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A silicon-based three-dimensional integrated microwave frequency conversion component

A three-dimensional integration, microwave frequency conversion technology, applied in electrical components, semiconductor devices, electric solid devices and other directions, can solve the problems of overall heating, low yield, only reach 0.1mm, etc.

Active Publication Date: 2021-09-10
扬州船用电子仪器研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional assembly process has been relatively mature, but in the face of the demand for high-density integration of microsystems, its shortcomings are gradually exposed, which is reflected in the fact that almost all processes are heated as a whole, overly dependent on temperature gradients, insufficient process compatibility, and manufacturing accuracy. low level problem
For example, if the substrate designed and manufactured by LTCC process is uneven in circuit design or sintering temperature, different degrees of board surface warping will occur, which greatly limits the application of LTCC process. In a phased array frequency conversion system, it is difficult to guarantee the amplitude and phase consistency between components
For example, the substrate made by Rogers 4350 hybrid lamination technology, the precision of standard printing process can only reach 0.1mm, and the structural design of the blind hole between the layers needs to be gold-plated at the end of the whole plate, so the reliability of gold-plating in the hole is difficult to guarantee. In the application of specialized frequency conversion components, it often leads to low yield rate in mass production

Method used

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  • A silicon-based three-dimensional integrated microwave frequency conversion component
  • A silicon-based three-dimensional integrated microwave frequency conversion component
  • A silicon-based three-dimensional integrated microwave frequency conversion component

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Embodiment

[0029] to combine Figure 1~2 In this embodiment, firstly, according to the function of the microwave frequency conversion component, the frequency conversion component is divided into two independent package modules, the preselection filter gain control component D1 and the mixing digital sampling component D2, wherein the preselection filter gain control component D1 is an independent silicon-based package Structure module, the chip is built in the cavity inside the silicon substrate, and the pads of the BGA array are placed on the bottom and top; the mixing digital sampling component D2 is also an independent silicon-based self-sealing module, the chip is built in the cavity inside the silicon substrate, and the bottom It is to place high temperature BGA array balls.

[0030] The mixing digital sampling component D2 and the pre-selection filter gain control component D1 are aligned up and down using a high-temperature BGA reflow process, and after the combination, the BGA a...

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Abstract

The invention discloses a silicon-based three-dimensional integrated microwave frequency conversion component. The frequency conversion component includes a preselected filter gain control component set on the lower layer and a frequency mixing digital sampling component set on the upper layer, wherein the preselected filter gain control component is an independent silicon-based package structure module, and the chip is built in the cavity inside the silicon substrate. The BGA array pad is set on the top; the preselection filter gain control component is used for preselection filtering, gain control, and phase adjustment of the external input signal, and provides a radio frequency channel for upper layer transmission; the mixing digital sampling component is an independent silicon-based Self-sealing module, the chip is built in the cavity inside the silicon substrate, and the bottom is equipped with high-temperature BGA array solder balls; the frequency mixing digital sampling component changes the input high-frequency signal to low frequency, then samples and shapes the signal, and outputs the digital signal externally. The invention improves the transmission quality of microwave and millimeter wave signals, and has the advantages of small size, low power consumption, high precision and stability.

Description

technical field [0001] The invention relates to the technical field of electronic communication, in particular to a silicon-based three-dimensional integrated microwave frequency conversion component. Background technique [0002] With the advancement of monolithic integrated circuit technology, new electronic materials and assembly and interconnection technology, solid-state active phased array technology and high-sensitivity superheterodyne receivers have been more and more widely used in military and civilian electronic equipment. , a large number of miniaturized, lightweight, highly reliable, multi-functional and low-cost microwave front-end components have become an urgent need. [0003] The traditional assembly process has been relatively mature, but in the face of the demand for high-density integration of micro-systems, shortcomings have gradually been exposed, which is reflected in the fact that almost all processes are heated as a whole, overly dependent on tempera...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/16H04B1/26
CPCH01L25/162H01L25/165H04B1/26
Inventor 韦炜桂盛王勇孙彪张兴稳倪大海
Owner 扬州船用电子仪器研究所