Low-temperature normal-pressure sintering preparation method of mass-producible high-purity SiC ceramic coating

A low-temperature, normal-pressure, ceramic coating technology, which is applied in the field of low-temperature and normal-pressure sintering preparation of high-purity SiC ceramic coatings, can solve problems such as the inability to guarantee the purity of SiC ceramic materials, harsh preparation conditions, and high production costs, and achieve controllable Sexuality, good combination, low cost effect

Active Publication Date: 2020-08-11
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the sintering of high-purity SiC, liquid-phase sintering will introduce more metal impurities, and there will be 5% or more free Si in reaction sintering, which cannot guarantee the purity of SiC ceramic materials. The hot-pressing sintering temperature is greater than 1750°C , the required pressure varies, usually requires high equipment, harsh preparation conditions, and high industrial production costs

Method used

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  • Low-temperature normal-pressure sintering preparation method of mass-producible high-purity SiC ceramic coating
  • Low-temperature normal-pressure sintering preparation method of mass-producible high-purity SiC ceramic coating
  • Low-temperature normal-pressure sintering preparation method of mass-producible high-purity SiC ceramic coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1: Use high-purity SiC powder with a purity ≥ 99% and a particle size of 500nm as a raw material, dissolve it in ethanol and butanone with a mixing ratio of 1:1, add triethyl phosphate with a mass fraction of 2%, and then transfer it to a ball mill tank, After milling with agate balls for 8 to 12 hours, continue to add polyvinyl butyral with a mass fraction of 3%, glycerol and dioctyl phthalate with a mass fraction of 3%, and a mixing ratio of 1:1, with a mass fraction of 5% High-purity Si powder and boron carbide powder with a mass fraction of 2% were ball milled for 8 to 12 hours.

[0033] Step 2: Apply the high-purity SiC slurry formed in Step 1 evenly on the surface of the reaction sintered SiC substrate, and dry at room temperature to form a pre-coating layer.

[0034] Step 3: Sinter the pre-coating layer obtained in step 2 under an inert atmosphere at a heating rate of 2.5° C. / min, a sintering temperature of 1750° C. to 1800° C., keep the temperature for 2 to...

Embodiment 2

[0036] Step 1: Use high-purity SiC powder with a purity ≥ 99% and a particle size of 3-5 μm as a raw material, dissolve it in ethanol and methyl ethyl ketone with a mixing ratio of 1:1, add 2% triethyl phosphate by mass fraction, and transfer to a ball mill tank, after milling with agate balls for 8-12 hours, continue to add polyvinyl butyral with a mass fraction of 3%, glycerol and dioctyl phthalate with a mass fraction of 3%, and a mixing ratio of 1:1. 5% high-purity Si powder, 2% boron carbide powder by mass fraction, followed by ball milling for 8-12 hours.

[0037] Step 2: Apply the high-purity SiC slurry formed in Step 1 evenly on the surface of the reaction sintered SiC substrate, and dry at room temperature to form a pre-coating layer.

[0038] Step 3: Sinter the pre-coating layer obtained in step 2 under an inert atmosphere at a heating rate of 2.5° C. / min, a sintering temperature of 1750° C. to 1800° C., keep the temperature for 2 to 3 hours, and then cool down natural...

Embodiment 3

[0040] Step 1: Use high-purity SiC powder with a purity ≥ 99% and a particle size of 500nm as raw material, add 5% high-purity SiC whiskers, dissolve in ethanol and butanone with a mixing ratio of 1:1, and add 2% phosphoric acid by mass fraction Triethyl ester is then transferred to a ball mill tank, and after ball milling with agate balls for 8 to 12 hours, continue to add polyvinyl butyral with a mass fraction of 3%, glycerol and o-phthalic acid with a mass fraction of 3%, and a mixing ratio of 1:1. Dioctyl diformate, high-purity Si powder with a mass fraction of 5%, and boron carbide powder with a mass fraction of 2%, followed by ball milling for 8 to 12 hours.

[0041] Step 2: Apply the high-purity SiC slurry formed in Step 1 evenly on the surface of the reaction sintered SiC substrate, and dry at room temperature to form a pre-coating layer.

[0042] Step 3: Sinter the pre-coating layer obtained in step 2 under an inert atmosphere at a heating rate of 2.5° C. / min, a sinte...

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Abstract

The invention relates to a low-temperature normal-pressure sintering preparation method of a mass-producible high-purity SiC ceramic coating, which is applied to the fields needing high-temperature resistance, oxidation resistance, corrosion resistance and other protective properties in the form of coatings. The preparation method is technically characterized by comprising the following steps: preparing high-purity SiC slurry, carrying out brush-coating, and carrying out low-temperature pressureless sintering. According to the technical scheme provided by the invention, the purity and the sintering temperature of the SiC coating are controlled by regulating and controlling the formula of the high-purity SiC slurry, so that normal-pressure sintering and industrial preparation and productionof the high-purity SiC coating at the temperature of 1750-1800 DEG C are realized. The high-purity SiC slurry formula and the brush-coating and sintering processes are flexible and controllable, thecoating and the matrix are well combined, obvious peeling and cracks are avoided, the technological process is easy to operate and short in consumed time, and the cost is greatly reduced.

Description

technical field [0001] The invention belongs to the field of silicon carbide (SiC) ceramic materials, and relates to a method for preparing mass-produced high-purity SiC ceramic coatings by sintering at low temperature and normal pressure. Background technique [0002] SiC ceramics are widely used in aerospace, aviation, microelectronics, automobiles, lasers, mining and fields of atomic energy. The high-purity SiC coating plays an important role in high temperature protection, oxidation resistance and corrosion resistance in these fields. The higher the purity of the SiC coating, the smaller the pollution caused by impurities and the better the protection performance under extremely severe working conditions. excellent. At present, the preparation and use of low-cost industrialized high-purity SiC ceramic coatings in China is still in the exploratory stage. The main problems are complicated preparation process, expensive equipment, high sintering temperature of SiC coating...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/577C04B35/622C04B35/64
CPCC04B35/565C04B35/62222C04B35/64C04B2235/428C04B2235/5445C04B2235/3821C04B2235/658C04B2235/6562C04B2235/6567C04B2235/668C04B2235/9684C04B2235/9669Y02E30/30
Inventor 梅辉赵钰常鹏成来飞
Owner NORTHWESTERN POLYTECHNICAL UNIV
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