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Grinding wheel applied to cylindrical grinding of silicon carbide crystal bar and preparation method thereof

A silicon carbide crystal, rod outer circle technology, applied in grinding/polishing equipment, grinding devices, bonded grinding wheels, etc., can solve the problems of material removal rate and surface quality difficulty, high crystal growth cost, crystal rod fracture, etc. , to increase the self-sharpening, increase the consistency of grinding consumption, and increase the fluidity

Active Publication Date: 2021-10-12
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The application field of the above-mentioned silicon carbide crystal requires it to have an ultra-smooth, non-damaging, and high-quality surface. At the same time, the silicon carbide crystal has a hardness second only to diamond, and is brittle. High hardness and good chemical inertness make it Obtaining a high material removal rate and surface quality has brought great difficulties, and the cost of growing silicon carbide crystals is very high. Improper processing methods will cause surface damage, ingot breakage, and microcracks in silicon carbide crystals, etc. , directly causing the crystal to be scrapped
In view of the above factors, its application has been greatly limited

Method used

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  • Grinding wheel applied to cylindrical grinding of silicon carbide crystal bar and preparation method thereof
  • Grinding wheel applied to cylindrical grinding of silicon carbide crystal bar and preparation method thereof
  • Grinding wheel applied to cylindrical grinding of silicon carbide crystal bar and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] To make 1A1-400×30×127×5 cylindrical grinding wheels with a particle size of 80#, see figure 1 .

[0038] 1. Formula: According to the following table:

[0039] 1A1-400×30×127×5 Granularity 80# Cylindrical Grinding Coarse Grinding Wheel Formula

[0040]

[0041] Second, the production process

[0042] 2.1 Weigh the materials with the above formula ratio, the total weight is 4500g, and put them into the drum mixer. In order to make the physical mixing more uniform, put 450g steel paper clips into the mixer, mix for 2 hours, and pass through the 60# screen to get Molding material;

[0043]2.2 Put the above-mentioned mixture and the aluminum matrix of the corresponding size into the mold at the same time, heat and press on the hot press, the hot pressing temperature is 195°C, the pressure starts from 2Mpa, flatten the mold for 15 minutes, and keep it after flattening The pressure and temperature of flattening are 180 minutes, and the mold is unloaded to obtain the ...

Embodiment 2

[0046] Make 3A1-400×20×203×10×10 cylindrical grinding semi-finishing grinding wheels with a particle size of 180#, see figure 2 .

[0047] 1. Formula: According to the following table:

[0048] 3A1-400×20×203×10×10 Granularity 180# Cylindrical grinding semi-fine grinding wheel formula

[0049]

[0050] Second, the production process

[0051] 2.1 Weigh the materials with the above formula ratio, the total weight is 3500g, and put them into the drum mixer. In order to make the physical mixing more uniform, put 350g steel paper clips into the mixer, mix for 1.5 hours, and pass through the 100# screen to get Molding material;

[0052] 2.2 Put the above-mentioned mixture and the aluminum matrix of the corresponding size into the mold at the same time, heat and press on the hot press, the hot pressing temperature is 195°C, the pressure starts from 2Mpa, flatten the mold for 15 minutes, and keep it after flattening The pressure and temperature of flattening are 170 minutes, a...

Embodiment 3

[0055] To make 14A1-350×40×127×30×5 cylindrical grinding wheels with a particle size of 800#, see image 3 .

[0056] 1. Formula: According to the following table:

[0057] 14A1-350×40×127×30×5 Granularity 800# Cylindrical Grinding Grinding Wheel Formula

[0058]

[0059] Second, the production process

[0060] 2.1 Weigh the materials with the above formula ratio, with a total weight of 4000g, and put them into the drum mixer. In order to make the physical mixing more uniform, put 400g steel paper clips into the mixer, mix for 2.5 hours, and pass through the 140# screen to get Molding material;

[0061] 2.2 Put the above-mentioned mixture and the aluminum matrix of the corresponding size into the mold at the same time, heat and press on the hot press, the hot pressing temperature is 185°C, and the pressure starts from 2Mpa, flatten the mold for 15 minutes, and keep it after flattening The pressure and temperature of flattening are 240 minutes, and the mold is unloaded t...

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Abstract

The invention provides a grinding wheel applied to the cylindrical grinding of silicon carbide crystal rods and a preparation method thereof. The grinding layer of the grinding wheel comprises the following components in weight percentage: 15-25% of main abrasive, 10-15% of auxiliary abrasive, main adhesive Adhesive 25‑45%, auxiliary adhesive 5‑17.5%, carbon black 5‑10%, molybdenum disulfide 3‑8%, graphene 3.5‑7%, microcrystalline wax 1‑5%. According to the problems that silicon carbide crystals are prone to occur, the present invention forms the most optimal formula and molding by finding matching formula materials that are not commonly used in the superhard material grinding wheel industry, such as microcrystalline wax, graphene, modified phenolic resin, etc. Technology, invented a superhard diamond grinding wheel that can process silicon carbide crystals with high efficiency, and the finished finish is finally finely ground to achieve a mirror effect (Ra<0.1), and the grinding wheel does not need to be trimmed during the processing.

Description

technical field [0001] The invention relates to the field of superhard materials and precision grinding, in particular to a grinding wheel applied to the cylindrical grinding of silicon carbide crystal rods and a preparation method thereof. Background technique [0002] With the development of semiconductor materials and technologies, the application of silicon carbide crystals is becoming more and more extensive. Silicon carbide crystal has excellent electronic and chemical properties, good thermal conductivity, wide band gap, and its forbidden width is 3 times that of silicon, good thermal conductivity, thermal conductivity is 4-5 times that of silicon; breakdown voltage is 8 times that of silicon times, and high hardness, high temperature resistance. It can be widely used in high-voltage, high-temperature, high-power and high-frequency electronic fields, such as high-power devices, optoelectronic devices, microwave radio frequency devices, etc. [0003] The current flow...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D3/32B24D3/28B24D18/00B24D3/34B24D5/00
CPCB24D3/285B24D3/32B24D3/342B24D5/00B24D18/0009
Inventor 叶腾飞赵延军张高亮钱灌文王礼华左冬华
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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