Self-aligned gate gallium nitride enhanced vertical power device based on suspension field plate
A vertical power device, self-aligned technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc. Effects of cost reduction, high process compatibility, and low on-resistance
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[0037] Example one
[0038] See figure 1 with figure 2 , figure 1 It is a schematic structural diagram of a self-aligned gate gallium nitride enhanced vertical power device based on a floating field plate provided by an embodiment of the present invention, figure 2 It is a schematic diagram of a three-dimensional structure of a self-aligned gate gallium nitride enhanced vertical power device based on a floating field plate provided by an embodiment of the present invention (not including the third dielectric layer). The self-aligned gate gallium nitride enhancement type vertical power device based on a floating field plate includes: a self-supporting Si-doped GaN substrate 1; a drain electrode 5 located under the self-supporting Si-doped GaN substrate 1; n-type GaN Layer 2, located on the self-supporting Si-doped GaN substrate 1; n-type GaN transition layer 6, located on the n-type GaN layer 2; n-type GaN channel layer 7, located on the n-type GaN transition layer 6; A dielectr...
Example Embodiment
[0056] Example two
[0057] See Figure 3a-Figure 3l , Figure 3a-Figure 3l It is a schematic flow chart of a method for manufacturing a self-aligned gate gallium nitride enhanced vertical power device based on a floating field plate provided by an embodiment of the present invention, including the steps:
[0058] S1. Using Molecular Beam Epitaxy (MBE) process to grow n-type GaN material on a self-supporting Si-doped GaN substrate 1, see Figure 3a ;include:
[0059] S11. Grow a heavily doped n-type GaN layer 2 on a self-supporting Si-doped GaN substrate 1, wherein the thickness of the n-type GaN layer 2 is 100-300 nm, the doping element is Si, and the doping concentration is 1× 10 18 cm -3 ~1×10 19 cm -3 ;
[0060] S12. Growing a low-doped n-type GaN layer 3 on the n-type GaN layer 2, wherein the thickness of the n-type GaN layer 3 is 6-8 μm, the doping element is Si, and the doping concentration is 1×10 15 cm -3 ~1×10 17 cm -3 ;
[0061] S13. Growing an n-type GaN contact layer 4 on ...
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