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Porous SnO2 hydrogen-sensitive film and preparation and application thereof

A hydrogen-sensitive thin film and precursor liquid technology, applied in the field of sensors, can solve the problems of long response and recovery time, unsatisfactory stability, and poor sensitivity, and achieve the effect of regular arrangement, uniform size, and improved sensitivity

Active Publication Date: 2020-04-28
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Purpose of the invention: the technical problem to be solved by the present invention is to provide a porous SnO 2 Hydrogen-sensitive thin film and preparation method thereof, the sensor hydrogen-sensitive material has the advantages of good sensitivity, short response and recovery time, good repeatability, etc.

Method used

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  • Porous SnO2 hydrogen-sensitive film and preparation and application thereof
  • Porous SnO2 hydrogen-sensitive film and preparation and application thereof
  • Porous SnO2 hydrogen-sensitive film and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) 0.9g SnCl 4 2H 2 O was dissolved in 20ml of absolute ethanol, and then the prepared solution was stirred at 70°C at 600rpm for 1h, and the stirred solution was left to stand at 70°C for 24h to obtain a tin precursor;

[0047] (2) Take 0.4ml of PS microsphere monodispersion (PS microsphere content 2.5% w / v) and add it to 10ml of the tin precursor solution obtained in step (1), and stir at room temperature for 10-15min until a uniform PS tin precursor for suspension;

[0048] (3) Place the silicon substrate with the interdigitated platinum electrode successively in acetone, absolute ethanol and deionized water, respectively, and use ultrasonic cleaning for 4 to 5 minutes, and then place it in an oven at 100° C. for drying for later use;

[0049] (4) Spin-coat the tin precursor of the homogeneous PS suspension obtained in step (2) on the silicon substrate dried in step (3), and the amount of each layer of spin-coating solution is 25 μl / cm 2 , each layer of solution ...

Embodiment 2

[0061] (1) 0.9g SnCl 4 2H 2 O was dissolved in 20ml of absolute ethanol, and then the prepared solution was stirred at 65°C at 550rpm for 2h, and the stirred solution was left at 65°C for 24h to obtain a tin precursor;

[0062] (2) Take 0.2ml of PS microsphere monodispersion (PS microsphere content 2.5% w / v) and add it to 10ml of the tin precursor solution obtained in step (1), and stir at room temperature for 10-15min until a uniform PS tin precursor for suspension;

[0063] (3) Place the silicon substrate with the interdigitated platinum electrode successively in acetone, absolute ethanol and deionized water, respectively, and use ultrasonic cleaning for 4 to 5 minutes, and then place it in an oven at 100° C. for drying for later use;

[0064] (4) Spin-coat the tin precursor of the homogeneous PS suspension obtained in step (2) on the silicon substrate dried in step (3), and the amount of each layer of spin-coating solution is 25 μl / cm 2 , each layer of solution was first...

Embodiment 3

[0068] (1) 0.9g SnCl 4 2H 2 O was dissolved in 20ml of absolute ethanol, and then the prepared solution was stirred at 60°C at 500rpm for 3h, and the stirred solution was left to stand at 60°C for 24h to obtain a tin precursor;

[0069] (2) Take 1ml of PS microsphere monodispersion (PS microsphere content 2.5% w / v) and add it to 10ml of the tin precursor solution obtained in step (1), and stir at room temperature for 10-15min until a uniform PS suspension is obtained liquid tin precursor;

[0070] (3) Place the silicon substrate with the interdigitated platinum electrode successively in acetone, absolute ethanol and deionized water, respectively, and use ultrasonic cleaning for 4 to 5 minutes, and then place it in an oven at 100° C. for drying for later use;

[0071] (4) Spin-coat the tin precursor of the homogeneous PS suspension obtained in step (2) on the silicon substrate dried in step (3), and the amount of each layer of spin-coating solution is 25 μl / cm 2, each layer ...

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Abstract

The invention discloses a porous SnO2 hydrogen-sensitive film and preparation and application thereof. SnCl4. 2H2O is dissolved in absolute ethyl alcohol and uniformly stirred at the temperature of 60-70 DEG C to obtain a precursor solution of tin; then adding polystyrene (PS) microsphere monodispersion liquid, and uniformly stirring at room temperature to obtain tin precursor liquid of polystyrene (PS) microsphere suspension liquid; sequentially placing a silicon substrate with the interdigital platinum electrode in acetone, absolute ethyl alcohol and deionized water to be subjected to ultrasonic cleaning, and then placing the silicon substrate placed in a drying oven to be dried for use; uniformly spin-coating the dried silicon substrate with the tin precursor solution of the polystyrene(PS) microsphere suspension liquid, and then carrying out surface drying; and finally, heating to 500 DEG C at a heating rate of 1-3 DEG C / min, calcining for 2-3 hours, and cooling to obtain the product. The gas sensitivity of the porous SnO2 hydrogen-sensitive film prepared by the method is superior to that of a SnO2 film, the sensitivity of a sensor is remarkably improved, the sensitivity is improved to 30.4 from original 8 and the improvement multiple is about 4 times.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a porous SnO 2 Hydrogen sensitive film and its preparation method and application. Background technique [0002] With the continuous consumption of fossil energy, environmental problems are increasing, and human demand for high-quality and environmentally friendly energy is increasing. The possibility of hydrogen energy becoming a new energy source in the future is increasing. As an efficient, high-energy, renewable, and zero-emission clean energy, hydrogen has attracted extensive attention. However, due to the fast diffusion speed of hydrogen, wide combustion range, 4-75% combustion limit, and easy penetration into most materials, there are many obstacles in practical application. Furthermore, hydrogen is a colorless, odorless, and tasteless gas. Therefore, once hydrogen leaks during storage and transportation, accidents are likely to occur. Therefore, the detection and moni...

Claims

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Application Information

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IPC IPC(8): C01G19/02G01N27/12C04B41/87
CPCC01G19/02G01N27/127G01N27/125C04B41/009C04B41/505C04B41/87C01P2004/03C01P2004/04C01P2002/72C01P2004/20C04B32/005C04B41/4552
Inventor 殷晨波韩忠俊章石赟任珺殷明周
Owner NANJING UNIV OF TECH
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