Preparation method of metallic arsenic single crystal

Abstract

The invention discloses a preparation method of a metal arsenic single crystal. The preparation method comprises the following steps: in a closed container with oxygen content of less than 1 ppm and water content of less than 1ppm, mixing elemental arsenic and an iodine-containing hardening and tempering agent, carrying out reacting in a high-temperature reaction area, and condensing and crystallizing arsenic vapor generated by the reaction in a condensing and crystallizing area to obtain a metal arsenic single crystal, wherein the iodine-containing hardening and tempering agent is elemental iodine and / or arsenic triiodide. According to the invention, the iodine-containing hardening and tempering agent is added, so the surface structure of metal arsenic is adjusted in the crystallization process, the preferred growth of the metal arsenic is controlled, and the exposed growth crystal face structure of metal arsenic is mainly based on a (0001) crystal face family; and since crystal facesin the crystal face family have lower surface energy, lower oxidation tendency and oxidation degree is obtained, the oxidation resistance of the metal arsenic can be remarkably improved, and the useand storage capacity of the metal arsenic is improved.

Description

technical field [0001] The invention belongs to the fields of metallurgical technology, material science and engineering, and relates to a method for preparing metal arsenic single crystal. Background technique [0002] Arsenic is an inevitable by-product of the non-ferrous smelting industry. Proper disposal and recycling of arsenic resources can avoid secondary harm to the environment, which is conducive to the green and sustainable development of the non-ferrous industry and the protection of the ecological environment. At present, the main forms of arsenic-containing products in the non-ferrous smelting industry are white arsenic and metallic arsenic, among which metallic arsenic is the main raw material form for the high-tech application of materialization of arsenic resources. The process of preparing metal arsenic mainly adopts thermal reduction method, such as carbothermal reduction method and its improved method (Chinese patent ZL89101045.9, Chinese patent ZL 9211073...

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Problems solved by technology

The process of preparing metal arsenic mainly adopts thermal reduction method, such as carbothermal reduction method and its improved method (Chinese patent ZL89101045.9, Chinese patent ZL 92110735.8, Shandong Hengbang published patent (application number: 201911003123.X, publication number: CN 110747355A), Central South University published patent (application number: 201710186489.X, publication number: CN107043862A), etc.), hydrogen reduction method and its improved method (US Patent US 3657379), and preparation of metal arsenic block by wet reduction-hot pressing sintering method (application number: 201510992870.6, publication number CN 105506311A); however, the prepared metallic arsenic is metallic gray arsenic, with complex surface and crystal structures, high oxidation risk in subsequent storage and use, and can only be used as crude arsenic. Low economic value; Chen Guozhong and Yang Weidong developed a method for preparing ultra-high-purity arsenic single wafers (application number: 201210312574.3, publication number CN 102899712A), which uses ultra-high-purity raw materials to perform sublimation crystallization at 36atm at 817°C to form twin wafers , the method uses high temperature and high pressure, and requires high equipment

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