Novel ferroelectric transistor and preparation method thereof

Abstract

The invention belongs to the field of transistors, and particularly discloses a novel ferroelectric transistor and a preparation method thereof. The novel ferroelectric transistor comprises a bottom gate, a bottom electrode, a channel layer, a ferroelectric dielectric layer and a top gate, wherein the bottom electrode is arranged above the bottom gate and serves as a source electrode and a drain electrode of the novel ferroelectric transistor, the channel layer is arranged above the bottom electrode and the bottom gate, the ferroelectric dielectric layer wraps the bottom electrode and the channel layer to complete packaging, and the top gate is arranged above the ferroelectric dielectric layer and partially or completely covers the channel layer. According to the novel ferroelectric transistor, the capacitive coupling effect of the top gate and the bottom gate is utilized, a polarization effect is generated on the top gate and the ferroelectric dielectric layer in a mode of applying voltage to the bottom gate, the voltage does not need to be applied through the top gate, a top gate electrode pin does not need to be reserved, and the complexity of a ferroelectric transistor integrated circuit is effectively reduced; and meanwhile, by adjusting the area of the top gate, the coupling strength of the top gate and the bottom gate can be changed, and charge doping of different strengths is realized.

Description

technical field [0001] The invention belongs to the field of transistors, and more specifically relates to a novel ferroelectric transistor and a preparation method thereof. Background technique [0002] Since Bell Laboratories in the United States successfully developed germanium-based transistors in 1947, transistors have successfully replaced electron tubes due to their small size and low power consumption, and have promoted the progress in the field of microelectronics. As a semiconductor device, transistors have extremely high response speed and accuracy to external influences (light, electricity, heat, etc.), and are widely used in the field of detectors. In addition, by virtue of the spontaneous polarization of ferroelectric materials under the action of an external electric field, nonvolatile electrostatic field doping can be generated in the two-dimensional material channel, and ferroelectric transistors are widely used in the field of nonvolatile memories. Ferroel...

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Problems solved by technology

[0004] Under the existing process conditions, there are room for improvement in these two device structures. For ferroelectric top-gate structure devices, CN110459546A discloses an integrated assembly with a ferroelectric transistor and a method for forming an integrated assembly. The structure is in When applied to arrayed integrated circuit packaging, it is necessary to reserve multiple pins for the top gate electrode of each device in the array, which increases the complexity of the circuit and is not conducive to the miniaturization of the circuit; while in the ferroelectric bottom gate structure, This structure does not need to reserve top gate electrode pins, which can effectively simplify the integrated circuit, but it can only conduct indiscriminate overall polarization of the entire device channel through the bottom gate, sacrificing the possibility of realizing multiple functions on the same device

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