Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon-based patch and preparation method therefor

A silicon-based patch and patch technology, applied in other medical devices, hypodermic injection devices, needles, etc., can solve the problems of complex process, high cost, slow production, etc., and achieve the effect of simple process and low cost

Active Publication Date: 2020-10-02
嘉兴尚牧智能装备有限公司
View PDF22 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the existing problems of microneedles on silicon wafers mainly include: 1. Most of them use deep silicon dry etching technology to prepare microneedles, which has complicated process, slow production and high cost; 2. The problem of cross-infection caused by secondary damage, A big obstacle to the popularization of silicon-based microneedle array patches

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon-based patch and preparation method therefor
  • Silicon-based patch and preparation method therefor
  • Silicon-based patch and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] ginseng Figure 1 to Figure 3 As shown, the invention discloses a method for preparing a silicon-based patch, the method comprising:

[0039] S1. Prepare a microneedle array structure 11 with spires on the silicon wafer 10;

[0040] S2. Prepare a pn junction on the surface of the microneedle array structure 11, including an n-Si region 111 and a p-Si region 112;

[0041] S3 , preparing metal nanoparticles 12 on the surface of the microneedle array structure 11 on the silicon wafer to obtain a silicon-based patch 100 .

[0042] Further, step S1 includes:

[0043] Place the silicon wafer in an alkaline solution, and prepare a pyramid structure on the surface of the silicon wafer through a chemical etching process;

[0044] The silicon wafer is placed in an etching solution, and modified by chemical etching to form a microneedle array structure with sharp spires.

[0045] Among them, the chemical etching process is specifically:

[0046] Place the (100) crystalline si...

Embodiment 1

[0054] The preparation method of the silicon-based patch in this embodiment is as follows:

[0055] 1. Prepare a microneedle array structure with a spire on a silicon wafer.

[0056] First, an array mask is formed on the surface of the silicon wafer by steps such as pattern exposure, photoresist development, and chromium layer etching;

[0057] Then place the silicon chip of (100) crystal orientation in alkaline solution to corrode, the concentration of alkali in the alkaline solution is 5%, the reaction temperature is 70 DEG C, the reaction time is 300min, finally form the microneedle of pyramid shape on the surface of silicon chip, microneedle The needle height is 120μm, and the microneedle distribution density is about 625 / cm 2 .

[0058] 2. Prepare a pn junction on the surface of the microneedle array structure.

[0059] A pn junction is prepared on the surface of the microneedle array structure by high-temperature diffusion, and the sheet resistance of the pn junction ...

Embodiment 2

[0064] The preparation method of the silicon-based patch in this embodiment is as follows:

[0065] 1. Prepare a microneedle array structure with a spire on a silicon wafer.

[0066] First, an array mask is formed on the surface of the silicon wafer by steps such as pattern exposure, photoresist development, and chromium layer etching;

[0067] Then place the silicon wafer with (100) crystal orientation in an alkaline solution to etch, the alkali concentration in the alkaline solution is 5%, the reaction temperature is 70° C., the reaction time is 30 minutes, and the size of the pyramid structure formed on the surface of the silicon wafer is 80 μm;

[0068] Then, the above-mentioned pyramid structure is corroded by 0.5% lye containing additives, and finally a microneedle array structure with sharp spires is formed on the surface of the silicon wafer. The size of the microneedles with sharp spires is 50um, and the distribution density of the microneedles is about 625 piece / cm ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a silicon-based patch and a preparation method therefor. The preparation method comprises the steps: S1. preparing a spired microneedle array structure on a silicon wafer; S2.preparing pn junctions on the surface of the microneedle array structure; and S3. preparing metal nanoparticles on the surface of the microneedle array structure of the silicon wafer, thereby obtaining the silicon-based patch. The preparation method disclosed by the invention is simple in process and low in cost; the silicon-based patch can load drugs and is applied to skin service or treatment, and pointed ends of an array only enter a corneous layer of the skin; after illumination, a photon-generated carrier in the silicon wafer can promote infiltration of the drugs to an inner layer of theskin and accelerate microcirculation of capillary tubes; and Ag nanoparticles have a good killing action on bacteria and are beneficial to preventing skin infection.

Description

technical field [0001] The invention belongs to the technical field of microneedle patches, in particular to a silicon-based patch and a preparation method thereof. Background technique [0002] The working mode of microneedles is mainly transdermal administration. Due to the blocking effect of the cuticle of the skin, it is difficult for the coating drugs used in general treatment and beauty to enter the active epidermis and dermis, so the effect is not significant. Micro-needles can penetrate the epidermis below 50-100 nanometers, and load drugs and skin care products, which greatly improves the penetration ability of active nutrients through the stratum corneum into the epidermis and dermis cells, and significantly improves the effect of drug delivery and beauty. In addition, microneedles can also be applied to tattoos, and the loading of dyes will make the tattooing process painless, safe and fast. [0003] At present, most of the known microneedles are prepared by inje...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): A61M37/00
CPCA61M37/0015A61M2037/0053A61M2037/0023A61M2037/0007
Inventor 辛煜黄洁苏晓东查嘉伟
Owner 嘉兴尚牧智能装备有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com