Silicon carbide single crystal growth device and method

Abstract

The present invention discloses a silicon carbide single crystal growth device and method, the silicon carbide single crystal growth device comprises a container body, a heat preservation layer is arranged in the container body, an induction coil is arranged on the periphery of the container body or the periphery of the heat preservation layer, a material bearing crucible is arranged in the thermal insulation layer and is used for placing a silicon carbide raw material, a heating body is located in the heat preservation layer and arranged around the material bearing crucible, and a temperatureadjusting device is used for adjusting the temperature gradient in the material bearing crucible. The internal stress of the crystal can be reduced, and the quality of the crystal is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon carbide single crystal growth device and a silicon carbide single crystal growth method. Background technique [0002] At present, with the growth of the crystal, the downward movement of the crystallization interface causes the actual temperature of the crystallization surface to deviate from the ideal temperature, and the actual temperature gradient at the front of the crystallization interface deviates from the ideal temperature gradient. At this time, traditional growth equipment and growth methods such as physical vapor transport The physical vapor transport method (PVT) uses the relative position of the moving crucible and the induction coil to achieve adjustment. However, the change of the induced electromotive force is not a simple linear increase or decrease. The result is related to the initial position, induction frequency, and heating material. It is ...

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Problems solved by technology

On the other hand, as the crystal size increases, the diameter of the thermal field is also expanding, and moving the crucible or heating element cannot change its essential temperature distribution, that is, the temperature distribution is low in the middle and high in the surrounding temperature. The temperature difference / temperature gradient is also difficult to be completely optimized by the movement of the crucible or heating element, resulting in greater stress inside the crystal

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