPCG09F9/00H10K50/84H10K50/11
Inventor 张爱迪
Owner BOE TECH GRP CO LTD
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