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A kind of all-oxide flexible photodetector and its preparation method and application

A photodetector and oxide technology, applied in the field of microelectronics, can solve the problems of inability to realize large-area uniform preparation of flexible substrates, slow time response of ultraviolet photodetectors, and complicated preparation process, and achieve excellent ultraviolet photoelectric response performance, Zero power consumption, long-term stability and good repeatability

Active Publication Date: 2022-02-15
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some researchers have proposed that a variety of semiconductor materials can be used in the field of ultraviolet (UV) detection. The preparation of a flexible photodetector with a P-N junction structure may be a solution to the above problems. For example, NiO is used as a P-type semiconductor in the prior art to construct a A P-NiO / N-ZnO:Al heterojunction UV photodetector, but the inventors found that the NiO layer is prepared by spin coating and needs to be annealed at high temperature, so it cannot be realized on a flexible substrate with a large area uniform preparation
In the prior art, a UV photodetector with a Cu / CuI / ZnO structure has also been constructed, but the inventors found that the preparation process is very complicated, requiring the use of highly corrosive elemental iodine, and the preparation process requires a multi-step chemical process. Environmental friendliness is poor
In addition, the time response of Cu / CuI / ZnO structure ultraviolet photodetector is very slow, and its applicability is poor.

Method used

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  • A kind of all-oxide flexible photodetector and its preparation method and application
  • A kind of all-oxide flexible photodetector and its preparation method and application
  • A kind of all-oxide flexible photodetector and its preparation method and application

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preparation example Construction

[0040] The present invention also provides a method for preparing an all-oxide flexible photodetector, comprising the following steps:

[0041] (1) Cut the flexible substrate into a square of 2cm×2cm, and clean the cut substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for ultrasonication. 2 blow dry;

[0042] (2) Place the flexible substrate on the sample holder of the evaporation table, and fix the metal hard mask on the flexible substrate with a pressing pin. Put the sample holder into the growth chamber of the evaporation table, vacuumize the chamber, turn on the evaporation power supply, slowly increase the heating current of the evaporation power supply, conduct conductive electrode array deposition, and then take out the flexible substrate deposited with the conductive electrode array for use;

[0043] (3)SrCoO x Preparation of the thin film: transfer the flexible substrate deposited with the conductive electrode...

Embodiment 1

[0056] (1) Cut the flexible substrate into a square of 2cm×2cm, and clean the cut substrate. The cleaning process is as follows: Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, take it out, and dry it with N 2 blow dry;

[0057] (2) Place the flexible substrate on the sample holder of the evaporation table, and fix the metal hard mask on the flexible substrate with a pressing pin. Put the sample holder into the sample cavity of the evaporation table, and vacuum the cavity until the pressure is less than 5×10 -4 Pa; turn on the Au evaporation power supply, slowly increase the heating current to 11.7A, and the deposition rate is The thickness of the deposited Au thin film electrode is 20nm, and the flexible substrate is taken out for use;

[0058] (3)SrCoO x Film preparation: Transfer the flexible substrate deposited with Au thin film electrodes to the sample stage of the pulsed laser sputtering deposition system, and put the sample stage into th...

Embodiment 2

[0067] (1) Cut the flexible substrate into a square of 2cm×2cm, and clean the cut substrate. The cleaning process is as follows: Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, take it out, and dry it with N 2 blow dry;

[0068] (2) Place the flexible substrate on the sample holder of the evaporation table, and fix the metal hard mask on the flexible substrate with a pressing pin. Put the sample holder into the sample cavity of the evaporation table, and vacuum the cavity until the pressure is less than 5×10 -4 Pa; turn on the Ag evaporation power supply, slowly increase the heating current to 10.5A, and the deposition rate is The thickness of the deposited Ag thin film electrode is 40nm, and the flexible substrate is taken out for use;

[0069] (3)SrCoO x Film preparation: Transfer the flexible substrate deposited with Ag thin film electrodes to the sample stage of the laser sputtering deposition system, and put the sample stage into the growt...

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Abstract

The invention provides an all-oxide flexible photodetector as well as a preparation method and application thereof. In the present invention, the conductive electrode array, SrCoO x Thin films, ZnO thin films, and conductive electrode arrays were sequentially deposited on a flexible substrate, and a flexible ultraviolet (UV) photodetector of the all-oxide ZnO / SrCoOx inorganic thin film heterojunction type was constructed. Light has high responsivity and extremely fast response speed, and has the advantages of zero power consumption and stable performance, and has broad application prospects in the fields of wearable devices, ultraviolet imaging and ultraviolet detection.

Description

technical field [0001] The invention relates to the field of microelectronics technology, in particular to a flexible ultraviolet (UV) photodetector of a full oxide ZnO / SrCoOx inorganic thin film heterojunction type, a preparation method and an application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Semiconductor-based photodetectors are widely used in communication, automation control, sensor monitoring, ray detection and other fields, and have important economic and social values. To meet the growing demand for portable and lightweight optoelectronic devices, flexible and self-powered ultraviolet (UV) photodetectors have attracted increasing attention in re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0336H01L31/0224H01L31/109H01L31/18G01J1/42
CPCH01L31/0336H01L31/109H01L31/022408H01L31/18G01J1/429Y02P70/50
Inventor 陈延学魏琳颜世申王东邢若飞田玉峰刘国磊柏利慧
Owner SHANDONG UNIV