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Capillary aluminum tube for high-speed flow of gallium-based liquid metal containing oxide layer and preparation method thereof

A liquid metal, high-speed flow technology, applied in the field of microelectronics, can solve problems such as failure of aluminum-based heat sink components, catastrophic accidents, and difficulty in normal flow of liquid metal, so as to prevent embrittlement reactions and broaden the scope of application.

Active Publication Date: 2022-08-09
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the gallium-based liquid metal will spontaneously form a continuous oxide film (1-3nm) immediately in an oxygen-containing environment, and the oxide layer will firmly adhere to the solid surface, making it difficult for the liquid metal to flow normally
Not only that, the embrittlement effect caused by the intergranular reaction between gallium-based liquid metal and aluminum and aluminum-based alloy materials will lead to the failure of aluminum-based heat dissipation devices. This embrittlement effect will cause catastrophic accidents in engineering practice

Method used

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  • Capillary aluminum tube for high-speed flow of gallium-based liquid metal containing oxide layer and preparation method thereof
  • Capillary aluminum tube for high-speed flow of gallium-based liquid metal containing oxide layer and preparation method thereof
  • Capillary aluminum tube for high-speed flow of gallium-based liquid metal containing oxide layer and preparation method thereof

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preparation example Construction

[0055] A preparation method of a capillary aluminum tube capable of high-speed flow of gallium-based liquid metal containing an oxide layer, comprising the following steps:

[0056] (1) Pretreatment of capillary aluminum tube

[0057] After filling the capillary aluminum tube with acetone, seal it, ultrasonically clean it for 5-10min, and the ultrasonic frequency is 40-60kHz; after pouring out the acetone, inject alcohol, seal it, and ultrasonically clean it for 5-20min, and the ultrasonic frequency is 40-60kHz; after pouring out the alcohol Inject deionized water, seal, ultrasonically clean for 5-15min, and the ultrasonic frequency is 40-60kHz.

[0058] The above-mentioned cleaned capillary aluminum tube is placed in an oven at 60-150° C. for drying treatment, the drying time is 20-120 min, and it is sealed for future use.

[0059] (2) Electrochemical machining of the inner wall of the capillary aluminum tube

[0060] The inner wall of the capillary aluminum tube is electro...

Embodiment 1

[0084] (1) Pretreatment of capillary aluminum tube

[0085] After the capillary aluminum tube with an inner diameter of 200 μm was filled with acetone, sealed, ultrasonically cleaned for 6 minutes, and the ultrasonic frequency was 40 kHz; after pouring out the acetone, poured alcohol, sealed, and ultrasonically cleaned for 6 minutes, and the ultrasonic frequency was 40 kHz; poured out the alcohol and injected deionized water. , sealed, ultrasonic cleaning 8min, ultrasonic frequency is 40kHz. The above-mentioned cleaned capillary aluminum tube was placed in an oven at 60° C. for drying treatment, and the drying time was 30 min. Save for backup.

[0086] The surface microstructure and element analysis of the inner wall of the capillary aluminum tube after surface cleaning are as follows: image 3 As shown, the XRD pattern is as Figure 4 The corresponding obtained element amounts are shown in Table 1. from image 3 It can be seen from the microstructure of the inner wall of...

Embodiment 2

[0109] (1) Pretreatment of capillary aluminum tube

[0110] A capillary aluminum tube with an inner diameter of 500 μm was used, and the pretreatment parameters and process were the same as those in Example 1.

[0111] (2) Electrochemical machining of the inner wall of the capillary aluminum tube

[0112] The electrochemical machining device is the same as that of Example 1.

[0113] The concentration of the electrolyte solution selected during electrochemical machining is 0.25mol / L NaCl solution, and the current density is 250mA / cm 2 , the reaction temperature was 25 °C, and the reaction time was 15 min. After the reaction, anhydrous ethanol was injected into the capillary aluminum tube, sealed, and ultrasonically cleaned for 5 minutes. 8min, the ultrasonic frequency is 40kHz. Finally, the capillary aluminum tube was dried in a 60°C oven for 25 min.

[0114] (3) Anodizing processing of the inner wall of the capillary aluminum tube

[0115] The electrolyte solution is a m...

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Abstract

A capillary aluminum tube capable of high-speed flow of a gallium-based liquid metal containing an oxide layer and a preparation method thereof. The preparation method comprises the following steps: (1) pretreatment of the capillary aluminum tube; (2) electrochemical machining of the inner wall of the capillary aluminum tube (3) Anodizing processing of the inner wall of the capillary aluminum tube; Steps (2) and (3) jointly complete the preparation of the surface microstructure of the capillary aluminum tube, so that the inner wall surface of the capillary aluminum tube forms regular square grooves; (4) Surface modification The lipophilic modification of the inner wall of the capillary aluminum tube is completed, and (5) the surface pre-dipping solution is filled to complete the preparation of the super-smooth capillary aluminum tube. The invention realizes the application of gallium and gallium-based liquid metal in the aluminum-based capillary tube. Due to the existence of the surface oxide layer and the pre-injection liquid layer, the driving power consumption when the liquid metal is driven is effectively reduced, and the gallium-based liquid metal and the capillary are isolated. The direct contact of the aluminum tube prevents the occurrence of embrittlement reaction.

Description

technical field [0001] The present invention generally relates to the technical field of microelectronics, and in particular relates to a microchannel heat dissipation device. Background technique [0002] With the vigorous development of the electronic information industry, integrated circuits have developed to the stage of huge scale integration. In integrated circuits, with the continuous reduction of feature size and the continuous improvement of performance, the heat generation per unit area also increases sharply. If this heat is not dissipated in a timely manner, electronic equipment will be exposed to a high thermal burden and the danger of damaging the device. In order to ensure the normal operation of electronic equipment, the timely transport of heat from large-scale integrated circuits, and the improvement of the heat exchange efficiency of small and micro-sized heat exchangers are imminent. In fact, not only integrated chips in electronic equipment, but also u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/473H05K7/20C25D11/04C25D11/16
CPCH01L23/367H01L23/3736H01L23/473H05K7/20336C25D11/04C25D11/16
Inventor 赵存陆闫慧龙张文耀崔永赫钱芳王秋旺
Owner XI AN JIAOTONG UNIV
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