Stepping type high-precision photoetching machine

A high-precision, lithography technology, applied in the field of lithography, can solve the problems of temperature change, image etching prone to errors, etching accuracy prone to errors, etc., to achieve the effect of ensuring accuracy

Active Publication Date: 2020-11-10
福建安芯半导体科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing lithography machines are prone to temperature changes of the objective lens, reticle, and mask table under the laser beam, which easily causes errors in the etching of the image. At the same time, each working module of the lithography machine is prone to frequency conversion. Therefore, it is urgent to develop a step-by-step high-precision lithography machine capable of fast frequency conversion and precise etching.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stepping type high-precision photoetching machine
  • Stepping type high-precision photoetching machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In this technical solution:

[0025] see figure 1 , figure 2 , the present invention provides a step-by-step high-precision photolithography machine, including a workbench, a laser, a beam straightener, an energy controller, an energy detector, a beam shape control, a shutter, a reticle, a mask table, an objective lens, Wafers, Enclosed Frames, Vibration Absorbers, Temperature Controls, Regulators, and Consoles; Stages, Energy Controllers, Beam Shape Control, Shutters, Energy Detectors, Energy Controllers, Reticles, Mask Stages, Objectives , silicon chip, temperature control device, and adjuster are set inside the closed frame; lasers, beam correctors, energy controllers, and consoles are set outside the closed frame; the bottom of the closed frame is equipped with a shock absorber; energy controller, beam shape control , light shield, energy detector, and energy controller are located on the same horizontal line, and are arranged in sequence from left to right; the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of photoetching machines, and particularly relates to a stepping type high-precision photoetching machine which comprises a workbench, a laser device, a light beam corrector, an energy controller, an energy detector, a light beam shape controller and the like. The laser, the light beam corrector, the energy controller and the console are arranged outside the closed frame; a shock absorber is arranged at the bottom of the closed frame; and the energy controller, the light beam shape controller, the light shielding device, the energy detector and theenergy controller are located on a same horizontal line and are sequentially arranged from left to right. According to the invention, the temperature difference among an objective lens, a mask plate and a mask table is adjusted in time through a temperature control device; frequency conversion is carried out on the signal in the closed frame through a tuner; the objective lens is locked or loosened through a regulator, so that the objective lens can be adjusted, the objective lens is prevented from expanding or contracting under the irradiation of laser beams, etched patterns can be accurate,and the effects of rapid frequency conversion and accurate etching can be achieved.

Description

technical field [0001] The invention belongs to the technical field of lithography machines, in particular to a step-by-step high-precision lithography machine. Background technique [0002] With the continuous improvement of integrated circuit manufacturing technology and the continuous shrinking of line width in lithography technology, the area of ​​semiconductor devices is becoming smaller and smaller. The layout of semiconductors has evolved from ordinary single-function separation devices to integrated high-density multi-functional Integrated circuit; from the initial IC (integrated circuit) to LSI (large-scale integrated circuit), VLSI (very large-scale integrated circuit), until today's ULSI (ultra-large-scale integrated circuit), the area of ​​the device is further reduced, and the function is more comprehensive powerful. [0003] Considering the constraints of unfavorable factors such as the complexity, long-term and high cost of process research and development, h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70241G03F7/70875G03F7/70733G03F7/70858
Inventor 李俊毅姚恒裕陈舜钦
Owner 福建安芯半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products