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Preparation method of high-purity tungsten plate easy to machine

A mechanical processing, high-purity technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of difficult mechanical processing, high brittleness of chemical vapor deposition, etc., to achieve improved processing performance, high density , thickness controllable effect

Inactive Publication Date: 2020-05-15
KUNMING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In summary, ultra-high-purity tungsten can be prepared by chemical vapor deposition, and the impurity content and density can be effectively controlled. However, the brittleness of chemical vapor deposition is still relatively high, which brings great difficulties to mechanical processing.

Method used

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Effect test

Embodiment 1

[0027] (1) Preparation of tungsten slabs by chemical vapor deposition: In a closed reaction chamber at atmospheric pressure, hydrogen and tungsten hexafluoride were used as raw materials to deposit a tungsten plate with a thickness of 10 mm on the surface of a copper substrate at a temperature of 600 °C; hydrogen and tungsten hexafluoride The purity of tungsten hexafluoride is greater than 99.99 wt.%, and the purity of the obtained tungsten plate is greater than 99.99999%.

[0028] (2) Rolling: The tungsten slab obtained in step (1) was heated to 1550°C in a hydrogen atmosphere, annealed for 60 min, and the processing rate was controlled to 37% for the first pass of rolling, followed by tempering at 1500°C for 45 min; controlled processing rate 23% for the second rolling pass, followed by tempering at 1450°C for 45 min; controlled processing rate 22% for the third pass rolling, followed by tempering at 1400°C for 45 min; controlled processing The rate is 24% for the fourth pas...

Embodiment 2

[0032] (1) Preparation of tungsten slabs by chemical vapor deposition: In a closed reaction chamber at atmospheric pressure, hydrogen and tungsten hexafluoride were used as raw materials to deposit a tungsten plate with a thickness of 40 mm on the surface of a copper substrate at a temperature of 500 °C; hydrogen and tungsten hexafluoride The purity of tungsten hexafluoride is greater than 99.99 wt.%, and the purity of the obtained tungsten plate is greater than 99.99999%.

[0033] (2) Rolling: Heat the tungsten slab obtained in step (1) to 1500°C in a hydrogen atmosphere, anneal for 30 minutes, and control the processing rate to 30% for the first rolling pass, and then temper at 1470°C for 30 minutes min; controlled processing rate was 20% for the second rolling pass, followed by tempering at 1440°C for 30 min; controlled processing rate was 22% for the third pass rolling, followed by tempering at 1410°C for 30 min; controlled processing The rate is 25% for the fourth pass ro...

Embodiment 3

[0036] (1) Preparation of tungsten slabs by chemical vapor deposition: In a sealed reaction chamber at atmospheric pressure, hydrogen and tungsten hexafluoride were used as raw materials to deposit a tungsten plate with a thickness of 20 mm on the surface of a copper substrate at a temperature of 550 °C; hydrogen and tungsten hexafluoride The purity of tungsten hexafluoride is greater than 99.99 wt.%, and the purity of the obtained tungsten plate is greater than 99.99999%.

[0037] (2) Rolling: Heat the tungsten slab obtained in step (1) to 1520°C in a hydrogen atmosphere, anneal for 60 minutes, control the processing rate to 40% for the first rolling pass, and then temper at 1480°C for 60 minutes min; controlled processing rate was 20% for the second rolling pass, followed by tempering at 1440°C for 60 min; controlled processing rate was 23% for the third pass rolling, followed by tempering at 1400°C for 60 min; controlled processing The rate is 25% for the fourth pass rollin...

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Abstract

The invention belongs to the technical field of refractory metal special machining, and relates to a preparation method of a high-purity tungsten plate easy to machine. The method comprises three technological processes of tungsten plate blank preparation through chemical vapor deposition, rolling and annealing. Chemical vapor deposition tungsten is modified through a cooling rolling method, finally, stress relief annealing is conducted on the obtained tungsten plate, and the high-performance tungsten plate is obtained. The problem that the ductility is poor at the room temperature is solved,and the advantages of high purity and large density are reserved. The method is simple in technology, large-batch preparation can be achieved, and size regulation and control can be conducted according to different application backgrounds.

Description

technical field [0001] The invention relates to a method for preparing a high-purity tungsten plate which is easy to be machined and belongs to the field of high-purity refractory metal processing. Background technique [0002] At present, semiconductor manufacturing has become the largest strategic new industry with high technology content in the world today. Tungsten, a refractory metal, is widely used in the manufacturing process of semiconductor large-scale integrated circuits due to its high electron migration resistance, excellent high temperature stability and extremely high electron emission coefficient, such as sputtering coating materials for making gate circuit electrodes, wiring metals and Shield metal materials, etc. The increase in the integration of large-scale integrated circuits in microelectronics technology puts forward higher requirements for the purity of materials; if the purity of the tungsten target is poor, the reliability of large-scale integrated ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/14C23C16/56C22F1/18C22F1/02
CPCC23C16/14C23C16/56C22F1/18C22F1/02
Inventor 檀校聂志华谭成文胡劲王玉天于晓东王开军赵修臣
Owner KUNMING UNIV OF SCI & TECH
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