Narrow-edge current type silicon PIN radiation detector with non-penetrating groove and preparation method of narrow-edge current type silicon PIN radiation detector

Abstract

The invention discloses a narrow-edge current type silicon PIN radiation detector with a non-penetrating groove and a preparation method of the narrow-edge current type silicon PIN radiation detector.The preparation method comprises the steps of forming a P+ region and an N+ region on the front surface and the back surface of an I-region semiconductor silicon wafer through an ion implantation process, etching the I-region semiconductor silicon wafer to form a non-penetrating groove with large enough width, and diffusing and doping on the surface of the groove to form the N+ region. Accordingto the invention, the non-penetrating groove structure is designed on the basis of a conventional PIN structure detector, so that the dependence of a full-penetrating groove structure on a supportingsilicon wafer is avoided, and the process is simplified; and moreover, the purpose of narrow edge of the detector is achieved, the dead zone and the required scribing area of the detector are reduced,the generation of defects is reduced, and the collection efficiency of the detector is improved. In addition, a low-resistance layer is formed in the N+ region on the surface of the non-penetrating groove, so that the detector can work under high voltage. The current type silicon PIN radiation detector can be applied to the fields of nuclear radiation detection, aerospace and the like which haverequirements on collection efficiency and high-voltage working environment.

Description

technical field [0001] The invention relates to the field of nuclear radiation detection, in particular to a narrow edge current type silicon PIN radiation detector with a non-penetrating groove and a preparation method thereof. Background technique [0002] With the continuous development of the field of semiconductor technology, the performance of semiconductor radiation detectors has been greatly improved. Among them, the amperometric silicon PIN radiation detector has been widely used in nuclear radiation detection, radiation protection, aerospace, environmental monitoring and other fields due to its advantages of simple structure, small size, high energy resolution, wide linear range, and fast pulse time response. Very wide range of applications. [0003] The current-type silicon PIN radiation detector is in a fully depleted state by applying a reverse bias to the detector. When the radiation particles enter the detector and are absorbed, corresponding electron-hole pa...

AI Technical Summary

Problems solved by technology

[0004] In the manufacturing process of current-mode silicon PIN radiation detectors, the detectors are usually cut and separated from the wafer by diamond scribing. There is a large leakage current, which limits its operation at high voltage

In addition, there is usually a distance of at least several hundred microns between the PN junction interface and the actual edge of the detector, which causes a large dead zone in the detector, which greatly affects the collection efficiency of the radiation detector

In the field of three-dimensional detectors, it is reported that a penetrating trench with a relatively narrow width is etched on the edge of the detector, and high-concentration ion implantation is performed on the edge to form an ohmic contact to reduce the dead zone, but the penetrating trench The process needs to be operated on the supporting silicon wafer, and the process complexity and difficulty are relatively large

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