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SIP series target material capable of avoiding stripping of anti-sputtering layer and application thereof

A technology of layer peeling and reverse sputtering, which is applied in the field of SIP series targets, can solve the problems of tip discharge, abnormal physical tip, and can not well alleviate the interface stress mismatch and stress concentration problems, so as to reduce the stress concentration factor , Reduce the risk of stripping, increase the risk of discharge and wafer scrap

Pending Publication Date: 2020-07-28
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] For the conventional SIP series targets in the prior art, the interface design between the cathode metal and the reverse sputtering layer cannot well alleviate the interface stress mismatch and stress concentration problems caused by the difference in thermal expansion coefficient. The risk of layer peeling; and the peeling of the anti-sputtering layer will produce abnormal physical tips, which will cause tip discharges, resulting in the failure of electrical tests of subsequent chips and the scrapping of silicon wafers

Method used

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  • SIP series target material capable of avoiding stripping of anti-sputtering layer and application thereof
  • SIP series target material capable of avoiding stripping of anti-sputtering layer and application thereof

Examples

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Comparison scheme
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Embodiment 1

[0034] The schematic diagram of the structure of the SIP series target in this embodiment is as follows figure 1 As shown, where 1 is the cathode metal, 2 is the back plate, and the radius R=8mm;

[0035] The composition and preparation method of the cathode material and the back plate material in the SIP series target in this embodiment are as follows:

[0036]Cathode metal material: 4N5 Ti (purity ≥ 99.995%);

[0037] Cathode metal shape: disk-shaped, with hypotenuse and R angle on the edge;

[0038] Cathode metal size: the overall outer diameter is 425mm, and the total height is 12.7mm;

[0039] Backplane material: Cu alloy;

[0040] Preparation process: Machining (ordinary car, numerical control) is used to process a circular arc transition on the edge of the cathode metal, with a radius R=8mm.

Embodiment 2

[0042] The difference from Embodiment 1 is that the radius R=10mm.

Embodiment 3

[0044] The difference from Embodiment 1 is that the radius R=12mm.

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Abstract

The invention relates to an SIP series target material capable of avoiding stripping of an anti-sputtering layer and application thereof. The SIP series target material comprises a cathode metal, wherein the chamfer radius R of the edge of the cathode metal is larger than or equal to 4mm. In the prior art, according to a conventional SIP series target material, the interface design between the cathode metal and the anti-sputtering layer cannot well alleviate the problems of interface stress mismatch and stress concentration caused by the difference of thermal expansion coefficients, and the risk of stripping of the anti-sputtering layer exists; and an abnormal physical tip is generated due to stripping of the anti-sputtering layer, so that tip discharge is caused, and the problems of subsequent chip electrical test failure and silicon chip scrapping are caused. The SIP series target material can effectively alleviate the stress mismatch and stress concentration situations between the cathode metal and the anti-sputtering layer, and can avoid the problems of stripping of the anti-sputtering layer and tip discharging of a plasma.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets for semiconductors, and in particular relates to a SIP series target which prevents peeling of a reverse sputtering layer and its application. Background technique [0002] During the measurement and control sputtering physical vapor deposition process, the back sputtering layer film is inevitably formed on the edge of the cathode metal target. Under normal process conditions, the thickness of the reverse sputtering layer of SIP series targets is usually about tens of microns; and under certain specific process parameters and chamber environments, the thickness of the reverse sputtering layer of SIP series targets can even reach more than 200 μm. [0003] The chemical composition of the back-sputtered layer is usually different from that of the cathode metal target, depending on the specific process parameters. For example, the SIP Ti target adopts the TiN process, and the reverse sput...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14
CPCC23C14/14C23C14/3407
Inventor 姚力军潘杰边逸军王学泽王少平
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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