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Silicon nitride substrate material prepared based on hot -pressing sintering method

A silicon nitride-based, hot-pressing sintering technology, applied in the field of ceramic materials, can solve the problems of ceramic substrate quality degradation and other problems, and achieve the effects of high density, good breakdown resistance and high thermal conductivity

Pending Publication Date: 2020-09-04
浙江锐克特种陶瓷有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this scheme, by using binary composite sintering or even multi-component composite sintering with more than three components, more impurities will be introduced during the sintering process, which will eventually lead to a decline in the quality of the ceramic substrate.

Method used

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  • Silicon nitride substrate material prepared based on hot -pressing sintering method
  • Silicon nitride substrate material prepared based on hot -pressing sintering method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 90 parts of silicon nitride (Si 3 N 4 ), 8 parts magnesium silicon nitride (MgSiN 2 ), 2 parts of yttrium oxide (Y 2 o 3 ) and mix evenly, add solvent absolute ethanol, stir and grind for 40 hours to obtain a mixed slurry, dry the mixed slurry at 100°C, and pass through a 40-mesh sieve to obtain a silicon nitride substrate material formula powder, the silicon nitride substrate material After the formula powder is dry-pressed, under a high-purity nitrogen atmosphere, the purity of the high-purity nitrogen is 99.999%, and the silicon nitride substrate material is obtained by hot-pressing and sintering at 1700° C. for 3 hours under a pressure of 20 MPa.

Embodiment 2

[0022] 96 parts of silicon nitride (Si 3 N 4 ), 3 parts magnesium silicon nitride (MgSiN 2 ), 1 part of yttrium oxide (Y 2 o 3 ) mixed evenly, adding solvent absolute ethanol, stirring and grinding for 60 hours to obtain a mixed slurry, the mixed slurry was dried at 120°C, and passed through a 200-mesh sieve to obtain a silicon nitride substrate material formula powder, the silicon nitride substrate material After the formula powder is dry-pressed, under a high-purity nitrogen atmosphere, the purity of the high-purity nitrogen is 99.999%, and the silicon nitride substrate material is obtained by hot-pressing and sintering at 1850° C. for 1 hour under a pressure of 45 MPa.

Embodiment 3

[0024] 96 parts of silicon nitride (Si 3 N 4 ), 2.5 parts magnesium silicon nitride (MgSiN 2 ), 1.5 parts of ytterbium oxide (Yb 2 o 3) mixed evenly, adding the solvent absolute ethanol and stirring and grinding for 60 hours to obtain a mixed slurry. The mixed slurry was dried at 120°C and passed through a 200-mesh sieve to obtain a silicon nitride substrate material formula powder. The silicon nitride substrate material After the formula powder is dry-pressed, under a high-purity nitrogen atmosphere, the purity of the high-purity nitrogen is 99.999%, and the silicon nitride substrate material is obtained by hot-pressing and sintering at 1800°C for 2 hours under a pressure of 45MPa.

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Abstract

The invention discloses a silicon nitride substrate material prepared based on a hot- pressing sintering method. The silicon nitride substrate material prepared based on the hot-pressing sintering method is prepared by the following steps: taking silicon nitride (Si3N4), silicon magnesium nitride (MgSiN2) and a sintering aid as raw materials; the silicon nitride substrate material prepared based on the hot-pressing sintering method is prepared by the following steps: uniformly mixing the silicon nitride (Si3N4), the silicon magnesium nitride (MgSiN2) and the sintering aid; adding solvent absolute ethyl alcohol and stirring and grinding for 40 to 60 hours to obtain uniformly mixed slurry; drying the mixed slurry at the temperature of 100-120 DEG C and sieving through a 40-200-mesh sieve toobtain silicon nitride substrate formula powder, performing dry pressing forming on the silicon nitride substrate formula powder, and performing hot-pressing sintering for 1-3 h at the temperature of1700-1850 DEG C under the pressure of 20-45 MPa in an inert or a reducing atmosphere to obtain the silicon nitride substrate. Compared with the prior art, by optimizing the formula and technological parameters, the size of silicon nitride grains and the thickness of grain boundaries are effectively controlled, and finally the high-strength and high-thermal-conductivity silicon nitride substrate material which can be widely applied to the field of dynamic IGBTs is obtained.

Description

technical field [0001] The invention belongs to the technical field of ceramic materials, in particular to a silicon nitride substrate material prepared based on a hot pressing sintering method. Background technique [0002] At present, automobiles, high-speed rails, airplanes, and ships are all developing towards electric drives. To control and drive motors is to use IGBT (Insulated Gate Bipolar Transistor)-insulated gate bipolar transistor composite full-control voltage-driven power semiconductor devices. The advantages of IGBT are small driving power, low saturation voltage and fast switching speed. Therefore, IGBT is the first choice for electric equipment. [0003] However, when the electrode current of the IGBT module increases, the rated loss that can be generated becomes larger. The switching loss increases, and the heating of the device intensifies. The heat generated must be exported as soon as possible. The use of ceramic heat dissipation substrates can solve th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/645
CPCC04B35/593C04B2235/3225C04B2235/3229C04B2235/3227C04B2235/96C04B2235/9607
Inventor 瞿友福
Owner 浙江锐克特种陶瓷有限公司