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Quick-attenuation high-light-output gallium oxide scintillation crystal and preparation method thereof

A technology of scintillation crystals and gallium oxide, which is applied in chemical instruments and methods, crystal growth, scintillation components, etc., can solve the problem of unsatisfactory comprehensive scintillation performance of doped gallium oxide crystals, uneven distribution of doped ions, and reduction of total light output, etc. problems, to achieve the effects of comprehensive flicker performance improvement, increased forced convection, and improved consistency

Inactive Publication Date: 2020-10-30
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ce and Si ion doping can increase the proportion of fast-decaying components of gallium oxide crystals, but at the same time the total light output is greatly reduced, and the comprehensive scintillation performance of doped gallium oxide crystals is not ideal (Michal Makowski et al., Optical Materials Express, 9 (2019) 3738-3743.)
Gallium oxide scintillation crystals can be prepared by melt method. The patent publication number CN 107177885 A discloses a preparation method of gallium oxide single crystal scintillator, mainly for non-doped β-Ga 2 o 3 For scintillation crystals, it cannot solve the problem of uneven distribution of dopant ions in doped gallium oxide scintillation crystals

Method used

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  • Quick-attenuation high-light-output gallium oxide scintillation crystal and preparation method thereof
  • Quick-attenuation high-light-output gallium oxide scintillation crystal and preparation method thereof
  • Quick-attenuation high-light-output gallium oxide scintillation crystal and preparation method thereof

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Effect test

Embodiment 1

[0043] In this embodiment, the medium frequency induction dual temperature zone heating method is adopted, and the specific device can be found in figure 1 shown. High-purity gallium oxide (99.9999%) and doping amount 5at.% high-purity GeO 2 (99.9999%) raw material powders are fully mixed, isostatically pressed, and sintered at a constant temperature of 1500° C. for 15 hours to obtain gallium oxide ceramic raw materials for crystal growth. Put the gallium oxide ceramic raw material into the iridium crucible of the guided mold furnace, put the plate-shaped β-Ga 2 o 3 The seed crystal is placed in the seed crystal holder. The guided mold furnace is evacuated to 5Pa and then filled with 99.999% pure He gas + CO 2 gas mixture (CO 2 :He=1:3) until the pressure in the furnace is 1.02MPa, medium frequency induction heating dual temperature zone heating, the heating power of the main temperature zone is 11.5KW, and the heating power of the auxiliary temperature zone is lower than...

Embodiment 2

[0054] High-purity gallium oxide (99.9999%) and doping amount 2at.% high-purity GeO 2 (99.9999%) and doping amount 3at.% high-purity Al 2 o 3 (99.9999%) raw material powders are fully mixed, isostatically pressed, and sintered at a constant temperature of 1600° C. for 20 hours to obtain gallium oxide ceramic raw materials for crystal growth. Put the gallium oxide ceramic raw material into the iridium crucible of the guided mold furnace, and put the plate-shaped β-Ga 2 o 3 The seed crystal is placed in the seed crystal holder. The guided mold furnace is evacuated to 5Pa and then filled with 99.999% pure He gas + CO 2 gas mixture (CO 2 :He=1:1) until the pressure in the furnace is 1.1MPa, medium frequency induction heating dual temperature zone heating, the heating power of the main temperature zone is 11.7KW, and the heating power of the auxiliary temperature zone is lower than the heating power of the main temperature zone 2KW. After heating in dual temperature zones unt...

Embodiment 3

[0057] High-purity gallium oxide (99.9999%) and doping amount 10at.% high-purity Al 2 o 3 (99.9999%) raw material powders are fully mixed, isostatically pressed, and sintered at a constant temperature of 1600° C. for 14 hours to obtain gallium oxide ceramic raw materials for crystal growth. Put the gallium oxide ceramic raw material into the iridium crucible of the guided mold furnace, and put the plate-shaped β-Ga 2 o 3 The seed crystal is placed in the seed crystal holder. The guided mold furnace is evacuated to 5Pa and then filled with 99.999% pure He gas + CO 2 gas mixture (CO 2:He=1:2) until the furnace pressure is 1.05MPa, medium frequency induction heating double temperature zone heating, the heating power of the secondary temperature zone is lower than the heating power of the main temperature zone 2KW. After heating in dual temperature zones until the raw materials in the crucible are completely melted, the crucible rises slowly at a rate of 5mm / min, so that the ...

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Abstract

The invention relates to a quick-attenuation high-light-output gallium oxide scintillation crystal and a preparation method thereof. The chemical formula of the gallium oxide scintillation crystal isbeta-Ga2O3: M, and M is one or two of doped Ge4<+> or Al3<+> ions. Compared with the prior art, the beta-Ga2O3: M gallium oxide scintillation crystal provided by the invention has the advantages thatthe attenuation time is shorter, meanwhile, the light output is not weakened, and the comprehensive scintillation performance of the crystal is improved.

Description

technical field [0001] The invention belongs to the technical field of preparation of nuclear radiation detection materials, and relates to a gallium oxide scintillation crystal with fast decay and high light output and a preparation method thereof. Background technique [0002] Detection and imaging technologies centered on scintillation crystals have been widely used in nuclear medicine, high-energy physics, safety inspection, industrial non-destructive testing, space physics, and nuclear prospecting. The requirements for fast-decay scintillation crystals are getting higher and higher. The scintillator is the core component of the scintillation detection system, and the performance of the scintillator directly affects and restricts the performance of the scintillation detection system. In high count rate occasions, TOF-PET and other fields require scintillators to have as fast a decay time as possible; the high light output of scintillators is conducive to the system to a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B15/00C30B15/14C30B15/30G01T1/00G01T1/202
CPCC30B29/16C30B15/305B22F3/02B22F3/10C30B15/206
Inventor 唐慧丽刘波徐军罗平王庆国何诺天吴锋
Owner TONGJI UNIV
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