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A kind of laser welding layer preform and preparation method thereof and aluminum silicon carbide box body

A technology of laser welding and silicon carbide box, which is applied in the direction of electrical components, electrical solid devices, semiconductor devices, etc., can solve problems such as cracking at the interface joint, peeling off of the gold coating, poor performance of laser welding of infiltrated aluminum silicon, etc., and achieve crystal grain The effect of small size and good mechanical properties

Active Publication Date: 2022-07-15
SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are mainly the following problems: (1) The oxide layer on the surface of silicon powder is thick, which makes the laser welding performance of infiltrated aluminum silicon poor; (2) The composition of the aluminum silicon layer is not uniform, resulting in large deformation of the box during the brazing process; (3) When the port of the box body passes through the aluminum-silicon layer, it is easy to cause cracking at the interface junction
However, aluminum silicon carbide has exposed silicon carbide particles, which can easily cause the gold coating to fall off

Method used

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  • A kind of laser welding layer preform and preparation method thereof and aluminum silicon carbide box body
  • A kind of laser welding layer preform and preparation method thereof and aluminum silicon carbide box body
  • A kind of laser welding layer preform and preparation method thereof and aluminum silicon carbide box body

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Embodiment 1

[0053] The structure of the aluminum silicon carbide box body with laser welding layer of the present invention is as follows: figure 1 As shown, the laser welding layer 1 is located on the upper end of the aluminum silicon carbide layer 2; the two are macroscopically layered, but not microscopically layered, and there is a good metallurgical bond between the two. The thickness of 1 of the laser welding layer is 2mm, and the reinforcing phase is 6063 aluminum alloy powder and the matrix is ​​Zl102 aluminum alloy. The volume fraction of 6063 aluminum alloy powder is 60%, and the volume fraction of Zl102 aluminum alloy matrix is ​​40%. %. The aluminum silicon carbide layer 2 is composed of silicon carbide particles and a Zl102 aluminum alloy matrix, wherein the volume fraction of silicon carbide is 63%, and the volume fraction of Zl102 aluminum alloy is 37%.

[0054] A preparation method of an aluminum silicon carbide box body with a laser welding layer for electronic packaging...

Embodiment 2

[0061] The structure of aluminum silicon carbide box with laser welding layer is as follows figure 1 As shown, the thickness of 1 of the laser welding layer is 1.8mm, which is composed of 3003 aluminum alloy powder as the reinforcing phase and Zl101A aluminum alloy as the matrix, wherein the volume fraction of the 3003 aluminum alloy powder is 55%, and the volume fraction of the Zl101A aluminum alloy matrix is ​​55%. 45%. The aluminum silicon carbide layer 2 is composed of silicon carbide particles and a Zl101A aluminum alloy matrix, wherein the volume fraction of silicon carbide is 60%, and the volume fraction of Zl102 aluminum alloy is 40%.

[0062] A preparation method of an aluminum silicon carbide box body with a laser welding layer for electronic packaging, the specific steps are as follows:

[0063] 1) Preparation of laser welded layer preforms. Weigh the 3003 aluminum alloy powder 6 with a particle size of 100 to 150 μm, and spread it on the bottom of the graphite mo...

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Abstract

The invention discloses a laser welding layer preform and a method for preparing the same and an aluminum silicon carbide box body, comprising steps 1: preparing a laser welding layer preform; step 2: laminating and matching the laser welding layer preform and the silicon carbide preform ; Step 3: vacuum pressure infiltration to prepare an aluminum silicon carbide body with a laser welding layer; Step 4: perform mechanical processing; the laser welding layer preform is pressed from particle-reinforced aluminum alloy powder, specifically the The aluminum alloy powder is placed in a graphite mold, and the graphite mold includes a concave mold and a convex mold, the aluminum alloy powder is spread on the bottom of the concave mold, and the hydraulic press applies 0.5-2MPa to the aluminum alloy powder in the concave mold through the convex mold. The particle size of the particle-enhanced aluminum alloy powder is 10-200 μm, and the laser welding layer is designed on the upper end of the aluminum silicon carbide box to effectively solve the problem of aluminum carbonization. The laser welding problem between the silicon box body and the cover plate ensures the airtightness of the box body after sealing and welding.

Description

technical field [0001] The invention relates to the field of laser welding electronic packaging, in particular to a laser welding layer preform and a preparation method of the aluminum silicon carbide box body. Background technique [0002] With the rapid development of information technology, the integration of IC chips has been continuously improved, resulting in an increasing power density. Therefore, more efficient thermal management materials are needed. However, traditional electronic packaging materials such as Kovar alloy, Inva alloy and W / Cu alloy cannot fully meet the material requirements of modern electronic packaging due to their high price, high density and low thermal conductivity. As a high volume fraction (60% ~ 75%) silicon carbide reinforced aluminum matrix composite material (hereinafter referred to as aluminum silicon carbide), due to its high thermal conductivity and elastic modulus, low density and suitable adjustable expansion coefficient, it is Wid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/02B22D23/04H01L23/10
CPCB22F3/02B22D23/04H01L23/10
Inventor 高明起熊德赣肖静陈柯杨盛良束平何东
Owner SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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