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Multi-junction solar cell based on graphene/semiconductor hetero-integration

A solar cell and semiconductor technology, applied in semiconductor devices, circuits, photovoltaic power generation, etc., can solve problems such as only about 20%, the inability to fully utilize the advantages of graphene/semiconductor solar cells, and the difficulty of multi-junction solar cells. The effect of reducing loss, improving photoelectric conversion efficiency, and simplifying the preparation process

Pending Publication Date: 2020-09-04
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, most of the previous research focused on single-junction graphene / semiconductor heterogeneous solar cells. Due to the inevitable thermal electron relaxation process of hot electrons, the overall conversion efficiency of graphene / semiconductor heterogeneous solar cells can only reach 20%. about
Previous studies have also bonded single-junction graphene / semiconductor heterogeneous solar cells with traditional PN junctions to achieve high-efficiency solar cells, but because the efficiency of traditional PN junction solar cells is not high enough and requires lattice matching requirements, multi-junction solar cells It is difficult to exceed 5 layers, and the advantages of graphene / semiconductor solar cells cannot be fully utilized

Method used

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Embodiment 1

[0023] 1) First prepare the graphene / Ge solar cell: make an electrode on one side of the Ge substrate—a Ti / Au electrode, and then use a flexible polymer material such as polymethyl methacrylate (PMMA) as a support layer to support the single-layer graphene Wet transfer to the other side of Ge, and then remove the PMMA with acetone isopropanol to obtain a graphene / Ge heterojunction solar cell;

[0024] 2) Make heavily doped GaAs on the graphene / Ge solar cell as the first tunneling layer;

[0025] 3) Preparation of graphene / GaAs solar subcells: use PMMA as a support layer to wet-transfer single-layer graphene to GaAs substrates, and then remove PMMA with acetone isopropanol to obtain graphene / GaAs heterojunction solar subcells;

[0026] 4) bonding the graphene / GaAs solar subcell to the first tunneling layer, and making heavily doped GaAs on the graphene / GaAs solar cell as the second tunneling layer;

[0027] 5) Preparation of graphene / GaInP solar subcells: transfer graphene to ...

Embodiment 2

[0030] 1) First prepare graphene / GaAs solar cells: make an electrode on the side of GaAs—Ag electrode, and then wet-transfer single-layer graphene to GaAs by using a flexible polymer material such as polymethyl methacrylate (PMMA) as a support layer On the other side, PMMA is then removed with acetone isopropanol to obtain a graphene / GaAs solar subcell;

[0031] 2) making heavily doped GaAs first tunneling layer on the graphene / GaAs solar cell;

[0032] 3) Preparation of graphene / GaInP solar cells: use PMMA as a support layer to wet-transfer single-layer graphene to the surface of GaInP, and then remove PMMA with acetone isopropanol to obtain graphene / GaInP solar sub-cells;

[0033] 4) Bond the graphene / GaInP solar subcell to the first tunneling layer, and finally prepare electrode Cu on the graphene to obtain a double-junction heterogeneous solar cell based on the graphene / semiconductor heterojunction. The efficiency of double-junction cells based on graphene / semiconductor h...

Embodiment 3

[0035] 1) First prepare the graphene / GaInAs solar cell: make an electrode on one side of the GaInAs substrate——Au electrode, and then use a flexible polymer material such as polymethyl methacrylate (PMMA) as a support layer to wet-transfer the single-layer graphene To the other side of GaInAs, and then use acetone isopropanol to remove PMMA to obtain graphene / GaInAs solar sub-cells;

[0036] 2) making a heavily doped AlGaAs first tunneling layer on the graphene / GaInAs solar cell;

[0037]3) Preparation of graphene / GaInAsP solar cells: use PMMA as a support layer to wet-transfer single-layer graphene to GaInAsP, and then remove PMMA with acetone isopropanol to obtain graphene / GaInAsP solar sub-cells;

[0038] 4) bonding the graphene / GaInAsP solar cell to the first tunneling layer, and making heavily doped AlGaAs on the graphene / GaInAsP solar cell as the second tunneling layer;

[0039] 5) Preparation of graphene / GaAs solar cells: use PMMA as a support layer to wet-transfer sin...

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Abstract

The invention discloses a multi-junction solar cell based on graphene / semiconductor hetero-integration, and the solar cell employs the power generation performance of a hetero-junction formed by graphene and a semiconductor, effectively employs hot electron energy in the graphene and the semiconductor, and improves the open-circuit voltage of each single-junction solar cell. A plurality of graphene-based heterojunction single cells with different barrier heights are sequentially arranged from bottom to top, so that solar energy of different optical bands can be respectively absorbed, the utilization rate of sunlight is greatly improved, and the photoelectric conversion efficiency of the solar cell is improved. Besides, compared with a traditional PN junction solar cell, the solar cell doesnot need to consider the lattice matching problem at all, the upper layer cell can be directly bonded on a tunneling layer on the lower layer cell, the manufacturing process is simple, the conversionefficiency is higher, and the solar cell can be popularized on a large scale.

Description

technical field [0001] The invention relates to a solar cell and a manufacturing method thereof, in particular to a multi-junction solar cell based on graphene / semiconductor heterogeneous integration and a preparation method thereof, belonging to the technical field of new solar cells. Background technique [0002] Efficient utilization of solar energy is an important pursuit of human development. At present, common solar cells convert sunlight into holes and electrons in semiconductors, and then separate them through the built-in electric field of semiconductor PN devices to output electrical energy. However, in PN devices, the holes and electrons generated by photoexcitation rapidly relax to the bottom of the conduction band and the top of the valence band, so the energy of high-energy photons, that is, the energy of hot electrons, cannot be effectively utilized. Due to the strong electron-phonon interaction in semiconductors, the relaxation time of hot electrons is very s...

Claims

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Application Information

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IPC IPC(8): H01L31/0725H01L31/074H01L31/0224
CPCH01L31/022425H01L31/0725H01L31/074Y02E10/50
Inventor 林时胜陆阳华延燕飞
Owner ZHEJIANG UNIV
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