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Vertical near ultraviolet light-emitting diode and preparation method thereof

A technology of light-emitting diodes and light-emitting layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of weak electrode adhesion, easy falling off of wire-bonded electrodes, rough and poor interface surface conditions, etc.

Pending Publication Date: 2020-09-15
山西中科潞安紫外光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the particularity of the vertical structure LED, in order to improve the light extraction efficiency of the N-GaN surface, the surface will be roughened, and the increase in roughness will make the light on the bottom surface of the N-Pad more scattered out of the N electrode and the epitaxial layer N. -GaN interface, so if this part of the scattered light cannot be fully reflected, it will be absorbed by the thin metal layer of the N electrode and cause more light loss. At the same time, the surface condition of this interface will be rough and deteriorated, which will lead to adhesion with the electrode The force becomes smaller, and the subsequent packaging wire electrode is easier to fall off

Method used

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  • Vertical near ultraviolet light-emitting diode and preparation method thereof
  • Vertical near ultraviolet light-emitting diode and preparation method thereof

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Experimental program
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Embodiment 1

[0026] This embodiment provides a method for manufacturing a vertical near-ultraviolet light-emitting diode. The method manufactures a vertical near-ultraviolet light-emitting diode. The structure of the vertical near-ultraviolet light-emitting diode is as follows figure 1 Shown:

[0027] It includes:

[0028] Substrate 8

[0029] In this specific embodiment, the substrate is the base of the entire vertical structure LED chip, which is arranged at the bottom of the LED chip. The substrate is a copper / tungsten substrate, that is, a conductive substrate, and the conductive substrate is connected to the P electrode.

[0030] bonding layer 7

[0031] The bonding layer is disposed on the upper surface of the substrate, usually using a Ti / Au thin layer 7 .

[0032] mirror layer 6

[0033] The mirror layer is arranged on the upper surface of the bonding layer, and there is a luminescent layer above the mirror layer 6, and the light emitted from the luminescent layer is reflecte...

Embodiment 2

[0048] This embodiment 2 provides a method for preparing a light-emitting diode, and the method is used to manufacture the light-emitting diode as described in embodiment 1. In order to improve the manufacturing quality of the light emitting diode and improve the light extraction efficiency.

[0049] The method in the present embodiment 2 comprises the steps:

[0050] Step 1. Fabricate GaN epitaxial light-emitting layer

[0051] In this step, first grow a GaN epitaxial light-emitting layer on a sapphire substrate by metalorganic chemical vapor deposition, preferably sequentially comprising a u-GaN layer, an N-GaN layer, a multi-quantum well layer and a P-GaN layer; the above-mentioned manufacturing process can be It is formed by HMOCVD (High Temperature Vapor Chemical Deposition). Because it belongs to the prior art, it will not be expanded in detail in this embodiment.

[0052] Step 2. Make the mirror layer

[0053] In this step, the sapphire substrate can be first ground...

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Abstract

The invention discloses a vertical light-emitting diode, which comprises a metal substrate, a light-emitting layer and an ITO layer, wherein the metal substrate is arranged at the bottom; the light-emitting layer is arranged above the metal substrate, and the light-emitting layer comprises a P-type semiconductor material layer, a quantum well layer and an N-type semiconductor material layer whichare arranged from bottom to top; the ITO layer is arranged on the upper surface of the N-type semiconductor material layer, through holes with a fixed interval period are uniformly formed in the ITO layer, and the height of the ITO layer and the height of the through holes are both one fourth of the light-emitting wavelength of the light-emitting diode; a first metal material electrode is fixedlyarranged in the through hole; and a second metal material electrode in contact with the ITO layer and the first metal material electrode is arranged on the upper surface of the ITO layer. According tothe scheme, the light emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] This patent belongs to the technical field of semiconductor light-emitting diodes, and specifically relates to a vertical near-ultraviolet light-emitting diode and a preparation method thereof. Background technique [0002] With the rapid development of LED technology, the application range of near-ultraviolet LEDs in the wavelength range of 320-400nm is becoming wider and wider. Compared with traditional UV light sources, UV LEDs are more energy-efficient, have a longer lifespan, and do not contain toxic substances. However, compared with GaN-based near-ultraviolet LEDs and blue LEDs, the quantum efficiency of ultraviolet LEDs is low, and the metal reflector absorbs light in the ultraviolet band, resulting in lower output power of ultraviolet LEDs. The existing vertical structure LED uses bonding and laser lift-off technology to transfer the GaN epitaxial layer from the sapphire substrate to the metal or silicon substrate with better conductivity and...

Claims

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Application Information

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IPC IPC(8): H01L33/46H01L33/32H01L33/38H01L33/06H01L33/00
CPCH01L33/46H01L33/32H01L33/382H01L33/06H01L33/0075
Inventor 尉尊康崔志勇郭凯薛建凯
Owner 山西中科潞安紫外光电科技有限公司