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Low-cost copper-iron-tin-sulfur film with stannite structure and electrochemical preparation method of copper-iron-tin-sulfur film

A kesterite structure, copper-iron-tin-sulfur technology, applied in the low-cost kesterite structure Cu2FeSnS4 thin film and its electrochemical preparation, CFTS thin film solar cell absorber field, can solve the problem of high equipment price, complexity, and difficulty in large-scale production. Realization and other problems, to achieve the effect of easy deposition production, simple equipment and low cost

Active Publication Date: 2020-10-30
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently Cu 2 FeSnS 4 The preparation of absorbing layer materials is mainly divided into vacuum technology (thermal evaporation, magnetron sputtering, etc.) and non-vacuum technology (solution method, electrodeposition method, etc.). Although vacuum technology has good film quality, the equipment required is expensive. and complex, making mass production difficult

Method used

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  • Low-cost copper-iron-tin-sulfur film with stannite structure and electrochemical preparation method of copper-iron-tin-sulfur film
  • Low-cost copper-iron-tin-sulfur film with stannite structure and electrochemical preparation method of copper-iron-tin-sulfur film
  • Low-cost copper-iron-tin-sulfur film with stannite structure and electrochemical preparation method of copper-iron-tin-sulfur film

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Effect test

Embodiment 1

[0026] 1) Clean the Mo glass substrate, (i) first wash the bottom with detergent to remove the grease on the hands and the substrate; (ii) then put the substrate in acetone solution for 10 minutes to remove the MoO on the Mo surface 3 (iii) then ultrasonically cleaning the substrate in an ethanol solution to remove residues of grease, acetone, etc. on the substrate; (iv) ultrasonically cleaning the substrate in ultrapure water for 10 minutes to clean the residual ethanol; (v ) to dry the substrate for use.

[0027] 2) Weigh 2mmol CuCl 2 2H 2 O, trisodium citrate of 10mmol, 5mmol tartaric acid are made the copper metal salt solution of PH=4.6. Cu / Mo precursor thin films were prepared by using Mo-coated glass as the working electrode, graphite as the counter electrode, and a saturated calomel electrode as the reference electrode. The working electrode was deposited in a copper electrolyte at a constant potential of -1.1V for 1600s.

[0028] 3) Weigh 3mmol SnCl 4 2H 2 O, 3mm...

Embodiment 2

[0033] 1) Clean the Mo glass substrate, (i) first wash the bottom with detergent to remove the grease on the hands and the substrate; (ii) then put the substrate in acetone solution for 10 minutes to remove the MoO on the Mo surface 3 (iii) then ultrasonically cleaning the substrate in an ethanol solution to remove residues of grease, acetone, etc. on the substrate; (iv) ultrasonically cleaning the substrate in ultrapure water for 10 minutes to clean the residual ethanol; (v ) to dry the substrate for use.

[0034] 2) Weigh 2mmol CuCl 2 2H 2 O, trisodium citrate of 10mmol, 5mmol tartaric acid are made the copper metal salt solution of PH=4.6. Cu / Mo precursor thin films were prepared by using Mo-coated glass as the working electrode, graphite as the counter electrode, and a saturated calomel electrode as the reference electrode. The working electrode was deposited in a copper electrolyte at a constant potential of -0.8V for 1600s.

[0035] 3) Weigh 3mmol SnCl 4 2H 2O, 3mmo...

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Abstract

The invention discloses a low-cost copper-iron-tin-sulfur film with a stannite structure for a photovoltaic cell and an electrochemical preparation method of the copper-iron-tin-sulfur film. The method comprises the following steps of respectively preparing three metal salt solutions of Cu, Sn and Fe in a molar ratio; performing potentiostatic electrodeposition on three metal stacks of Cu, Sn andFe on an Mo substrate in sequence by adopting a three-electrode system; taking high-purity nitrogen as a protective gas, and performing annealing pretreatment on the metal stacks at 150 to 300 DEG C;and finally, taking the nitrogen as the protective gas and powdered sulfur as a sulfur source, and performing vulcanization annealing on a copper-iron-tin film at 500 to 600 DEG C in order to obtain the Cu2FeSnS4 film with the stannite structure. According to the preparation method, the deposition time and the deposition potential of each layer of metal film can be accurately controlled, and the composition ratio, the grain size, the thickness and the morphology of the Cu2FeSnS4 film are independently controllable. The method is short in reaction time, low in deposition temperature, easy to operate, low in preparation cost, green and pollution-free. The method is suitable for mass production of the Cu2FeSnS4 films for absorption layers of the photovoltaic cells.

Description

technical field [0001] The invention belongs to the field of preparation methods of absorbing layer films for solar photovoltaic cells, and relates to a low-cost kesterite structure Cu 2 FeSnS 4 Thin film and its electrochemical preparation method, the kesterite structure Cu 2 FeSnS 4 The thin film is applied to the absorber layer of CFTS thin film solar cells. Background technique [0002] Today, with the rapid development of industrialization, people's demand for energy continues to increase. With the world-class problem of the depletion of traditional fossil energy, the environmental problems caused by energy consumption have become another obstacle to energy development that needs to be solved urgently. The development of solar cells has become an important way to solve energy and environmental problems. [0003] Among many solar cells, CuIn x Ga 1-x S(Se) 2 (CIGS) thin film solar cells have good stability and up to 10 4 cm -1 ~10 5 cm -1 The absorption coeff...

Claims

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Application Information

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IPC IPC(8): C25D3/38C25D3/30C25D3/20C25D5/10C25D5/50
CPCC25D3/20C25D3/30C25D3/38C25D5/10C25D5/505
Inventor 周继承国晓微
Owner CENT SOUTH UNIV
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