On-chip photon multi-stage switch based on Si-Ge2Sb2Te5 mixed waveguide

A si-ge2sb2te5, mixed wave technology, applied in the direction of optical waveguide light guide, optical waveguide coupling, light guide, etc., can solve the problems of large static power consumption, stability problems, small refractive index adjustment range, etc., to improve conversion efficiency, The effect of reducing energy consumption

Inactive Publication Date: 2020-06-09
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional optical switches are mainly based on the electro-optic effect and thermo-optic effect, which need to consume excess energy to maintain the state of the switch, and there is a large static power consumption
Traditional optical switches are very

Method used

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  • On-chip photon multi-stage switch based on Si-Ge2Sb2Te5 mixed waveguide
  • On-chip photon multi-stage switch based on Si-Ge2Sb2Te5 mixed waveguide
  • On-chip photon multi-stage switch based on Si-Ge2Sb2Te5 mixed waveguide

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Embodiment 1

[0036] Step 1, spin-coat the SOI substrate with electron beam photoresist, perform electron beam exposure, and form a rectangular waveguide and a grating structure at both ends by reactive ion etching;

[0037] Step 2, perform the second spin-coated electron beam photoresist and electron beam exposure, and form Ge by reactive ion etching 2 Sb 2 Te 5 , ITO sputtering window. Using a magnetron sputtering coater, plate 25nm thick Ge on the sputtering window 2 Sb 2 Te 5 and 10nm thick ITO;

[0038] Step 3, the prepared substrate is ultrasonically cleaned with acetone and alcohol in sequence, and then rinsed with deionized water to completely remove the photoresist;

[0039] Step 4, put the prepared substrate into image 3 in the working system;

[0040] Step 5, modulate the external picosecond laser, in the waveguide mixing area Si-Ge 2 Sb 2 Te 5 Focus on the picosecond laser. By adjusting the pumping energy of the laser and the continuous attenuation sheet to adjust t...

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Abstract

The invention discloses an on-chip photon multi-stage switch based on a Si-Ge2Sb2Te5 mixed waveguide, and belongs to the technical field of picosecond laser and continuous laser application. The on-chip photon multi-stage switch is based on a laser multi-pulse effect and an evanescent wave coupling theory. Amorphous Ge2Sb2Te5 is directly coupled with a single-mode Si waveguide, a Ge2Sb2Te5 thin film is deposited through a magnetron sputtering method, and different crystalline states of the Ge2Sb2Te5 are adjusted by adjusting the picosecond laser pulse number and pulse energy to achieve multi-stage switching operation. The on-chip photon multi-stage switch does not need to maintain the energy consumption of a traditional optical switch caused by the thermo-optic effect and the electro-opticeffect, and is a green device. In addition, the Ge2Sb2Te5 has different optical constants in different crystalline states, and the crystalline refractive index and extinction coefficient of the Ge2Sb2Te5 are higher than those of the Ge2Sb2Te5 in an amorphous state, so that the coupling capacity of a material to light and the absorption capacity of the material to the light are different, and multi-stage operation is further realized. The on-chip photon multi-stage switch can be widely applied to optical communication systems.

Description

technical field [0001] The invention relates to an optical component, which belongs to the technical field of picosecond laser and continuous laser application, in particular to a Si-Ge-based 2 Sb 2 Te 5 On-chip photonic multilevel switching of hybrid waveguides. Background technique [0002] Optical switch is an important part of optical communication network, and its switch selectivity is one of the important functions of optical network communication. Especially the integration of waveguide optical switches and other optical devices has attracted more and more attention. Traditional optical switches are mainly based on the electro-optic effect and thermo-optic effect, which need to consume excess energy to maintain the state of the switch, resulting in large static power consumption. Traditional optical switches are very sensitive to temperature changes, which leads to potential stability issues. Moreover, due to the limitation of the electro-optic effect and the the...

Claims

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Application Information

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IPC IPC(8): G02B6/35G02B6/12G02B6/124G02B6/136G02B6/132G02B6/13
CPCG02B6/12G02B6/124G02B6/13G02B6/132G02B6/136G02B6/35G02B2006/12035G02B2006/12061G02B2006/12145
Inventor 刘富荣李玉张永志韩钊陈清远孙腾
Owner BEIJING UNIV OF TECH
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