Metamaterial terahertz biosensor and production method thereof
A biosensor, terahertz technology, applied in the field of sensors, can solve the problems of low absorption rate, weakened energy, weakened resonance strength, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0047] The preparation method of the above metamaterial terahertz biosensor includes the following steps:
[0048] 1) Preparation of the top layer module: on the dielectric layer 1, the metal microstructure layer 2 is formed on the dielectric layer 1 through the steps of gluing, exposure, development, film coating, and peeling to obtain the top layer module;
[0049] 2) Preparation of the bottom module: etching on the base layer 5 to form a groove matching the size of the top module, and then laminating a metal film on the bottom surface of the groove to form the metal reflective layer 4, and finally opening and recessing on the base layer 5 The liquid inlet 7 and the liquid outlet 6 connected by the tank, to obtain the bottom module;
[0050] 3) The top module and the bottom module are glued to form a microfluidic channel 3 between the metal microstructure layer 2 of the top module and the metal reflective layer 4 of the bottom module to obtain the metamaterial terahertz biosensor. ...
Example Embodiment
[0055] Example 1
[0056] To Figure 1 to Figure 3 The shown structure diagram illustrates the structure and preparation of the sensor of the present invention.
[0057] See Figure 1 to Figure 3 The metal microstructure layer 2 is 4╳4 units periodically arranged on the dielectric layer 1, and the period of the metal microstructure layer 2 in the X-axis direction and the period in the Y-axis direction are both 120 μm. In the structure of the metal microstructure layer 2, the outer side length a of the square metal ring is 108 μm and the ring width b is 8 μm; the arm length c of the "H"-shaped metal ring in the double "H"-shaped cross metal structure is 26 μm, and the arm width d It is 8 μm, the leaf length e is 40 μm, and the leaf width f is 6 μm.
[0058] The base layer 5 has a thickness of 110 μm and its material is high-resistance silicon; the dielectric layer 1 has a thickness of 6 μm and its material is polytetrafluoroethylene; the metal microstructure layer 2 has a thickness...
Example Embodiment
[0073] Example 2
[0074] To Figure 7 The sensor structure unit of the structure shown analyzes the absorption characteristics of the sensor.
[0075] in Figure 7 In the sensor structure unit shown, the period (Dx) of the metal microstructure layer 2 in the X-axis direction and the period (Dy) in the Y-axis direction are both 120 μm. In the structure of the metal microstructure layer 2, the outer side length a of the square metal ring is 108 μm and the ring width b is 8 μm; the arm length c of the "H"-shaped metal ring in the double "H"-shaped cross metal structure is 26 μm, and the arm width d It is 8 μm, the leaf length e is 40 μm, and the leaf width f is 6 μm. The base layer 5 has a thickness of 110 μm and its material is high-resistance silicon; the dielectric layer 1 has a thickness of 6 μm and its material is polytetrafluoroethylene; the metal microstructure layer 2 has a thickness of 0.2 μm and its material is silver; The thickness of the reflective layer 4 is 0.2 μm, an...
PUM
Property | Measurement | Unit |
---|---|---|
Arm length | aaaaa | aaaaa |
Arm width | aaaaa | aaaaa |
Ye chang | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap