Laser welding layer prefabricated part and preparation methods for laser welding layer prefabricated part and aluminum silicon carbide box body

A technology of laser welding and silicon carbide box, which is applied in the direction of electrical components, electrical solid devices, semiconductor devices, etc., can solve problems such as cracking at the interface joint, shedding of gold coating, poor performance of laser welding of infiltrated aluminum silicon, etc., and achieve crystal grain The effect of small size and good mechanical properties

Active Publication Date: 2020-08-04
SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are mainly the following problems: (1) The oxide layer on the surface of silicon powder is thick, which makes the laser welding performance of infiltrated aluminum silicon poor; (2) The composition of the aluminum silicon layer is not uniform, resulting in large deformation of the box during the brazing process; (3) When the port of the box body passes through the aluminum-silicon layer, it is easy to cause cracking at the interface junction
However, aluminum silicon carbide has exposed silicon carbide particles, which can easily cause the gold coating to fall off

Method used

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  • Laser welding layer prefabricated part and preparation methods for laser welding layer prefabricated part and aluminum silicon carbide box body
  • Laser welding layer prefabricated part and preparation methods for laser welding layer prefabricated part and aluminum silicon carbide box body
  • Laser welding layer prefabricated part and preparation methods for laser welding layer prefabricated part and aluminum silicon carbide box body

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Embodiment 1

[0053] The aluminum silicon carbide box body structure of the band laser welding layer of the present invention is as follows figure 1 As shown, the laser welding layer 1 is located on the upper end of the aluminum silicon carbide layer 2; the two layers are macroscopically layered, and the microscopic layer is not layered, and there is a good metallurgical bond between the two layers. Wherein the laser welding layer 1 has a thickness of 2mm, and is composed of 6063 aluminum alloy powder and Zl102 aluminum alloy as a reinforcing phase, wherein the volume fraction of 6063 aluminum alloy powder is 60%, and the volume fraction of Zl102 aluminum alloy matrix is ​​40% %. The aluminum silicon carbide layer 2 is composed of silicon carbide particles and Zl102 aluminum alloy matrix, wherein the volume fraction of silicon carbide is 63%, and the volume fraction of Zl102 aluminum alloy is 37%.

[0054] A method for preparing an aluminum silicon carbide box body with a laser welding lay...

Embodiment 2

[0061] Aluminum silicon carbide box structure with laser welding layer such as figure 1 As shown, the thickness of the laser welding layer 1 is 1.8mm, which is composed of 3003 aluminum alloy powder and Zl101A aluminum alloy as the reinforcing phase, wherein the volume fraction of 3003 aluminum alloy powder is 55%, and the volume fraction of Zl101A aluminum alloy matrix 45%. The aluminum silicon carbide layer 2 is composed of silicon carbide particles and Zl101A aluminum alloy matrix, wherein the volume fraction of silicon carbide is 60%, and the volume fraction of Zl102 aluminum alloy is 40%.

[0062] A method for preparing an aluminum silicon carbide box body with a laser welding layer for electronic packaging, the specific steps are as follows:

[0063] 1) Prepare a laser welded layer preform. Weigh 3003 aluminum alloy particle powder 6 with a particle size of 100-150 μm, spread it on the bottom of the graphite mold die 5, apply a pressure of 1.5 MPa to the 3003 aluminum ...

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Abstract

The invention discloses a laser welding layer prefabricated part and preparation methods for the laser welding layer prefabricated part and an aluminum silicon carbide box body. The preparation methodfor the aluminum silicon carbide box body comprises the steps that 1, the laser welding layer prefabricated part is prepared; 2, the laser welding layer prefabricated part and a silicon carbide prefabricated part are laminated and matched; 3, an aluminum silicon carbide green body with the laser welding layer is prepared through vacuum air pressure infiltration; and 4, machining is carried out. The laser welding layer prefabricated part is formed by pressing particle-reinforced aluminum alloy powder, specifically, aluminum alloy powder is placed in a graphite mold, the graphite mold comprisesa female mold and a male mold, the aluminum alloy powder is laid at the bottom of the female mold, a hydraulic machine applies pressure of 0.5-2 MPa to the aluminum alloy powder in the female mold through the male mold and maintains the pressure to form the laser welding layer prefabricated part, wherein the particle size of the particle-reinforced aluminum alloy powder is 10-200 microns. A laserwelding layer is designed at the upper end of the aluminum silicon carbide box body, so that the laser welding problem between the aluminum silicon carbide box body and a cover plate is effectively solved, and the air tightness of the box body after sealing welding is ensured.

Description

technical field [0001] The invention relates to the field of laser welding electronic packaging, in particular to a laser welding layer prefabricated part and a preparation method thereof and an aluminum silicon carbide box body. Background technique [0002] With the rapid development of information technology, the integration level of IC chips continues to increase, making its power density increase day by day. Therefore, there is a need for more effective thermal management materials. However, traditional electronic packaging materials such as Kovar alloy, Inva alloy and W / Cu alloy cannot fully meet the material requirements of modern electronic packaging due to their high price, high density and low thermal conductivity. As a high volume fraction (60% ~ 75%) silicon carbide reinforced aluminum matrix composite material (hereinafter referred to as aluminum silicon carbide), due to its high thermal conductivity and elastic modulus, low density and suitable adjustable expa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/02B22D23/04H01L23/10
CPCB22F3/02B22D23/04H01L23/10
Inventor 高明起熊德赣肖静陈柯杨盛良束平何东
Owner SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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