Unlock instant, AI-driven research and patent intelligence for your innovation.

Application of anionic conjugated polyelectrolyte material with sulfonate radicals in perovskite solar cell

A conjugated polyelectrolyte, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of photoelectric conversion efficiency and stability decline of devices, poor coverage of tin dioxide film, etc.

Active Publication Date: 2020-12-11
NANJING UNIV OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SnO 2 High electron mobility, and can be prepared at lower temperature, however, due to SnO 2 The conduction band position in the film is relatively deep, around -4.5eV, while the conduction band of perovskite is -3.9eV, which cannot form a good interface contact and electron transfer; and the simple solution spin-coated tin dioxide film The coverage is relatively poor, which leads to problems such as a decrease in the photoelectric conversion efficiency and stability of the device, so it is usually necessary to use SnO 2 interface modification

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Application of anionic conjugated polyelectrolyte material with sulfonate radicals in perovskite solar cell
  • Application of anionic conjugated polyelectrolyte material with sulfonate radicals in perovskite solar cell
  • Application of anionic conjugated polyelectrolyte material with sulfonate radicals in perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0015] Synthesis of interface materials:

[0016] 1. The preparation method of anionic conjugated polyelectrolyte SPF, general reaction formula is as follows:

[0017]

[0018] (1) Synthesis of 2,7-dibromo-9H-fluorene

[0019]

[0020] Take a 100ml two-necked round bottom flask, add fluorene (2.5g, 15mmol), dissolve it in 30ml chloroform solution, then add anhydrous FeCl 3 Powder (13mg, 2.3mmol) and finally liquid bromine (5g, 31.5mmol) was added to the reaction flask. The reaction bottle was placed in a refrigeration reaction tank, cooled, and the temperature was controlled at about 0°C. After the reaction was stirred for 2 hours, the crude product was filtered and recrystallized with chloroform to obtain the product as white crystals (4.38g, yield 90%) .

[0021] 1 H NMR (500MHz, CDCl 3 )δ7.67(s, 2H), 7.60(d, J=8.1Hz, 2H), 7.51(d, J=8.1Hz, 2H), 3.89(d, J=14.3Hz, 2H).

[0022] (2) Synthesis of 2,7-dibromo-9,9-bis(4'-sulfobutyl)fluorene disodium

[0023]

[002...

Embodiment example 2

[0031] Preparation and Characterization of Perovskite Solar Cells:

[0032] (1) Wash the etched 1.5cm x 1.5cm ITO substrate with lotion, clean the organic matter on the surface, rinse it with water, ultrasonicate twice with deionized water, each time for 20 minutes, and then use acetone, Sonicate isopropanol for 20 minutes respectively, dry the ITO substrate with a nitrogen gun, and place it in UV-O 3 Moderate irradiation for 30 minutes.

[0033] (2) Standard device ITO / SnO 2 Preparation of / perovskite / Spiro-OMeTAD / Au:

[0034] SnO 2 The solution was spin-coated onto the treated ITO substrate and annealed at 150°C for 30 minutes; then the perovskite solution was spin-coated onto the ITO / SnO 2 On the substrate, anneal at 100°C for about 10 minutes; then spin-coat the prepared Spiro-OMeTAD solution on the perovskite; finally turn it into a vacuum evaporation chamber. The Au electrode is vapor-deposited, and the device is prepared.

[0035] (3) Device ITO / SnO with anionic c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to the patent, anion conjugated polyelectrolyte with sulfonate radicals is mainly used as an interface material for modifying electron transport SnO2 in a perovskite solar cell with an upright structure; the interface layer is small in roughness and regular in surface appearance, has good hydrophobicity and interface characteristics, improves the quality of a perovskite layer film, improves the stability of a device, and achieves the high-efficiency and stable perovskite solar cell. The potential and wide application prospect of the material in the field of perovskite solar cells isshown. Wherein y is 1 to 7; and z is 1 to 10.

Description

technical field [0001] The invention relates to the technical field of perovskite solar cells, specifically an anion conjugated polyelectrolyte material with sulfonate ions, and also relates to a method for preparing a perovskite solar cell containing the interface material. Background technique [0002] Since the perovskite solar cell was proposed in 2009, in just ten years, the photoelectric conversion efficiency has been greatly improved, and its photoelectric conversion efficiency has increased from 3.8% to more than 24%. Perovskite solar cells not only have high efficiency, but also have a very simple preparation process, and can prepare large-area, ultra-thin flexible devices, which has become one of the research hotspots of new solar cells. However, the current photoelectric conversion efficiency and stability still need to be further improved and enhanced. One of the reasons for poor stability is that there are often defects in the device, which can lead to carrier ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/00H10K99/00
CPCH10K71/12H10K85/111H10K85/151H10K30/15Y02E10/549
Inventor 高德青谭超郇义红
Owner NANJING UNIV OF TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com