Low-dielectric intrinsic negative photosensitive polyimide material and preparation method thereof
A photosensitive polyimide, intrinsic type technology, applied in photosensitive materials, optomechanical equipment, optics and other directions for optomechanical equipment, can solve problems such as unfavorable use of polyimide, achieve uniform and controllable thickness, Ease of use, simple preparation method
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[0021] The invention provides a method for preparing a low-dielectric intrinsic type negative photosensitive polyimide material, comprising the following steps: mixing the first diamine monomer, the second diamine monomer and the dibasic anhydride monomer Dissolved in an organic solvent, wherein the dibasic anhydride monomer is added in batches; after a certain period of time, the polyamic acid solution is obtained; the polyamic acid solution is spin-coated to obtain a polyamic acid film; The amination treatment obtains a low-dielectric intrinsic type negative photosensitive polyimide material.
[0022] The embodiment of the present invention introduces a diacetylene group as a photosensitive light source, on the one hand to achieve the purpose of self-sensitization, on the other hand, the prepared photosensitive polyimide material has considerable mechanical properties and thermal properties. In addition, introducing a large amount of fluorine into the photosensitive polyimid...
Embodiment 1
[0037] 5 mmol 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl (TFMB), 5 mmol 1,4-bis(4-aminobenzene)butadiyne (p-BDDA) and 10 mmol hexafluorodianhydride (6FDA) were successively dissolved in 40 mL N,N-dimethylacetamide solvent (hexafluorodianhydride was added in batches), and reacted under nitrogen atmosphere at room temperature to obtain photosensitive polyamic acid ( PSPAA) solution; the PSPAA solution was spin-coated to obtain a PSPAA film, and then subjected to gradient imidization at 100°C, 200°C, 300°C, 350°C, and 400°C to obtain a low-dielectric intrinsic negative photosensitive polyamide imine material.
[0038] The average thickness of the photosensitive polyimide material obtained above is 10 µm, the dielectric constant is 2.73 @1MHz, and the water absorption rate is 0.62%. The i-line exposure sensitivity of this PSPAA solution is 260 mJ / cm2, and the i-line exposure and development It can form a negative photolithographic pattern with a resolution of 10µm, and has co...
Embodiment 2
[0040]Mix 2.5 mmol 2,2-bis(4-aminophenyl)hexafluoropropane (4,4'-6FDAm), 7.5 mmol 1,4-bis(3-aminophenyl)butadiyne (m-BDDA) and 10 Mmol 1,3-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (PFPDA) was successively dissolved in 40 mL of N,N-dimethylformamide solvent (dianhydride was added in batches), under argon The photosensitive polyamic acid (PSPAA) solution was obtained by stirring and reacting under air atmosphere and room temperature; the PSPAA solution was spin-coated to obtain a PSPAA film, and then subjected to gradient imidization at 100°C, 200°C, 300°C, 350°C, and 400°C , to obtain low dielectric intrinsic type negative photosensitive polyimide material.
[0041] The average thickness of the photosensitive polyimide material obtained above is 10 µm, the dielectric constant is 3.05 @1MHz, and the water absorption rate is 0.75%. The i-line exposure sensitivity of this PSPAA solution is 215 mJ / cm2, and the i-line exposure and development Negative tone photolithogr...
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