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Preparation method of glass film containing rare earth ion doped Ba2GdCl7 micro-crystal

A technology of rare earth ions and glass thin films, which is applied in the field of preparation of glass-ceramic thin films, can solve problems such as device development limitations, achieve the effects of overcoming incomplete uniformity, preventing decomposition and volatilization, and promoting formation

Inactive Publication Date: 2016-03-09
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually thin film and fibrous materials are the most suitable raw materials for making such devices, so the current form of scintillation materials will have great restrictions on the development of future devices

Method used

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  • Preparation method of glass film containing rare earth ion doped Ba2GdCl7 micro-crystal
  • Preparation method of glass film containing rare earth ion doped Ba2GdCl7 micro-crystal
  • Preparation method of glass film containing rare earth ion doped Ba2GdCl7 micro-crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Containing rare earth ions doped with Ba 2 GdCl 7 The preparation method of the glass thin film of crystallite, comprises the steps:

[0039] (1), prepare the raw materials by mole percentage: tetraethoxygermanium: 59mol%, gallium ethoxide: 16mol%, barium chloride: 16mol%, gadolinium chloride: 8mol%, cerium chloride: 1mol%, weigh the total Quantity is the analytically pure each preparation raw material of 30 grams;

[0040] (2), the hydrolysis of tetraethoxygermanium: the tetraethoxygermanium weighed in the step (1) is dissolved in dehydrated alcohol, and the mol ratio of dehydrated alcohol and tetraethoxygermanium is 2: 1, fast Add acetylacetone, the volume ratio of acetylacetone to tetraethoxygermanium is 0.8:1, and carry out strong magnetic stirring, gradually drop distilled water, the molar ratio of distilled water to tetraethoxygermanium is 0.8:1, and carry out hydrolysis at room temperature React for 1 hour to make solution A;

[0041] (3), hydrolysis of galli...

Embodiment 2

[0050] It is basically the same as Example 1, except that the raw materials are prepared in the following molar percentages in the step (1): tetraethoxygermanium: 53mol%, gallium ethylate: 8mol%, barium chloride: 24mol%, gadolinium chloride: 12mol%, europium chloride: 3mol%, each preparation raw material is weighed respectively; In the step (7), the pulling speed of the glass substrate in the gel solution is controlled at 1 mm / s, and the pulling is repeated 5 times, each time The pulling interval time is 15 minutes; in step (8), heat up to 100°C at a rate of 50°C per hour, and then heat up the furnace to 340°C at a rate of 50°C per hour; in step (9), gradually heat up the furnace to 750°C, and react at this temperature for 2 hours.

[0051] For prepared Eu-containing 3+ Ion-doped Ba 2 GdCl 7 The microcrystalline glass film was tested for performance, and the XRD pattern of the glass film after hydrogen chloride treatment was the same as figure 1 Basically the same, but the...

Embodiment 3

[0053] It is basically the same as Example 1, except that the raw materials are prepared in the following molar percentages in the step (1): tetraethoxygermanium: 56mol%, gallium ethylate: 12mol%, barium chloride: 20mol%, gadolinium chloride: 10mol%, terbium chloride: 2mol%, each preparation raw material is weighed respectively; In the step (7), the pulling speed of the glass substrate in the gel solution is controlled at 0.6 mm / s, and the pulling is repeated 3 times, each time Pull interval time is 15 minutes; In step (8), heat up to 100 DEG C with the rate of 40 DEG C per hour, then heat up furnace to 340 DEG C with the speed of 40 DEG C per hour; In step (10), gradually heat up furnace to 730°C and react at this temperature for 3 hours.

[0054] For prepared Tb-containing 3+ Ion-doped Ba 2 GdCl 7 The microcrystalline glass film was tested for performance, and the XRD pattern of the glass film after hydrogen chloride treatment was the same as figure 1 Basically the same,...

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Abstract

The invention discloses a sol-gel preparation method of glass and glass film containing rare earth ion doped Ba2GdCl7 micro-crystal. The sol-gel preparation method is characterized by adopting the following preparation raw materials: 53-59mol% of tetraethoxygermanium, 8-16mol% of gallium ethoxide, 16-24mol% of barium chloride, 8-12mol% of gadolinium chloride and 1-3mol% of rare earth chloride, wherein rare earth chloride is cerium chloride, europium chloride or terbium chloride. The sol-gel preparation method has the advantages that a sol-gel method is a technology for preparing glass by low-temperature aqueous chemical synthesis and is characterized by obtaining glass and the glass film through precursor raw material hydrolysis and polymerization chemical reaction processes, so that the film material can be prepared under the condition of certain liquid viscosity; the low-temperature synthesis condition can conduce to effectively preventing decomposition and volatilization of the chloride raw material.

Description

technical field [0001] The invention relates to the preparation technology of a glass-ceramics film doped with a rare earth ion, in particular to a rare earth ion doped Ba 2 GdCl 7 Sol-gel preparation method of microcrystalline glass film. Background technique [0002] Scintillation material is a photofunctional material that can emit visible light under the excitation of high-energy rays (such as x-rays, γ-rays) or other radioactive particles, and can be widely used in nuclear medicine diagnosis, security inspection, anti-terrorism, high-energy physics and geological exploration and other fields. In recent years, with the rapid development of fields such as medical imaging and security inspection, there is a large demand for new scintillation materials with high performance. Excellent scintillation materials mainly have the following properties: high luminous efficiency, high material density, fast fluorescence decay, good radiation resistance and low production cost. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C10/16
Inventor 冯治刚夏海平江东升王成张健何仕楠汤庆阳盛启国
Owner NINGBO UNIV
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