Integrated epitaxy and preclean system
A technology of epitaxy and processing system, which is applied in cleaning methods and utensils, transportation and packaging, crystal growth, etc., which can solve the problems of substrate exposure and increase substrate processing time, etc.
Pending Publication Date: 2020-04-21
APPLIED MATERIALS INC
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- Description
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- Application Information
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Problems solved by technology
However, the pre-cleaning process is usually performed in one or more separate vacuum processing chambers, which may increase the substrate processing time and the chance of exposing the substrate to the surrounding environment
Method used
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Embodiment Construction
[0018] figure 1 A process sequence 100 according to one embodiment of the application is shown. In block 102, oxide is removed from the surface of the semiconductor substrate using a cleaning process. The substrate may include a silicon-containing material, and the surface may include a material such as silicon (Si), germanium (Ge), or silicon germanium (SiGe). In some implementations, the Si, Ge, or SiGe surface may have an oxide layer, such as a native oxide layer and contaminants disposed on the Si, Ge, or SiGe surface. Due to the sensitivity of epitaxial deposition processes to oxides and contaminants, such as carbon-containing contaminants, surface contamination generated by exposure to most typical cleanroom environments for a few hours may become large enough to allow accumulated oxide and Contaminants affect the quality of subsequently formed epitaxial layers.
[0019] The substrate surface may be cleaned by performing an oxide removal process and a contaminant remo...
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Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with themixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly andin fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled throughthe substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.
Description
technical field [0001] Embodiments of the present application relate generally to apparatus and methods for cleaning substrate surfaces. Background technique [0002] Integrated circuits are formed in and on silicon and other semiconductor substrates. In the case of single crystal silicon, the substrate is produced by growing an ingot from a bath of molten silicon, followed by sawing the solidified ingot into multiple substrates. An epitaxial silicon layer can then be formed on the monocrystalline silicon substrate to form a defect-free silicon layer that can be doped or undoped. Semiconductor devices such as transistors can be fabricated from epitaxial silicon layers. The electrical properties of the formed epitaxial silicon layer are generally better than those of a single crystal silicon substrate. [0003] The surface of monocrystalline silicon and epitaxial silicon layers are susceptible to contamination when exposed to the ambient conditions of typical substrate fab...
Claims
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IPC IPC(8): H01L21/67H01L21/677H05H1/46H01L21/683
CPCC23C16/455C23C16/513C23C16/52C23C16/0245H01L21/02381H01L21/67103H01L21/67109H01L21/67115H01L21/67184H01L21/67248H01L21/68742H01J37/32513H01J37/32082H01J37/32899H01L21/02661H01L21/02532H01L21/0262H01J37/32522H01L21/02046C23C16/0209C23C16/54C23C16/24C23C16/30H01L21/67017H01L21/67772H05H1/46H01L21/683H01L21/67098H01L21/02049C30B25/02B08B7/0035H01J2237/334H01J2237/335C23C16/45565C23C16/505H01L21/02315H01L21/32136H01L21/67207H01J37/32357
Inventor 劳拉·哈夫雷查克舒伯特·S·楚图沙尔·曼德雷卡尔埃罗尔·C·桑切斯劳建邦
Owner APPLIED MATERIALS INC