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A kind of broadband near-infrared luminescent material and its preparation method and application

A luminescent material, near-infrared technology, applied in luminescent materials, chemical instruments and methods, semiconductor devices, etc., can solve the problems of low luminous efficiency, poor chemical stability, fluorescence heat quenching, etc., achieve high luminous efficiency, low cost, The effect of low thermal quenching of fluorescence

Active Publication Date: 2021-07-13
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To this end, researchers have developed a series of broadband near-infrared luminescent materials and light-emitting devices that can be excited by visible light, such as Chinese patents CN107573937A, CN108795424A, CN109913209A, CN108913135A and CN110093160A, US patents US20100320480A1, US9528876B2 and US20180358514A, and non-patent literature (Journal of Luminescence 202(2018)523–531) announced a series of garnet-structured near-infrared luminescent materials X 3 sc 2 Ga 3 o 12 (X=Lu,Y,Gd,La):Cr 3+ , but the current near-infrared luminescent materials have various problems, such as low luminous efficiency, severe fluorescence thermal quenching, or poor chemical stability, etc.

Method used

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  • A kind of broadband near-infrared luminescent material and its preparation method and application
  • A kind of broadband near-infrared luminescent material and its preparation method and application
  • A kind of broadband near-infrared luminescent material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Preparation of Gd 3 sc 1.47 Al 0.5 Cr 0.03 Ga 3 o 12 :

[0043] Press Gd3 sc 1.47 Al 0.5 Cr 0.03 Ga 3 o 12 The molar mass ratio of each element in the medium, accurately weigh the high-purity Gd 2 o 3 , Sc 2 o 3 , Cr 2 o 3 , Ga 2 o 3 , Al 2 o 3 , and 3 wt% H 3 BO 3 As a flux, the mixed powder is obtained after fully grinding; the obtained mixed powder is sintered at 1380°C in the air for 6 hours, and after cooling down, it is properly ground, and then sintered again at 1380°C in the air for 6 hours; after cooling, the obtained sintered product is Grinding, washing, and grading treatment can obtain the desired near-infrared luminescent material.

[0044] Such as figure 1 Shown is the XRD collection of samples of the sample prepared by the present embodiment, by the attached figure 1 It can be seen that the luminescent material is a single garnet crystal phase.

[0045] Such as figure 2 Shown are the excitation and emission spectra of the sample...

Embodiment 2

[0048] Preparation of Gd 3 Al 1.97 Cr 0.03 Ga 3 o 12 :

[0049] Press Gd 3 Al 1.97 Cr 0.03 Ga 3 o 12 The molar mass ratio of each element in the medium, accurately weigh the high-purity Gd 2 o 3 , Cr 2 o 3 , Ga 2 o 3 , Al 2 o 3 , and 3 wt% H 3 BO 3 As a flux, the mixed powder is obtained after fully grinding; the obtained mixed powder is sintered at 1350°C in the air for 6 hours, and after cooling down, it is properly ground, and then sintered again at 1350°C in the air for 6 hours; after cooling, the obtained sintered product is Grinding, washing, and grading treatment can obtain the desired near-infrared luminescent material.

[0050] Such as Figure 4 Shown is the excitation and emission spectra of the sample of this embodiment. From attached Figure 4 It can be seen that the phosphor is excited in the blue light of 400-500nm and the red light region of 600-700nm in the visible light band, and emits broadband near-infrared light with a peak wavelength ...

Embodiment 3

[0056] The chemical formulas of the near-infrared luminescent materials in Examples 3-13 are shown in Table 1 below. The preparation method of the materials in each embodiment is similar to that of Embodiment 1. It is only necessary to weigh the raw materials according to the molar mass ratio of each element in the luminescent material of each embodiment, and carry out mixing, grinding, and sintering. The sintering temperature can be adjusted appropriately to obtain Obtaining a single crystal phase means obtaining the desired near-infrared luminescent material. The luminescent properties of the luminescent materials obtained in each example were characterized, and the results are shown in Table 1 below.

[0057] It can be known from Table 1 that the near-infrared luminescent material of the present invention has high luminous intensity and adjustable emission wavelength. Example 2 Compared with the comparative example, the Al element is used to replace the Sc element in the e...

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Abstract

The invention discloses a broadband near-infrared luminescent material, a preparation method and application thereof. The chemical formula of the broadband near-infrared luminescent material is: Gd 3‑x Re x sc 2‑y‑z Cr y Al z Ga 3 o 12 , wherein, Re is one of Bi, La, Tb, Y and Lu or any combination thereof, and 0≤x≤0.3, 0.01≤y≤0.2, 0.2≤z<2; the near-infrared luminescent material of the present invention can be in Under the excitation of visible light with a wavelength of 400-700nm, it emits a broadband near-infrared light of 700-1000nm. The near-infrared luminescent material of the present invention has high luminous efficiency, low fluorescence heat quenching, and its preparation method is simple. The luminescent device containing the luminescent material can be widely used in plant lighting, face recognition, security monitoring, food detection, biological medical and other fields.

Description

technical field [0001] The invention belongs to the technical field of luminescent materials, and in particular relates to a broadband near-infrared luminescent material and a preparation method and application thereof. Background technique [0002] Near-infrared (650-2500nm) luminescent materials have very important applications in the fields of solar spectrum simulation, solar cell spectral conversion and near-infrared spectral analysis technology. Broadband near-infrared luminescent light sources can be used in non-destructive testing, face recognition, and biomedical fields. Infrared LED chips have problems such as narrow luminous range, low efficiency and high cost. Tungsten lamps and halogen lamps have low near-infrared luminous efficiency and cannot be miniaturized. In comparison, the phosphor-converted light source using "visible light LED + near-infrared luminescent material" has high luminous efficiency, low cost and small size. To this end, researchers have dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/80H01L33/50
CPCC09K11/7708C09K11/7776H01L33/502H01L2933/0041
Inventor 肖文戈邱建荣刘小峰
Owner ZHEJIANG UNIV
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