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A method of improving hole mobility of p-type field effect transistor

A field-effect transistor and hole mobility technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low carrier mobility and inability to match the mobility of n-channel transistors, etc. Achieve the effect of simple operation, improved hole mobility, and low cost

Active Publication Date: 2021-10-15
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the current situation and deficiency that the carrier mobility of the p-channel transistor components in the current integrated circuit is relatively low and cannot be matched with the mobility of the n-channel transistor, the present invention provides a method for improving the hole mobility of the p-type field effect transistor. method, using the metal-semiconductor heterojunction to reduce the carrier concentration in the channel semiconductor, thereby improving the carrier mobility of components

Method used

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  • A method of improving hole mobility of p-type field effect transistor
  • A method of improving hole mobility of p-type field effect transistor
  • A method of improving hole mobility of p-type field effect transistor

Examples

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Embodiment 1

[0030] Si / SiO that will prepare field effect transistors 2 The substrate was pretreated, ultrasonically cleaned with deionized water, acetone, and ethanol, and dried. GaSb nanowires were dispersed into absolute ethanol by low-power ultrasound and transferred to Si / SiO by droplet coating method 2 substrate, forming dispersed individual nanowires.

[0031] The electrode position of the device is defined by ultraviolet lithography technology, and the source and drain electrode patterns are formed through the processes of spinning glue, baking glue, exposure, and development, and the electrode spacing is 2-5 microns. Electron beam evaporation or thermal evaporation is used to vapor-deposit 50nm metallic nickel as the source and drain electrodes, and the evaporation rate is 0.2nm / s. The stripping is carried out by using a glue remover to form the structure of a p-type field effect transistor.

[0032] Use a microscope to locate the device with a single GaSb nanowire between the ...

Embodiment 2

[0036] 0.5 nanometer aluminum particles were deposited on the surface of the GaSb nanowire field effect transistor by thermal evaporation, and other steps were the same as in Example 1.

Embodiment 3

[0038] 1 nanometer aluminum particles were deposited on the surface of the GaSb nanowire field effect transistor by thermal evaporation, and other steps were the same as in Example 1.

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Abstract

The invention relates to a method for improving the hole mobility of a p-type field effect transistor, which helps to improve the low carrier mobility of p-channel transistor components in integrated circuits and cannot match the mobility of n-channel transistors status quo. The invention utilizes the metal-semiconductor heterojunction to reduce the carrier concentration in the channel semiconductor, thereby improving the carrier mobility of components. The invention deposits CMOS compatible low work function aluminum, tin or titanium metal particles on the surface of the GaSb nanowire field effect transistor. When the aluminum particles are deposited, the peak hole mobility of the device is increased to 3372 cm 2 · v ‑1 ·s ‑1 , which is three times that of undeposited, reaching the maximum hole mobility of p-channel transistors in room temperature and atmospheric environment. The process has strong controllability, simple operation and low cost.

Description

technical field [0001] The invention relates to a method for improving the hole mobility of a p-type field effect transistor, belonging to the field of semiconductor nanometer materials and devices. Background technique [0002] In modern integrated circuits, since the carrier mobility of p-channel transistors is often lower than that of n-channel transistors, the development of further miniaturization of chips is restricted. Therefore, it is essential to study the method of improving the hole mobility of p-type field effect transistors. important. The carrier mobility of the above-mentioned components mainly depends on the manufacturing technology of the device and the channel semiconductor material. In terms of device manufacturing technology, using a cleaner substrate can increase the electron mobility of graphene field-effect transistors by four times (Do-Hyun Park, et al.2019, The evolution of surface cleanness and electronic properties of graphene field-effect transi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/10B82Y40/00
CPCB82Y40/00H01L29/0673H01L29/068H01L29/1033H01L29/66462H01L29/66469H01L29/66522
Inventor 杨再兴孙嘉敏
Owner SHANDONG UNIV