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LED preparation process

A technology of preparation process and pressure, which is applied in the field of LED preparation process, can solve the problems of unsatisfactory LED performance and difficulty in meeting customer requirements, and achieve the effects of reducing the risk of cracking, reducing interface stress, and increasing growth rate

Active Publication Date: 2020-06-05
江西通利晟电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The light-emitting layer is generally composed of periodically stacked light-emitting well layers and light-emitting barrier layers. The light-emitting well layer forms indium gallium nitride by doping indium in the gallium nitride layer, and the light-emitting barrier layer is a gallium nitride layer. Many deficiencies make the performance of the produced LED not ideal enough to meet customer requirements

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Embodiment Construction

[0027] The LED manufacturing process provided by the present invention will be described in more detail below in conjunction with the accompanying drawings, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the advantages of the present invention Effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0028] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating th...

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Abstract

The invention provides an LED preparation process, which comprises the following steps: providing a substrate, and sequentially forming a buffer layer, a first semiconductor layer, a transition layer,a light emitting layer and a second semiconductor layer on the substrate; wherein the pressure of a reaction cavity is kept at a first pressure in the process of forming the first semiconductor layer; wherein the pressure of the reaction cavity in the process of forming the light-emitting layer is kept at a second pressure, the second pressure is smaller than the first pressure, the initial pressure of the reaction cavity in the process of forming the transition layer is equal to the first pressure, and the final pressure is equal to the second pressure. According to the invention, the transition layer is introduced between the first semiconductor layer and the light emitting layer; continuous growth is kept in the pressure change process of the stage, interfacial stress is reduced through the transition layer, the first semiconductor layer can grow under the high-pressure condition, the growth rate is increased, and due to the fact that the pressure is gradually reduced in the transition layer forming process, the tensile stress on the surface of the first semiconductor layer is gradually reduced, the cracking risk in the process is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED preparation process. Background technique [0002] LED (LightingEmittingDiode) lighting is light-emitting diode lighting, which is a semiconductor solid-state light-emitting device. It uses a solid semiconductor chip as a light-emitting material. In the semiconductor, the excess energy is released through the recombination of carriers to cause photon emission, and directly emits red, yellow, blue, and green light. On this basis, using the principle of three primary colors, Adding fluorescent powder can emit light of any color. The lighting fixtures manufactured using LEDs as light sources are LED lamps. [0003] The LED manufacturing process is divided into epitaxy, chip front-end, chip back-end, packaging and other links. The epitaxy is sequentially deposited on the sapphire substrate through the metal-organic chemical vapor deposition process. structure, and th...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/12
CPCH01L33/007H01L33/12
Inventor 孙蕾蕾
Owner 江西通利晟电子科技有限公司