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Photoresist resin monomer synthesized by aldopentose and its synthesis method

A technology of resin monomer and synthesis method, which is applied in the field of photoresist resin monomer and its synthesis, can solve the problem of low resolution of photolithographic patterns, and achieve the goals of improving resolution, increasing corrosion resistance, and improving adhesion Effect

Active Publication Date: 2021-06-04
上海博栋化学科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, due to the specific structure of the acid-sensitive resin monomer in the existing photoresist, there is a problem of low photolithographic pattern resolution

Method used

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  • Photoresist resin monomer synthesized by aldopentose and its synthesis method
  • Photoresist resin monomer synthesized by aldopentose and its synthesis method
  • Photoresist resin monomer synthesized by aldopentose and its synthesis method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] This embodiment provides a kind of photoresist resin monomer synthesized by aldopentose, the reaction scheme of the synthetic method of this photoresist resin monomer is as follows:

[0029]

[0030] It specifically includes the following steps:

[0031] S1. After dissolving glycolaldehyde (formula A1, 20g, 333mmol) in dichloromethane (200mL), add triethylamine (68g, 672mmol), and place in an ice-water bath to cool to 0°C; then, Slowly add acryloyl chloride (30.2g, 334mmol) dropwise. After the dropwise addition, continue to stir for 1 hour at 0°C. Then, slowly raise the temperature to normal temperature and continue to stir for 3 hours to react. After the reaction, add the reaction solution to the ice. Quenched in water (100mL), neutralized with saturated sodium bicarbonate solution, extracted three times with dichloromethane (80mL*3), the obtained organic phase was washed with saturated brine, dried over anhydrous sodium sulfate, and then vacuum-spun Dry to obtain ...

Embodiment 2

[0034] This embodiment provides a kind of photoresist resin monomer synthesized by aldopentose, the reaction scheme of the synthetic method of this photoresist resin monomer is as follows:

[0035]

[0036] It specifically includes the following steps:

[0037] S1, after dissolving hydroxyacetone (formula B1, 20g, 270mmol) in dichloromethane (200mL), add triethylamine (55g, 544mmol), and place in an ice-water bath to cool to 0°C; then, slowly Add acryloyl chloride (30.2g, 334mmol) dropwise, and continue stirring at 0°C for 1 hour after the dropwise addition. Then, slowly raise the temperature to normal temperature, and continue stirring for 3 hours for reaction. After the reaction, add the reaction solution to ice water ( 100mL), and neutralized with saturated sodium bicarbonate solution, extracted three times with dichloromethane (80mL*3), the obtained organic phase was washed with saturated brine, dried over anhydrous sodium sulfate, and then vacuum spin-dried to obtain ...

Embodiment 3

[0040] This embodiment provides a kind of photoresist resin monomer synthesized by aldopentose, the reaction scheme of the synthetic method of this photoresist resin monomer is as follows:

[0041]

[0042] It specifically includes the following steps:

[0043] S1. After dissolving p-hydroxycyclohexanone (formula C1, 20g, 175mmol) in dichloromethane (200mL), add triethylamine (36g, 356mmol), and place in an ice-water bath to cool to 0°C; then , slowly add acryloyl chloride (15.9g, 176mmol) dropwise, continue to stir at 0 degrees Celsius for 1 hour after the dropwise addition, then slowly raise the temperature to normal temperature, continue to stir for 3 hours to react, after the reaction is over, add the reaction solution to Quenched in ice water (100mL), neutralized with saturated sodium bicarbonate solution, extracted three times with dichloromethane (80mL*3), the obtained organic phase was washed with saturated brine, dried over anhydrous sodium sulfate, and vacuum Spi...

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Abstract

The invention discloses a photoresist resin monomer synthesized from aldopentose and a synthesis method thereof, belonging to the fields of chemical synthesis and photolithography materials. The general structural formula of the photoresist resin monomer is: in the formula, R 1 is hydrogen or methyl; R 2 Is an alkyl group or a cycloalkyl group; M is a divalent linking group. The synthesis method of the photoresist resin monomer is as follows: reacting a hydroxyl-containing aldehyde or ketone with an acrylic compound to obtain an intermediate; reacting the intermediate with aldopentose under acid catalysis to obtain the photoresist Engraving resin monomer. The photoresist resin monomer provided by the invention has the characteristics of increasing the corrosion resistance, improving the adhesion between the resin and the wafer, increasing the solubility of the resin in alkaline developing solution, improving the edge roughness and improving the resolution.

Description

technical field [0001] The invention relates to the fields of chemical synthesis and photolithography materials, in particular to a photoresist resin monomer synthesized from aldopentose and a synthesis method thereof. Background technique [0002] Photolithography technology refers to the chemical sensitivity of photoresist materials (especially photoresist) under the action of visible light, ultraviolet rays, electron beams, etc., through exposure, development, etching and other processes, the design on the mask plate Graphics microfabrication technology that transfers graphics to the substrate. [0003] Photolithographic materials (especially photoresist), also known as photoresist, are the most critical functional chemical materials involved in photolithography technology. The main components are resin, photoacid generator, and corresponding additives and Solvents, such materials are chemically sensitive to light (including visible light, ultraviolet rays, electron beam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07D493/14C07D493/20C08F22/20G03F7/004
CPCC07B2200/07C07D493/14C07D493/20C08F22/20G03F7/004
Inventor 喻珍林潘惠英蒋小惠毕景峰贺宝元
Owner 上海博栋化学科技有限公司
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