Preparation method of metallic arsenic single crystal

A metal arsenic, single crystal technology, applied in the fields of metallurgical technology and material science and engineering, can solve the problems of complex surface structure and crystal structure, high oxidation risk, low economic value, etc. Mirror glossy effect on the surface
CN111455460AActive Publication Date: 2020-07-28CENT SOUTH UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CENT SOUTH UNIV
Publication Date
2020-07-28

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a preparation method of a metal arsenic single crystal. The preparation method comprises the following steps: in a closed container with oxygen content of less than 1 ppm and water content of less than 1ppm, mixing elemental arsenic and an iodine-containing hardening and tempering agent, carrying out reacting in a high-temperature reaction area, and condensing and crystallizing arsenic vapor generated by the reaction in a condensing and crystallizing area to obtain a metal arsenic single crystal, wherein the iodine-containing hardening and tempering agent is elemental iodine and / or arsenic triiodide. According to the invention, the iodine-containing hardening and tempering agent is added, so the surface structure of metal arsenic is adjusted in the crystallization process, the preferred growth of the metal arsenic is controlled, and the exposed growth crystal face structure of metal arsenic is mainly based on a (0001) crystal face family; and since crystal facesin the crystal face family have lower surface energy, lower oxidation tendency and oxidation degree is obtained, the oxidation resistance of the metal arsenic can be remarkably improved, and the useand storage capacity of the metal arsenic is improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the fields of metallurgical technology, material science and engineering, and relates to a method for preparing metal arsenic single crystal. Background technique

[0002] Arsenic is an inevitable by-product of the non-ferrous smelting industry. Proper disposal and recycling of arsenic resources can avoid secondary harm to the environment, which is conducive to the green and sustainable development of the non-ferrous industry and the protection of the ecological environment. At present, the main forms of arsenic-containing products in the non-ferrous smelting industry are white arsenic and metallic arsenic, among which metallic arsenic is the main raw material form for the high-tech application of materialization of arsenic resources. The process of preparing metal arsenic mainly adopts thermal reduction method, such as carbothermal reduction method and its improved method (Chinese patent ZL89101045.9, Chinese patent ZL 9211073...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More