Regeneration cleaning method for quartz part of semiconductor high-order process APC device

A semiconductor, high-end technology, applied in the field of cleaning, can solve the problems of corrosion of quartz body, long time, etc.

Active Publication Date: 2020-11-17
上海富乐德智能科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Removal of SiON/Si from the surface of quartz components using HF x N y , th

Method used

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  • Regeneration cleaning method for quartz part of semiconductor high-order process APC device
  • Regeneration cleaning method for quartz part of semiconductor high-order process APC device
  • Regeneration cleaning method for quartz part of semiconductor high-order process APC device

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Experimental program
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Embodiment Construction

[0036] The present invention will be further described below in conjunction with the accompanying drawings.

[0037] see Figure 1 to Figure 5 , the regeneration method of semiconductor APC equipment quartz part (gas distribution plate) in this embodiment, comprises the steps:

[0038] Step 1, micropowder blasting;

[0039] Use the gas protection jig for sand blasting, and perform WA400# micro-powder sand blasting on the quartz parts to remove the residue or deposits on the surface. The delivery gas pressure used is 0.5-1Kg.cm 2 , sandblasting time 3-5 minutes;

[0040] Step 2, physical grinding and polishing;

[0041] Use a rotating platform and a certain sieved silicon carbide abrasive to grind a specific area. Through multiple grindings of a variety of sieved silicon carbide abrasives (coarse first and then fine), the surface roughness of the quartz part is lower than 1.0um, and the turntable Speed ​​30-75rmp;

[0042] Step three, flame polishing;

[0043] Oxygen-hydr...

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Abstract

The invention relates to the technical field of semiconductors. The invention discloses a regeneration cleaning method for a quartz part of a semiconductor high-order process APC device. The regeneration cleaning method comprises the following steps: step 1, micro-powder sand blasting; step 2, physical polishing and grinding; step 3, flame polishing; step 4, high-temperature annealing; step 5, chemical cleaning: firstly, soaking in an ammonia water hydrogen peroxide solution at the temperature of 20-40 DEG C for 10 minutes, then soaking in a nitro-fluoro acid solution for 5-20 minutes, and finally, soaking in a nitro-fluoro acid solution for 5-20 min; step 6, ultrasonic cleaning; and step 7, washing and drying. According to the method, the cost is reduced, and the purpose of avoiding the corrosion problem of chemical film removal is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a cleaning method. Background technique [0002] In the manufacturing process of semiconductor devices, as the requirements of semiconductor manufacturing process become higher and higher, the requirements for parasitic current are higher and higher, among which the requirements for copper purity of copper wiring are higher and higher. Pre-cleaning equipment) device is beneficial to improve the purity of copper, and is widely used. [0003] In the process of purifying copper by introducing hydrogen into the APC device, due to the low vacuum degree, while the hydrogen is purifying the copper on the surface of the silicon wafer, the oxygen in the silicon dioxide of the quartz component substrate in the device will be taken away, and the following occurs: Chemical reaction: SiO 2 +N 2 +H 2 →SiON+Si x N y +H 2 O, making the surface of the quartz part rough, in view of t...

Claims

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Application Information

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IPC IPC(8): B08B3/08B08B3/12B08B3/02B24C1/08B24B29/02F26B21/00
CPCB08B3/08B08B3/12B08B3/02B24C1/08B24B29/02F26B21/003F26B21/004
Inventor 廖宗洁贺贤汉杨炜
Owner 上海富乐德智能科技发展有限公司
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