Silicon carbide crystal growth device and growth method thereof

A growth device, silicon carbide technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of inclusion defects, affecting the quality of silicon carbide crystals, etc., and achieve the effect of increasing sufficiency

Active Publication Date: 2020-09-04
金华博蓝特新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this environment, the remaining carbon will undergo graphitization, and the generated carbon particles will reach the crystal surface driven by gas phase transport, forming inclusion defects and affecting the quality of silicon carbide crystals.

Method used

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  • Silicon carbide crystal growth device and growth method thereof
  • Silicon carbide crystal growth device and growth method thereof
  • Silicon carbide crystal growth device and growth method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Such as figure 1 As shown, the high-purity silicon powder raw material is placed in the crucible body 1, and ethylene gas and argon gas enter from the first gas inlet pipe 6 and the second gas inlet pipe 7 through the first flow controller 8 and the second flow controller 9 respectively. into the gas reaction zone. The high-purity silicon powder raw material is heated by the first heater 13 to generate silicon vapor, and the silicon vapor reacts with the injected ethylene gas in the reaction zone to generate Si m C n Component gas phase. The temperature of the first heater 13 , the second heater 14 and the third heater 15 is adjusted so that the inner cavity of the crucible forms a temperature gradient required for gas sublimation from bottom to top. Si formed in the reaction zone m C n The gas phase of the components and the unreacted silicon vapor and ethylene gas are driven by the temperature gradient and sublime through the vent hole 201 in the middle region of...

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PUM

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Abstract

The invention provides a silicon carbide crystal growth device and a silicon carbide crystal growth method. The growth device comprises a crucible assembly, a seed crystal fixator, a gas system and atemperature control system, the crucible assembly comprises a crucible body, a graphite partition plate and a crucible cover, the graphite partition plate is arranged on the upper portion of the crucible body and provided with a vent hole structure, and the crucible cover covers the crucible body to form a crucible internal containing cavity; the seed crystal fixer is arranged on the inner side ofthe crucible cover and is positioned above the graphite partition plate; the gas system comprises a gas inlet pipeline and a gas outlet pipeline; the air inlet pipeline is connected with an air inletformed in the crucible body, and the air inlet is located below the graphite partition plate; the exhaust pipeline is connected with an exhaust port formed in the crucible cover; and the temperaturecontrol system is used for controlling the crucible assembly to be heated. The graphite partition plate is used for rectifying gas-phase substances sublimated upwards, the production cost is reduced,and meanwhile the percent of pass and the quality of crystals are improved.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a silicon carbide crystal growth device and a growth method. Background technique [0002] As a representative of the third-generation semiconductor materials, silicon carbide (SiC) has the characteristics of energy bandwidth, high thermal conductivity, high saturation drift velocity of electrons, high critical breakdown electric field, low dielectric constant, and good chemical stability. It is an ideal material for making high-temperature, high-frequency, high-power, radiation-resistant, short-wavelength light-emitting and photoelectric integrated components. It has a wide range of high-frequency, high-power, high-temperature-resistant, radiation-resistant semiconductor components and ultraviolet detectors. application prospects. [0003] At present, the physical vapor transport (PVT) method is the main growth technology for the production of silicon carbide single crys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 徐良杨新鹏蓝文安刘建哲余雅俊夏建白李京波郭炜叶继春占俊杰
Owner 金华博蓝特新材料有限公司
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