Unlock instant, AI-driven research and patent intelligence for your innovation.

Non-doped solution-processable dendritic thermally activated delayed fluorescence electroluminescent diodes

A thermal activation delay, solution processing technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of efficiency roll-off, low start-up voltage, start-up voltage and unsatisfactory life, and improve the efficiency roll-off Severe, reduce the effect of selective energy level matching, fast and effective reverse intersystem crossing process

Active Publication Date: 2021-11-19
SOUTH CHINA UNIV OF TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As we all know, the two shortcomings of serious efficiency roll-off and high turn-on voltage are very fatal to the application progress of flexible and large-area displays of solution-processed TADF-OLEDs.
[0005] In 2015, Yamamoto et al. reported that the lifetime of a non-doped solution processed TADF-OLED was 40 minutes (Thermally activated delayed fluorescence OLEDs with fully solution processed organic layers exhibiting nearly 10% external quantum efficiency.Chem.Commun.,2017,53,2439 --2442), the lifetime of non-doped solution-processed heat-activated delayed fluorescent devices has not made substantial progress
[0006] Therefore, in view of the current situation that the efficiency roll-off, turn-on voltage and life of the non-doped solution processed electroluminescent diodes are not ideal, explore and develop a non-doped solution with low turn-on voltage, low efficiency roll-off, and long life. Solution-processed dendritic thermally activated delayed fluorescence electroluminescent diodes and their preparation methods are particularly important for promoting the flexible and large-area applications of OLEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-doped solution-processable dendritic thermally activated delayed fluorescence electroluminescent diodes
  • Non-doped solution-processable dendritic thermally activated delayed fluorescence electroluminescent diodes
  • Non-doped solution-processable dendritic thermally activated delayed fluorescence electroluminescent diodes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The non-doped solution-processed dendritic thermally activated delayed fluorescent electroluminescent diode with low turn-on voltage, low efficiency roll-off and considerable device life in this embodiment consists of a substrate with an anode and a hole transport layer stacked in sequence , exciton blocking layer, light emitting layer, exciton blocking layer, electron transport layer, cathode buffer layer and cathode.

[0046] The luminescent layer is The hole transport layer is PEDOT:PSS, The exciton blocking layer between the hole transport layer and the light emitting layer is PVK, Exciton blocking layer T2T between the light emitting layer and the electron transport layer, Electron transport layer NBphen, Cathode buffer layer material CsF layer, Al as the cathode.

[0047] In order to reflect the superiority of the performance of the dendritic thermally activated delayed fluorescent light-emitting layer, the light-emitting layer P1 is used as a comparison,...

Embodiment 2

[0059] In this embodiment, the non-doped light-emitting layer material with a short excited state lifetime is replaced with T7, and other conditions are the same as in Embodiment 1.

[0060] The structure of T7 is

[0061] In this embodiment, the photoelectric performance test is carried out on the above-mentioned device, and the test process is the same as that in Embodiment 1.

[0062] In this embodiment, the transient fluorescence lifetime test is carried out on the above light-emitting layer film, and the test process is the same as that in Embodiment 1.

[0063] The current density-voltage-brightness curve, the external quantum efficiency-brightness curve of the non-doped solution-processed device (non-doped solution-processed type dendritic thermally activated delayed fluorescence electroluminescent diode) obtained in this embodiment, at 10 milliseconds The electroluminescence spectra, transient fluorescence lifetime spectra, and brightness-time decay curves at the cu...

Embodiment 3

[0069] The non-doped solution-processed dendritic thermally activated delayed fluorescence electroluminescent diode of this embodiment is composed of a substrate with an anode, a hole transport layer, a light emitting layer, an electron transport layer, a cathode buffer layer and a cathode stacked in sequence .

[0070] The luminescent layer is The hole transport layer is PEDOT:PSS, Electron transport layer TPBi, Cathode buffer layer material CsF layer, Al as the cathode.

[0071] In order to reflect the superiority of the performance of the dendritic thermally activated delayed fluorescent light-emitting layer, the light-emitting layer P1 is used as a comparison, and the structural formula of P1 is as follows:

[0072]

[0073] Preparation method of non-doped solution-processed thermally activated delayed fluorescence electroluminescent diode:

[0074] Take a number of ITO conductive glass substrates with the same batch number, the size is 15 mm × 15 mm, the thickne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of thermally activated delayed fluorescent electroluminescent diodes, and discloses a non-doped solution-processed dendritic thermally activated delayed fluorescent electroluminescent diode. The non-doped solution-processed dendritic thermally activated delayed fluorescent electroluminescent diode comprises sequentially stacked substrates, anodes, hole transport layers, short excited state lifetime dendritic thermally activated delayed fluorescent light-emitting layers, electron transport layers and Cathode; the short excited state lifetime dendrite thermal activation of the light-emitting layer delays the excited state lifetime of the fluorescent light-emitting material≦5 microseconds. The non-doped solution-processed dendritic thermally activated delayed fluorescent electroluminescent diode has the characteristics of low turn-on voltage, low efficiency roll-off, and long device life, and does not need any complicated metal-doped transport layer or blended transport layer, has a good application prospect.

Description

technical field [0001] The invention relates to the field of organic photoelectric devices, in particular to a non-doped solution-processed dendritic heat-activated delayed fluorescence electroluminescent diode and a preparation method thereof. Background technique [0002] At present, organic light-emitting diodes (OLEDs) have been applied and promoted in display fields such as smart phones, tablet computers, and liquid crystal televisions. Only 25% of singlet excitons in traditional fluorescent materials are utilized, while phosphorescent materials contain precious metals and the manufacturing cost is very high, which to some extent hinders the industrial application of organic light-emitting diodes. Pure organic compounds with thermally activated delayed fluorescence (TADF) properties have successfully circumvented these two problems and become the most promising organic light-emitting materials of the third generation. At present, the processing technology of vacuum-eva...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/624H10K85/626H10K85/633H10K85/631H10K85/654H10K85/6572H10K85/657H10K50/11H10K71/00
Inventor 苏仕健何燕梅李伟蔡欣佚
Owner SOUTH CHINA UNIV OF TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com