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Dodecylbenzene sulfonic acid doped PANI/MXene composite wave absorbing material and preparation method thereof

A technology of dodecylbenzene sulfonic acid and composite wave absorbing material, which is applied in chemical instruments and methods, other chemical processes, etc., can solve the problems of limiting the application range of wave absorbing materials, heavy metal compound quality, thick matching thickness, etc. Achieve the effect of thin matching thickness, stable product quality and mild process conditions

Inactive Publication Date: 2020-11-06
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the composite absorbing materials prepared by metal compounds and MXene in the prior art have deficiencies.
Due to defects such as heavy weight, large thickness, and poor stability of metal compounds, the composite absorbing materials of metal compounds and MXene have shortcomings such as large mass, thick matching thickness, and easy corrosion. These shortcomings limit the application range of absorbing materials.

Method used

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  • Dodecylbenzene sulfonic acid doped PANI/MXene composite wave absorbing material and preparation method thereof
  • Dodecylbenzene sulfonic acid doped PANI/MXene composite wave absorbing material and preparation method thereof
  • Dodecylbenzene sulfonic acid doped PANI/MXene composite wave absorbing material and preparation method thereof

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preparation example Construction

[0042] Specifically, regarding the preparation method of the composite wave-absorbing material, the steps are as follows:

[0043] (1) Preparation of few-layer Ti 3 C 2 T x MXene suspension, is Suspension A; Ti 3 C 2 T x The concentration of MXene is 10-15mg / ml;

[0044](2) Add aniline monomer and dodecylbenzenesulfonic acid into deionized water, the molar ratio of aniline monomer and dodecylbenzenesulfonic acid is (1:1.5-1:2), to obtain the mixed solution B;

[0045] (3) Add ammonium persulfate to deionized water, the mass concentration of ammonium persulfate is 0.1-0.15g / ml to obtain solution C;

[0046] (4) Add the suspension A to the mixture B, and add it according to the mass ratio of MXene to aniline monomer at 1:1-3:1;

[0047] After stirring evenly, add solution C again, wherein, according to the molar ratio of aniline monomer and ammonium persulfate is 1:1-1:1.2; obtain mixed solution D;

[0048] (5) Stir the mixture D at room temperature for 6-8 hours;

[...

Embodiment 1

[0055] Example 1: prepare a 10mg / ml few-layer MXene aqueous solution for later use, add 30ml of deionized water and 2.9g of dodecylbenzenesulfonic acid to 490μl of aniline monomer, and stir the acidified aniline monomer solution at 0°C 3h, weigh 1.22g of ammonium persulfate (1:1 molar ratio to aniline monomer) and dissolve it in 10ml of deionized water for later use. After the acidification of aniline monomer is completed, measure 50ml of the above MXene aqueous solution and add it to the aniline monomer solution Stir evenly (the mass ratio of MXene to aniline monomer is 1:1), then add ammonium sulfate solution dropwise, stir the mixed solution at room temperature for 6h, centrifuge wash after the reaction is completed, and freeze-dry to obtain dodecylbenzene Sulfonic acid doped PANI / MXene composite absorbing material.

[0056] Dodecylbenzenesulfonic acid-doped PANI / MXene composite absorbing material electromagnetic parameter test sample preparation steps are as follows: dodec...

Embodiment 2

[0060] Example 2: Prepare a 10mg / ml few-layer MXene aqueous solution for later use, add 30ml of deionized water and 1.45g of dodecylbenzenesulfonic acid to 245μl of aniline monomer, and stir the acidified aniline monomer solution at 0°C 3h, weigh 0.61g of ammonium persulfate (1:1 molar ratio to aniline monomer) and dissolve it in 10ml of deionized water for later use. After the acidification of aniline monomer is completed, measure 50ml of the above MXene aqueous solution and add it to the aniline monomer solution Stir evenly (the mass ratio of MXene to aniline monomer is 2:1), then add ammonium sulfate solution dropwise, stir the mixed solution at room temperature for 6h, perform centrifugal washing after the reaction is completed, and freeze-dry to obtain dodecylbenzene Sulfonic acid doped PANI / MXene composite absorbing material.

[0061] Dodecylbenzenesulfonic acid-doped PANI / MXene composite absorbing material electromagnetic parameter test sample preparation steps are as f...

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Abstract

The invention belongs to the field of electromagnetic wave absorbing materials, and particularly relates to a dodecylbenzene sulfonic acid doped PANI / MXene composite wave absorbing material and a preparation method thereof. The composite wave absorbing material is prepared by doping a polyaniline / MXene nano composite material with dodecylbenzene sulfonic acid. The method has the advantages of mildprocess conditions, low production cost, simple process and stable product quality, and is beneficial to industrial production.

Description

technical field [0001] The invention belongs to the field of electromagnetic wave absorbing materials, and in particular relates to a dodecylbenzenesulfonic acid-doped PANI / MXene composite wave absorbing material and a preparation method thereof. Background technique [0002] With the maturity of electronic information technology, information transmission devices based on electromagnetic waves have spread all over the corners of human life, such as mobile phones, computers, set-top boxes, routers and other equipment have brought great convenience to people's life and work, but inevitably Electromagnetic wave pollution also follows. Serious electromagnetic radiation will endanger human health and have adverse effects on human tissues and organs. In addition, in the military field, with the rapid development of radar detection technology, the improvement of radar stealth technology has also attracted much attention. The coating of absorbing materials is one of the effective wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L79/02C08K3/14C08K5/42C08G73/02C09K3/00
CPCC08K3/14C08K5/42C08G73/0266C09K3/00C08L79/02
Inventor 朱曜峰史伊媛李盛泽董余兵傅雅琴
Owner ZHEJIANG SCI-TECH UNIV
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