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Semiconductor device and method for manufacturing the same, and electronic equipment having semiconductor device

A technology of semiconductors and devices, applied in the field of semiconductor devices and their manufacturing, and electronic equipment with the semiconductor devices, can solve problems that hinder the miniaturization of radio frequency front-ends

Active Publication Date: 2022-07-12
ROFS MICROSYST TIANJIN CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional bulk acoustic wave filter based on polycrystalline aluminum nitride piezoelectric material and the surface acoustic wave filter based on single crystal lithium niobate piezoelectric material use different piezoelectric materials, structures and corresponding manufacturing processes, so , it is impossible to process two kinds of filters on one chip at the same time, which hinders the development of further miniaturization of RF front-end

Method used

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  • Semiconductor device and method for manufacturing the same, and electronic equipment having semiconductor device
  • Semiconductor device and method for manufacturing the same, and electronic equipment having semiconductor device
  • Semiconductor device and method for manufacturing the same, and electronic equipment having semiconductor device

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Embodiment Construction

[0023] The technical solutions of the present invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, and should not be construed as a limitation of the present invention.

[0024] In the present invention, the piezoelectric layer material, based on different resonators, can be aluminum nitride (AlN), doped aluminum nitride (doped ALN), zinc oxide (ZnO), lead zirconate titanate (PZT), niobium Lithium Oxide (LiNbO 3 ), quartz (Quartz), potassium niobate (KNbO 3 ) or lithium tantalate (LiTaO 3 ) and other materials, wherein the doped ALN contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr) , neodymium (Nd), promethium (...

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Abstract

The present invention relates to a semiconductor device comprising: a substrate having first and second sides opposite in a thickness direction of the substrate; a first group of resonator units disposed on the first side of the substrate; and a second group of resonators The unit is disposed on the second side of the substrate, wherein: each group of resonator units has at least one resonator unit, and at least one group of the first group of resonator units and the second group of resonator units is a bulk acoustic wave resonator unit. The present invention also relates to a method for manufacturing the above-mentioned semiconductor device and an electronic apparatus having the above-mentioned semiconductor device.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a semiconductor device and a method for manufacturing the same, and an electronic device having the semiconductor device. Background technique [0002] Bulk acoustic wave resonators and surface acoustic wave resonators are widely used in electronic devices such as filters. In existing bulk acoustic wave or surface acoustic wave filter designs or products, the corresponding resonator units (including electrical structures such as piezoelectric layers and electrodes) are only provided on one side of the substrate. As the miniaturization trend of the RF front-end becomes more and more severe, the filter structure with resonators arranged on one side is not conducive to further reduction of the filter size. [0003] On the other hand, BAW filters and SAW filters have their own advantages. For example, BAW filters perform better at high frequencies, while SAW ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/047H01L41/09H01L41/293H01L27/20H10N30/87H10N30/063H10N30/20H10N30/853H10N39/00
CPCH10N39/00H10N30/871H10N30/2047H10N30/063H03H9/0547
Inventor 庞慰杨清瑞张孟伦
Owner ROFS MICROSYST TIANJIN CO LTD