A silicon-based integrated laser chip flip-chip coupling structure

Abstract

The invention discloses a silicon-based integrated laser chip flip-chip coupling structure, the left side of the structure is an active laser chip, the right side of the structure is a passive silicon-based chip, and the left side of the passive silicon-based chip has a groove Groove, the active laser chip is bonded with the passive silicon-based chip by flip-chip in the groove; the passive silicon-based chip is provided with silicon-on-insulator, and the epitaxial part of silicon-on-insulator is used as the coupling and receiving channel of light; The top and bottom layers of the active laser chip are provided with metal contacts connected to the electrodes; the active laser chip is used as an excitation source to emit light, and the light is coupled into the epitaxial channel of silicon on insulator through the evanescent field to form light field transmission. The invention can realize high-efficiency optical coupling of active devices and passive devices, and lays the foundation for large-scale photon integration technology.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic integration and coupling, and in particular relates to a heterogeneous integration structure of an active device on a passive silicon base. Background technique [0002] In recent years, heterogeneously integrated III-V / Si lasers have developed rapidly. The low loss (<1dB / cm) of passive silicon waveguides enables various laser configurations, such as narrow linewidth and low phase noise lasers, broadly tunable lasers, and multi-wavelength lasers, which meet next-generation high-capacity coherent communications system requirements. However, due to the direct bandgap and high optical gain of III-V semiconductors, and because silicon is a semiconductor material with an indirect bandgap and low luminous efficiency, silicon has always been considered unsuitable for making light sources or detectors, so III-V The integration of active devices such as lasers, modulators or detectors on si...

AI Technical Summary

Problems solved by technology

However, due to the direct bandgap and high optical gain of III-V semiconductors, and because silicon is a semiconductor material with an indirect bandgap and low luminous efficiency, silicon has always been considered unsuitable for making light sources or detectors, so III-V The integration of active devices such as lasers, modulators or detectors on silicon has important research value

[0003] The current main technical solution for light sources on silicon substrates is to directly grow III-V materials on silicon substrates, but the lattice constants and thermal expansion coefficients of silicon materials, gallium arsenic, and indium phosphorus do not match very much. The defect density of the direct growth of indium phosphorus materials is well controlled, but the resulting size is still in the nanoscale range, and it is still very difficult to achieve large-scale integration.

[0004] Existing silicon-based integrated laser technology patents such as: Chinese patent publication (publication number CN110289553A) "Multi-wavelength silicon-based III-V group hybrid integrated laser, its array unit and preparation method" proposes a laser array in each array The waveguide uses multiple waveguides coupled into a silicon waveguide as a single wavelength output unit to increase the output power of the laser, but the corresponding multi-waveguide coupling will introduce insertion loss, and its power consumption and thermal stability have an adverse effect on large-scale integration; Chinese patent publication (publication number CN102684072A) "Hybrid Integrated Laser and Its Preparation Method" proposes a hybrid integrated laser and its preparation method to realize a silicon-based integrated laser chip with low power consumption, high integration and practicality light source, but it only involves the bonding design of active laser chips, and does not realize the optical interconnection between silicon-based passive chips and active chips

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