Battery back silicon nitride film layer, PERC battery and preparation method

A front-side silicon nitride film and silicon nitride film technology, used in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high temperature requirements for the production process of the back film, low reflectivity of the battery back film, and low battery conversion efficiency. , to achieve the effect of improving the passivation effect, obvious advantages of current performance, and reducing the annealing time of the back film

Pending Publication Date: 2020-07-14
TONGWEI SOLAR (ANHUI) CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the problems in the prior art of low reflectance of the battery back film, low battery conversion efficiency, high temperature requirements for the back film manufacturing process, high energy consumption and high cost, the present invention provides a silicon nitride battery on the back of the battery Film layer, PERC battery and preparation method, which can improve the photoelectric conversion efficiency of the battery sheet and improve the performance of single crystal PERC battery products

Method used

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  • Battery back silicon nitride film layer, PERC battery and preparation method
  • Battery back silicon nitride film layer, PERC battery and preparation method
  • Battery back silicon nitride film layer, PERC battery and preparation method

Examples

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Embodiment 1

[0040] This embodiment takes P-type monocrystalline silicon as an example to describe the five-layer structure of its PERC solar cell back film and the corresponding low-temperature preparation method.

[0041] First of all, the battery structure of the present invention is as follows figure 1 As shown, the front side of the monocrystalline cell is coated with a front silicon nitride film layer to reduce reflection. It plays a protective role, and at the same time increases the reflectivity of the back, obtains a better passivated surface, and improves the conversion efficiency of the battery.

[0042] Table 1

[0043] Silicon nitride film on the back film thickness Refractive index level one 25nm±5nm 2.6±0.2 Second floor 10nm±5nm 2.1±0.1 the third floor 30nm±5nm 2.5±0.1 fourth floor 20nm±5nm 2.3±0.05 fifth floor 45nm±5nm 2.1±0.1

[0044] Such as figure 2 As shown, the silicon nitride film layer on the back side of ...

Embodiment 2

[0048] The five-layer structure battery with the back film described in Example 1, the specific manufacturing steps are as follows:

[0049] Step Ⅰ: Obtain pre-treated silicon wafers through texturing, diffusion, primary annealing, etching and secondary annealing operations;

[0050] a), cashmere:

[0051] Carry out isotropic etching with acid solution to obtain a surface structure with many pits on the surface, and at the same time play a good role in light trapping. Texture processing is carried out on monocrystalline silicon wafers to form a pyramid textured surface, so that the surface of the silicon wafer is formed uniformly. The pyramid-like structure enhances light absorption and improves the short-circuit current and conversion efficiency of the battery.

[0052] The reaction equation is: Si+4HNO 3 +6HF=H 2 SiF 6 +4NO 3 +4H 2 O.

[0053] b) Diffusion to prepare PN junction:

[0054] Surface phosphorus source propulsion, using thermal propulsion to form PN junct...

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Abstract

The invention discloses a battery back silicon nitride film layer, a PERC battery and a preparation method and belongs to the field of single crystal PERC battery manufacturing. In the prior art, a battery back film is low in reflectivity, and the conversion efficiency of a battery is slow meanwhile, the temperature requirement of a back film manufacturing process is high, and energy consumption and cost are high. The invention provides a PERC battery. The battery comprises a front silicon nitride film layer, a back aluminum oxide film layer and a back silicon nitride film layer; the back silicon nitride film layer is of a five-layer structure; when the battery is manufactured, a back aluminum oxide film layer, a front silicon nitride film layer and a back silicon nitride film layer are sequentially deposited; a low-temperature manufacturing process is used, so that the photoelectric conversion efficiency of a battery piece is improved, the performance of a single crystal PERC batteryproduct is improved, energy consumption in the manufacturing process is reduced, manufacturing time is shortened, and production efficiency is improved. The manufacturing method is suitable for wide application.

Description

technical field [0001] The invention relates to the field of monocrystalline PERC battery manufacturing, and more specifically, to a silicon nitride film layer on the back of the battery, a PERC battery and a preparation method. Background technique [0002] The current mainstream technology of crystalline silicon solar cells is PERC (Passivated Emitter Rear Cell) - emitter and rear passivation cell technology, which improves conversion efficiency by adding a dielectric passivation layer on the rear side of the cell. PERC cells implement passivation technology on the back of the cell to enhance the internal back reflection of light on the silicon base, reduce the back recombination, maximize the potential gradient across the P-N junction, make the flow of electrons more stable, and reduce electron recombination. The efficiency of PERC cells is effectively improved. [0003] Covering the back of the monocrystalline PREC cell with aluminum oxide and silicon nitride is the cor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/054H01L31/068H01L31/18H01L21/67
CPCH01L21/67248H01L21/67253H01L21/67276H01L31/02167H01L31/0682H01L31/1804H01L31/1868H01L31/0547Y02E10/52Y02E10/547Y02P70/50
Inventor 朱浩万柳斌吴朋朋张基勇蒋柱方雯
Owner TONGWEI SOLAR (ANHUI) CO LTD
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