Fluxing-agent-free low-loss LTCC material and preparation method thereof
A low-loss, flux technology, applied in the field of low-dielectric, low-loss and low-temperature co-fired ceramic materials and their preparation, can solve the problems of inability to apply and the Qf value of the material is not too high, and achieve low production cost, mature synthesis process, and good application. Foreground effect
Inactive Publication Date: 2020-09-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
[0006] In order to provide LTCC microwave ceramic materials with excellent comprehensive performance for the development of high-performance LTCC devices, for the current monoclinic structure of Zn 3 B 2 o 6 Ceramics cannot be applied to LTCC technology, and the Qf value of the material is not too high; the invention provides a low-loss LTCC material without flux and its preparation method
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[0024] Below Zn 2.89 co 0.05 Cu 0.06 B 2 o 6 Taking microwave ceramics as an example, a low-loss LTCC microwave ceramic material provided by the present invention and its preparation method are further described.
[0025] Step 1: Using ZnO, CoO, CuO, H 3 BO 3 As raw material, according to Zn 2.89 co 0.05 Cu 0.06 B 2 o 6 (x=0.05, y=0.06) element molar ratio calculates the mass percentage of raw materials, weighs raw materials according to mass percentage (excess boric acid 10wt%), puts raw materials into nylon tank, according to deionized water: raw material = 3:1 (mass ratio) add deionized water as ball milling medium, ball mill 6h in planetary ball mill, rotating speed is 300 rpm;
[0026] Step 2: Put the slurry obtained in Step 1 into an oven for drying, and set the oven temperature to 100°C;
[0027] Step 3: Put the block material obtained in Step 2 in a mortar, grind it, and pass it through a 40-mesh sieve. Put the sieved powder in a corundum crucible and pre-f...
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Abstract
The invention belongs to the field of microwave dielectric materials and manufacturing thereof, and particularly relates to a fluxing-agent-free low-loss LTCC material and a preparation method thereof. The chemical formula of the material is shown in the specification, Zn<3-x-y>Co<x>Cu<y>B<2>O<6> (x is greater than or equal to 0.05 and less than or equal to 0.20, and y is greater than or equal to0.02 and less than or equal to 0.12); the sintering temperature ranges from 825 DEG C to 875 DEG C, the relative dielectric constant ranges from 5.85 to 6.95, the Q*f value ranges from 63400 GHz to 165000 GHz, and the temperature coefficient of resonance frequency ranges from-25 ppm / DEG C to-70 ppm / DEG C. Co and Cu ions are used for co-substitution; the sintering temperature of the material systemis reduced to 825-875 DEG C; the requirements of LTCC low-temperature sintering are completely met, the material loss is greatly reduced, the material is a pure ceramic material, no glass fluxing agent is doped, the preparation cost of the material is reduced, meanwhile, the problems of loss increase caused by glass doping and incompatibility of an LTCC process are avoided, and the preparation method has a good application prospect.
Description
technical field [0001] The invention belongs to the field of microwave dielectric material and its manufacture, and relates to a low-dielectric and low-loss low-temperature co-fired ceramic (LTCC) material and a preparation method thereof. Background technique [0002] Microwave dielectric materials are very important in wireless communication and highly integrated electronic systems, and are usually used to make passive devices such as filters, capacitors and duplexers, or packaging substrate materials. With the rapid development of electronic products, components tend to be miniaturized, high-performance, and high-reliability, and electronic packaging tends to be highly integrated, multi-functional, and miniaturized. LTCC ceramic material is a kind of microwave dielectric material. Its largest The characteristic is that the sintering temperature is around 900°C. Using LTCC stacking technology, through co-firing with three-dimensional stacking of metallic silver with low re...
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IPC IPC(8): C04B35/453C04B35/64C04B35/626C04B35/634
CPCC04B35/453C04B35/6261C04B35/63416C04B35/64C04B2235/3232C04B2235/3236C04B2235/3275C04B2235/3281C04B2235/3409C04B2235/6562
Inventor 苏桦钟茂峰唐晓莉荆玉兰李元勋
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA