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Near-infrared transparent metal chalcogenide/carbon nanotube composite flexible film and preparation method thereof

A technology of carbon nanotube compounding and chalcogenides, which is applied in the direction of nanotechnology, thermoelectric device manufacturing/processing, thermoelectric device node lead-out materials, etc., can solve the problems of unstable adsorption and inability to accurately control the composition, and achieve optimization Thermoelectric performance, good bending and flexibility effect

Inactive Publication Date: 2020-05-29
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method solves the problem that chemical solution synthesis and other methods cannot precisely control the composition, structure and performance of low-dimensional materials due to instability such as adsorption.

Method used

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  • Near-infrared transparent metal chalcogenide/carbon nanotube composite flexible film and preparation method thereof
  • Near-infrared transparent metal chalcogenide/carbon nanotube composite flexible film and preparation method thereof
  • Near-infrared transparent metal chalcogenide/carbon nanotube composite flexible film and preparation method thereof

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Embodiment 1

[0060]In this example, the preparation method of the two-dimensional infrared transparent flexible composite thermoelectric thin film that can be precisely adjusted, firstly transfer the SWCNT substrate with high flexibility and high infrared transparency to the pre-treated clean support material; then the support material Put the SWCNTs on the surface into a glove box and heat at 100-500°C to desorb oxygen and other impurities adsorbed on the SWCNTs; after cooling down to room temperature, put the desorbed SWCNTs into a high vacuum balance magnetron sputtering deposition In the cavity, the gas pressure in the high vacuum balance magnetron sputtering deposition cavity is (4~8)×10 -5 Start heating at Pa, when the temperature is 300-500°C, keep it warm for 1-3h, and pass high-purity argon gas with a volume purity of 99.99%, so that the gas pressure in the balanced magnetron sputtering deposition chamber is maintained at 0.5-2Pa. Hui began to prepare metal chalcogenide / single-wal...

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Abstract

The invention belongs to the field of composite materials and relates to a preparation and structural design method of a metal chalcogenide / single-walled carbon nanotube composite film material with flexibility and infrared permeability. A single-walled carbon nanotube film with flexibility and high infrared transmittance is used as a substrate and is compounded with a metal chalcogenide with excellent thermoelectric performance and infrared transmittance to form the composite film material. According to the preparation method, an SWCNT substrate is transferred to a pretreated clean supportingmaterial; the SWCNT on the supporting material is arranged into a glove box, the SWCNT is heated, so that oxygen and other impurities adsorbed on the SWCNT can be desorbed; after the SWCNT cools to room temperature, the desorbed SWCNT is putted into a high vacuum balance magnetic controller; heating is started when gas pressure in magnetic controller is (4-8)*10 <-5> Pa; when the temperature is 300-500 DEG C, heat preservation is carried out for 1-3 h; high-purity argon is introduced, and when gas pressure in a balanced magnetron sputtering deposition cavity is kept at 0.5-2 Pa, the flexiblethermoelectric metal chalcogenide / single-walled carbon nanotube composite film with infrared permeability is prepared through luminance starting.

Description

technical field [0001] The invention belongs to the field of composite materials, and in particular relates to a method for preparing and structurally designing a metal chalcogenide / single-wall carbon nanotube composite film material with both flexibility and infrared transparency. The composite material can be applied to generate electricity in portable wearable devices, and can also ensure the user's requirements for temperature comfort by means of infrared radiation and heat dissipation. At the same time, buildings such as walls can be cooled without consuming the earth's resources. Background technique [0002] With the continuous development of low-power electronic technologies, such as: semiconductors on a chip and radios, etc., there are opportunities for wearable devices to use energy sources other than batteries. In wearable devices, the battery increases the volume and weight of the device, thereby reducing the portability of the device, and also requires plug-in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/22H01L35/34B82Y40/00H10N10/852H10N10/01H10N10/855
CPCB82Y40/00H10N10/852H10N10/855H10N10/01
Inventor 邰凯平李颖靳群
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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