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Solar cell and manufacturing method thereof

A technology for solar cells and manufacturing methods, applied in the field of solar cells, capable of solving problems such as solar cell efficiency loss, solar cell efficiency reduction, and sunlight transmittance reduction, so as to improve photoelectric conversion efficiency, improve photoelectric conversion efficiency, and increase photoelectric efficiency Effect

Pending Publication Date: 2020-08-25
上海祖强能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, since the optical bandgap of the cadmium sulfide layer is 2.4 eV (2.4 electron volts), that is, light with energy greater than 2.4 electron volts in sunlight, that is, sunlight with a wavelength of 380-500 nm will be seriously absorbed by the cadmium sulfide layer, and It cannot enter the light absorbing layer that can generate electricity, resulting in the loss of solar cell efficiency; in addition, the use of cadmium sulfide layer as a buffer layer has poor interlayer bonding effect with the window layer containing boron-doped zinc oxide film layer, which reduces the sunlight transmittance , leading to a decrease in the efficiency of the solar cell

Method used

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  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof

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Experimental program
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Embodiment 1

[0057] like figure 1 As shown, a solar cell proposed by an embodiment of the present invention includes: a substrate 1, a bottom electrode layer 2, a light absorbing layer 3, a buffer layer 4, and a front electrode layer 6; the bottom electrode layer 2 is arranged on the substrate 1 The light-absorbing layer 3 is arranged on the bottom electrode layer 2; the buffer layer 4 includes a Zn (S, O) film layer, and the buffer layer 4 is prepared on the light-absorbing layer 3; the front electrode layer 6 includes a boron-doped zinc oxide film layer 6, The boron-doped zinc oxide film layer 6 is stacked on the buffer layer 4 .

[0058] Specifically, the substrate 1 can be a substrate of various properties, for example, a transparent substrate, a translucent substrate or an opaque substrate can be selected according to the light transmission; a glass substrate, a metal substrate, a polymer substrate or a ceramic substrate can be selected according to the material selection. Substrate;...

Embodiment 2

[0070] like image 3 As shown, a solar cell manufacturing method proposed in Embodiment 2 of the present invention includes:

[0071] 201. Prepare a bottom electrode layer on a substrate.

[0072] Specifically, the substrates of the solar cells provided in the embodiments of the present invention can use various substrates provided in the above-mentioned embodiments, that is, they can be selected according to specific usage requirements. The method of preparing the bottom electrode layer on the substrate can be through various means such as evaporation, deposition or sputtering, and can also be selected according to the specific process, quality and use requirements, and the bottom electrode layer can be a molybdenum bottom electrode layer.

[0073] 202. Prepare a light absorbing layer on the surface of the bottom electrode layer.

[0074] Specifically, the light absorbing layer can use copper indium gallium selenide film layer (CIGS), copper indium selenide film layer (CuIn...

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Abstract

The invention relates to a solar cell and a manufacturing method thereof, which relate to the technical field of solar cells. According to the main technical scheme, the solar cell comprises a bottomelectrode layer, a light absorption layer, a buffer layer and a front electrode layer which are sequentially stacked on the surface of one side of a substrate, wherein the buffer layer comprises a Zn(S, O) film layer; and the front electrode layer comprises a boron-doped zinc oxide film layer. According to the solar cell provided by the embodiment of the invention, the buffer layer is a Zn (S, O)film layer, the optical band gap is wider than the optical band gap of the cadmium sulfide layer, so that more solar energy, especially sunlight with the wavelength of 380-500 nm, can penetrate, theamount of sunlight entering the light absorption layer is increased, the photoelectric conversion efficiency of the solar cell is effectively improved, and the solar cell is more practical.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell and a manufacturing method thereof. Background technique [0002] A solar cell is a power generating element that converts light energy of sunlight into electrical energy. Among them, thin-film solar cells have the characteristics of stable performance, strong radiation resistance, and high photoelectric conversion efficiency, so thin-film solar cells are being used more and more. [0003] In the prior art, the structure of a thin film solar cell includes a light absorbing layer, a buffer layer and a window layer arranged on a substrate, wherein the buffer layer adopts a cadmium sulfide layer (CdS). [0004] However, since the optical bandgap of the cadmium sulfide layer is 2.4 eV (2.4 electron volts), that is, light with energy greater than 2.4 electron volts in sunlight, that is, sunlight with a wavelength of 380-500 nm will be seriously absorbed by the cadmiu...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0224H01L31/0392H01L31/18
CPCH01L31/022425H01L31/02167H01L31/0392H01L31/18Y02E10/50Y02P70/50
Inventor 辛科杨立红
Owner 上海祖强能源有限公司