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Method for preparing high-purity nano indium oxide powder

A technology of nano-indium oxide and indium oxide, which is applied in chemical instruments and methods, nanotechnology, nanotechnology, etc., can solve problems such as difficulty in guaranteeing the purity of indium oxide powder, difficulty in achieving nanoscale reactions, and complex process control, etc., to achieve beneficial The effect of environmental protection, uniform particle size, and simple temperature control

Inactive Publication Date: 2020-12-11
中山智隆新材料科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is more common, but there are many steps, and the process of high temperature calcination is required, and the process control is more complicated.
In addition, more waste liquid is produced, which pollutes the environment, and the sediment needs to be washed several times, which wastes water.
The solid-phase method is divided into high-temperature solid-phase reaction method, room temperature solid-phase reaction method, etc. The disadvantage of the solid-phase method is that the purity of the generated indium oxide powder is difficult to guarantee, and the reaction is difficult to reach the nanometer scale, and the particles of the generated powder are relatively large

Method used

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  • Method for preparing high-purity nano indium oxide powder
  • Method for preparing high-purity nano indium oxide powder

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Embodiment Construction

[0022] The present invention is described in further detail below in conjunction with embodiment.

[0023] Such as figure 1 , 2 As shown, a kind of method for preparing high-purity nano-indium oxide powder provided by the present invention, at first a reaction box 5 is provided, the reaction box 5 is equipped with a door 6 with an observation window 8, and the reaction box 5 is provided with a useful In the crucible 9 containing indium powder, a high-frequency induction coil 10 for heating the crucible 9 is provided below the crucible 9. 2 The gas cylinder 1 is connected to the reaction box 5 through a pipeline provided with a ball valve switch 2, a vacuum pump 14 is connected to the reaction box 5 through a pipeline provided with a ball valve switch 13, and the reaction box 5 is also provided with a vacuum gauge 4 .

[0024] Specific preparation steps: ball mill the indium powder of the reaction raw material for 1 to 2 hours, and pass through a mesh of 60, 100, 150, and 20...

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Abstract

The invention discloses a method for preparing high-purity nano indium oxide powder, which comprises a reaction box body for providing a purification reaction place, a bin gate is arranged on the reaction box body, a crucible for containing indium powder is arranged in the reaction box body, and a high-frequency induction coil for heating the crucible is arranged below the crucible. The O2 gas cylinder is connected with the reaction box body through a pipeline provided with a ball valve switch, the vacuum pump is connected with the reaction box body through a pipeline provided with a ball valve switch, and the reaction box body is further provided with a vacuum degree meter. By adopting the scheme, a special high-temperature reaction chamber and an atomizer do not need to be specially arranged. Compared with a precipitation method, the method does not generate waste liquid, does not need a washing and centrifuging process, does not need a high-temperature calcining link, and is beneficial to environmental protection and saving of water resources and energy. Compared with a solid-phase method, the indium vapor is oxidized with oxygen at high temperature, and the nano indium oxide powder with high purity, uniform particle size and high sintering activity can be prepared.

Description

technical field [0001] The invention belongs to the field of ITO target preparation, in particular to a method for preparing high-purity nano indium oxide powder by sublimation. Background technique [0002] Most of the transparent electrodes used in flat panel display devices are ITO thin films, which require few defects, uniform quality, high flatness and good conductivity. This kind of ITO thin film is prepared by magnetron sputtering method of ITO target. Therefore, to obtain high-quality ITO thin film, the ITO target used should have high density, high purity, few defects and small grain size. uniform. The ITO target is made of indium oxide and tin oxide powders with a mass ratio of 9:1 through mixing, granulation, molding, and sintering. Indium oxide powder accounts for the majority of the raw materials. Therefore, it is very important to prepare indium oxide powder with high purity, uniform particle size and high sintering activity for the preparation of high-end IT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00B82Y40/00B82Y30/00
CPCC01G15/00B82Y40/00B82Y30/00C01P2004/03C01P2006/80C01P2004/64
Inventor 崔恒丁金铎葛春桥柳春锡金志洸王梦涵
Owner 中山智隆新材料科技有限公司
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