Silicon heterojunction solar cell comprising silicon nitride antireflection layer and preparation method of layer
A silicon nitride reduction and silicon heterojunction technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems affecting the anti-reflection effect and low refractive index, so as to improve the photocurrent, reduce light reflection, and reduce reflection Effect
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[0026] Example 1
[0027] A method for preparing a silicon heterojunction solar cell containing a silicon nitride anti-reflection layer:
[0028] Step 1: Prepare n-type monocrystalline silicon wafers with industrial grade crystal orientation of (100), resistivity of 0.5-3Ω·cm, and thickness of 100-180μm n-type Cz monocrystalline silicon wafers as substrates, using potassium hydroxide solution Remove the surface damage layer formed by wire cutting;
[0029] Step 2: Use an alkaline solution to texturize the substrate obtained in step 1, and then perform standard RCA cleaning to obtain a pretreated silicon wafer;
[0030] Step 3: Put the silicon wafer obtained in step 2 into the vacuum chamber of PECVD, and the background vacuum in the vacuum chamber reaches 5×10 -4 After Pa, under the condition of silicon wafer substrate temperature 150~300℃, use H 2 And SiH 4 It is a reactive gas, the deposition pressure is 10-300Pa, and a layer of intrinsic amorphous film is grown on the front and bac...
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