Preparation method of graphene and tin oxide hollow sphere composite nanomaterial

A technology of composite nanomaterials and hollow spheres, applied in the direction of tin oxide, graphene, nanocarbon, etc., can solve the problems of cumbersome preparation process and weak third-order nonlinear optical response, and achieve simple steps, strong nonlinear optical properties, The effect of promoting crystallization

Active Publication Date: 2020-11-06
HENAN UNIVERSITY
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the G/SnO in the prior art 2 The preparation process of hollow sphere composite materials is cumbersome, and its third-order...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of graphene and tin oxide hollow sphere composite nanomaterial
  • Preparation method of graphene and tin oxide hollow sphere composite nanomaterial
  • Preparation method of graphene and tin oxide hollow sphere composite nanomaterial

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Take 0.182gK 2 SnO 3 ·3H 2 Put O into a beaker, add 35 mL of deionized water, and stir magnetically for 20 minutes to obtain an aqueous solution of potassium sulfate; put 0.24 g of urea into another beaker, add 5 mL of ethanol, and stir magnetically for 20 minutes to obtain a urea solution. Add the potassium sulfate aqueous solution to the urea solution, and ultrasonically treat it for 30 minutes to form a mixed solution;

[0030] Put 0.124mg of graphene oxide in a beaker, add 10mL of deionized water, stir magnetically for 20min, then add the mixed solution prepared above, and put it on a magnetic stirrer and stir continuously for 20min to obtain an intermediate solution;

[0031] Transfer the intermediate solution to a high-pressure stainless steel reactor lined with polytetrafluoroethylene, and put it in a vacuum oven at 190°C for 15 hours;

[0032] After the reaction, put the autoclave into ice water to quench quickly, wash the cooled reaction solution with deioni...

Embodiment 2

[0035] Take 0.182gK 2 SnO 3 ·3H 2 Put O into a beaker, add 30 mL of deionized water, and stir magnetically for 20 minutes to obtain an aqueous solution of potassium sulfate; put 0.24 g of urea into another beaker, add 10 mL of ethanol, and stir magnetically for 20 minutes to obtain a urea solution. Add the potassium sulfate aqueous solution to the urea solution, and ultrasonically treat it for 30 minutes to form a mixed solution;

[0036] Put 0.124mg of graphene oxide in a beaker, add 10mL of deionized water, stir magnetically for 20min, then add the mixed solution prepared above, and put it on a magnetic stirrer and stir continuously for 20min to obtain an intermediate solution;

[0037] Transfer the intermediate solution to a high-pressure stainless steel reactor lined with polytetrafluoroethylene, and put it in a vacuum oven at 190°C for 15 hours;

[0038] After the reaction, put the autoclave into ice water to quench quickly, wash the cooled reaction solution with deion...

Embodiment 3

[0041] Take 0.182gK 2 SnO 3·3H 2 Put O into a beaker, add 25 mL of deionized water, and stir magnetically for 20 minutes to obtain an aqueous solution of potassium sulfate; put 0.24 g of urea into another beaker, add 15 mL of ethanol, and stir magnetically for 20 minutes to obtain a urea solution. Add the potassium sulfate aqueous solution to the urea solution, and ultrasonically treat it for 30 minutes to form a mixed solution;

[0042] Put 0.124mg of graphene oxide in a beaker, add 10mL of deionized water, stir magnetically for 20min, then add the mixed solution prepared above, and put it on a magnetic stirrer and stir continuously for 20min to obtain an intermediate solution;

[0043] Transfer the intermediate solution to a high-pressure stainless steel reactor lined with polytetrafluoroethylene, and put it in a vacuum oven at 190°C for 15 hours;

[0044] After the reaction, put the autoclave into ice water to quench quickly, wash the cooled reaction solution with deioni...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of semiconductor materials, and particularly relates to a preparation method of a graphene and tin oxide hollow sphere composite nanomaterial, wherein themethod comprises the steps: adding deionized water into K2SnO3.3H2O, mixing urea with an ethanol solution, combining a potassium sulfate aqueous solution and a urea solution, and carrying out ultrasonic treatment to form a mixed solution; dispersing graphene oxide into water, adding the mixed solution, uniformly stirring, transferring into a high-pressure stainless steel reaction kettle taking polytetrafluoroethylene as a lining, putting the reaction kettle into a vacuum drying oven, and carrying out reaction; and after the reaction is finished, rapidly putting the high-pressure reaction kettle into ice water to quench, washing the cooled liquid with deionized water and absolute ethyl alcohol respectively, and performing vacuum drying to obtain the G/SnO2 hollow sphere composite nanomaterial. The third-order nonlinear absorption of the G/SnO2 hollow sphere composite nanomaterial synthesized by the method is saturated absorption, the third-order nonlinear refraction is self-focusing, and the G/SnO2 hollow sphere composite nanomaterial is expected to be applied to a mode-locked pulse laser, an optical memory, an optical modulator and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a preparation method of graphene and tin oxide hollow sphere composite nanomaterials. Background technique [0002] SnO 2 It is an n-type wide bandgap (3.6eV) semiconductor material, widely used in solar cells, sensors, nonlinear optoelectronic devices and other fields. Nanoscale SnO 2 The low density, high specific surface area, and good permeability of hollow spheres have greatly improved their electrochemical activity, nonlinear optical properties, etc., and have attracted widespread attention. [0003] Although SnO 2 The nonlinear optical properties of hollow spheres are greater than those of bulk tin oxide, but they cannot meet the needs of nonlinear optics. Therefore, with the emergence of graphene and its excellent optoelectronic properties, scientists began to combine graphene with SnO 2 compound to enhance the nonlinear optical properties ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01G19/02C01B32/184B82Y40/00B82Y30/00
CPCC01G19/02C01B32/184B82Y40/00B82Y30/00C01P2004/80C01P2004/34C01P2004/03
Inventor 朱宝华王芳芳吴嘉文顾玉宗
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap