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Opposite impact test circuit for SiC MMC valve section and control method, system and equipment of opposite impact test circuit

A technology of test circuit and control method, applied in the field of inverter, to achieve the effect of reducing investment cost and investment

Active Publication Date: 2020-08-07
ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a circuit for the hedging test of the SiC MMC valve section and its control method, system, and equipment, which are used to solve the problem that the existing equivalent method of the hedging test of the SiC MMC requires a higher voltage level. DC power supply, technical issues requiring additional charging circuits

Method used

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  • Opposite impact test circuit for SiC MMC valve section and control method, system and equipment of opposite impact test circuit
  • Opposite impact test circuit for SiC MMC valve section and control method, system and equipment of opposite impact test circuit
  • Opposite impact test circuit for SiC MMC valve section and control method, system and equipment of opposite impact test circuit

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Experimental program
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Embodiment 1

[0062] figure 1 It is a circuit frame diagram for the SiC MMC valve segment hedging test circuit described in the embodiment of the present invention.

[0063] Such as figure 1 As shown, the embodiment of the present invention provides a kind of hedging test circuit for SiC MMC valve section, including DC power supply V dc , Isolation switch K 0 , the first current limiting resistor R 1 , the first MMC valve section and the second MMC valve section connected with the first MMC valve section, a load reactor L and a second current limiting resistor R are also connected between the first MMC valve section and the second MMC valve section 2 ; DC power supply V dc The positive pole and the isolating switch K 0 The first end of the connection, the disconnector K 0 The second terminal of the first current limiting resistor R 1 The first terminal is connected, the first current limiting resistor R 1 The second end of the second end is connected to the input end of the first MM...

Embodiment 2

[0079] Figure 4 It is a flow chart of the steps of the control method for the SiC MMC valve section hedging test circuit described in the embodiment of the present invention, Figure 5 It is the current waveform diagram of the load reactor used in the control method of the SiC MMC valve segment hedging test circuit described in the embodiment of the present invention.

[0080] Such as Figure 4 As shown, based on the above-mentioned hedging test circuit for SiC MMC valve section, the embodiment of the present invention also provides a control method for SiC MMC valve section hedging test circuit, when the first MMC valve section and the second After all the half-bridge sub-modules in the MMC valve section are charged, the control method includes the following steps:

[0081] S1. Obtain the phase difference between the first MMC valve section and the second MMC valve section, the modulation ratio of the first MMC valve section, the sum of the voltages of all half-bridge sub-...

Embodiment 3

[0114] Figure 6 It is a frame diagram of the control system for the SiC MMC valve segment hedging test circuit described in the embodiment of the present invention.

[0115] Such as Figure 6 As shown, the embodiment of the present invention provides a control system for the hedging test circuit of the SiC MMC valve section. The control system includes a data acquisition unit 10, a calculation unit 20 and a control unit 30;

[0116] The data acquisition unit 10 is used to acquire the phase difference between the first MMC valve section and the second MMC valve section, the modulation ratio of the first MMC valve section, and the sum of the voltages of all half-bridge sub-modules in the first MMC valve section , the modulation ratio of the second MMC valve section and the sum of the voltages of all half-bridge sub-modules in the second MMC valve section;

[0117] The calculation unit 20 is used to obtain the AC component of the load reactor and the DC component of the load ...

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Abstract

The embodiment of the invention relates to an opposite impact test circuit for a SiC MMC valve section and a control method, system and device of the SiC MMC valve section. The test circuit comprisesa direct-current power supply, an isolating switch, a first current-limiting resistor, a first MMC valve section and a second MMC valve section connected with the first MMC valve section, and a loadreactor and a second current-limiting resistor are further connected between the first MMC valve section and the second MMC valve section; the first MMC valve section and the second MMC valve sectionare provided with sub-module capacitors respectively. Through the direct current power supply and the sub-module capacitor, when the test circuit performs an opposite impact test, a direct-current energy supplementing power supply with a relatively high voltage level and an additional pre-charging device are not needed, so that the investment cost of test equipment is reduced, and the technical problems that the direct-current energy supplementing power supply with a relatively high voltage level is required and an additional charging loop is needed in an existing hedging test equivalent meanstest method for the MMC of SiC are solved.

Description

technical field [0001] The invention relates to the technical field of converters, in particular to a circuit for a SiC MMC valve section hedging test and a control method, system and equipment thereof. Background technique [0002] The modular multi-level converter (MMC) has the advantages of modular structure, easy installation and expansion, low loss, low switching frequency, and no AC filter. It has greatly promoted the development of HVDC (High Voltage Direct Voltage, HVDC) technology. [0003] Wide bandgap semiconductor devices made of silicon carbide (SiC) and other materials have the characteristics of high junction temperature, high blocking voltage, high switching frequency, etc., which make silicon-based devices have incomparable advantages in high frequency and high power density applications. It can effectively solve the problem of occupied area and loss of MMC made of silicon carbide (SiC) material (abbreviated as MMC of SiC). [0004] In the flexible direct ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00H02M1/32H02M7/483
CPCG01R31/00H02M7/483H02M1/32H02M7/4835Y02B70/10
Inventor 喻松涛李巍巍许树楷李岩韦甜柳何智鹏
Owner ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD